Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation. [PDF]
Micromachines (Basel), 2022 In this work, the impact of nitrogen doping (N-doping) on the distribution of sub-gap states in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is qualitatively analyzed by technology computer-aided design (TCAD) simulation.
Zhu Z +5 more
europepmc +2 more sources
Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation. [PDF]
Micromachines (Basel), 2022 A novel VDMOS with Step Floating Islands VDMOS (S-FLI VDMOS) is proposed for the first time in this letter, in order to optimize the breakdown voltage (BV) and the specific on-resistance (Ron,sp).
Zhao D +11 more
europepmc +2 more sources
Study on ESD Protection Circuit by TCAD Simulation and TLP Experiment [PDF]
Micromachines, 2023 The anti-ESD characteristic of the electronic system is paid more and more attention. Moreover, the on-chip electrostatic discharge (ESD) is necessary for integrated circuits to prevent ESD failures.
Fuxing Li +5 more
doaj +2 more sources
TCAD Simulation Studies on Ultra-Low-Power Non-Volatile Memory [PDF]
Micromachines, 2023 Ultra-Low-Power Non-Volatile Memory (UltraRAM), as a promising storage device, has attracted wide research attention from the scientific community. Non-volatile data retention in combination with switching at ≤2.6 V is achieved through the use of the ...
Ziming Xu +5 more
doaj +2 more sources
Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework. [PDF]
Micromachines (Basel), 2021 The modeling of nano-electronic devices is a cost-effective approach for optimizing the semiconductor device performance and for guiding the fabrication technology.
Medina-Bailon C +6 more
europepmc +2 more sources
TCAD Simulation of Novel Semiconductor Devices [PDF]
2021 IEEE 14th International Conference on ASIC (ASICON), 2021 Simulation of conventional and emerging electronic devices using Technology Computer Aided Design (TCAD) tools has been an essential part of the semiconductor industry as well as academic research. Computational efficiency and accuracy of the numerical modeling are the key criteria on which quality and usefulness of a TCAD tool are ascertained. Further,
Dutta, Tapas +9 more
openaire +2 more sources
TCAD Simulation of Single Event Transient in Si Bulk MOSFET at Cryogenic Temperature
IEEE Access, 2022 In this paper, the functional relationship between temperature and single event transient currents caused by heavy-ion striking using TCAD simulation is investigated from 77K to 300 K on 65nm Si bulk n MOSFET. TCAD simulation shows that temperature has a
Tongshan Lu, Chenghua Wang
doaj +2 more sources
TCAD Simulation of Two Photon Absorption—Transient Current Technique Measurements on Silicon Detectors and LGADs [PDF]
SensorsDevice simulation plays a crucial role in complementing experimental device characterisation by enabling deeper understanding of internal physical processes.
Sebastian Pape +3 more
doaj +2 more sources
Total Ionizing Dose Effect Simulation Study on 130 nm CMOS Processor [PDF]
MicromachinesThis paper reports the results of a system-level total ionizing dose (TID) effect simulation study on a SMIC 130 nm LEON2 processor. Firstly, the device-level simulations of the 130 nm NMOS transistors are performed using the Sentaurus TCAD software to ...
Yi Liu +5 more
doaj +2 more sources
Vertical GaN Diode BV Maximization through Rapid TCAD Simulation and ML-enabled Surrogate Model [PDF]
Solid-State Electronics, 2022 In this paper, two methodologies are used to speed up the maximization of the breakdown voltage (BV) of a vertical GaN diode that has a theoretical maximum BV of ~2100V.
A. Lu +5 more
semanticscholar +1 more source