Results 1 to 10 of about 11,389 (196)
Study on ESD Protection Circuit by TCAD Simulation and TLP Experiment [PDF]
The anti-ESD characteristic of the electronic system is paid more and more attention. Moreover, the on-chip electrostatic discharge (ESD) is necessary for integrated circuits to prevent ESD failures.
Fuxing Li +5 more
doaj +2 more sources
TCAD Simulation Studies on Ultra-Low-Power Non-Volatile Memory [PDF]
Ultra-Low-Power Non-Volatile Memory (UltraRAM), as a promising storage device, has attracted wide research attention from the scientific community. Non-volatile data retention in combination with switching at ≤2.6 V is achieved through the use of the ...
Ziming Xu +5 more
doaj +2 more sources
TCAD Simulation of Two Photon Absorption—Transient Current Technique Measurements on Silicon Detectors and LGADs [PDF]
Device simulation plays a crucial role in complementing experimental device characterisation by enabling deeper understanding of internal physical processes.
Sebastian Pape +3 more
doaj +2 more sources
Total Ionizing Dose Effect Simulation Study on 130 nm CMOS Processor [PDF]
This paper reports the results of a system-level total ionizing dose (TID) effect simulation study on a SMIC 130 nm LEON2 processor. Firstly, the device-level simulations of the 130 nm NMOS transistors are performed using the Sentaurus TCAD software to ...
Yi Liu +5 more
doaj +2 more sources
TCAD Simulation of Novel Semiconductor Devices [PDF]
Simulation of conventional and emerging electronic devices using Technology Computer Aided Design (TCAD) tools has been an essential part of the semiconductor industry as well as academic research. Computational efficiency and accuracy of the numerical modeling are the key criteria on which quality and usefulness of a TCAD tool are ascertained. Further,
Dutta, Tapas +9 more
openaire +1 more source
ESD Design Verification Aided by Mixed-Mode Multiple-Stimuli ESD Simulation
Electrostatic discharge (ESD) protection is a grand design challenge for complex ICs in advanced technologies. ESD simulation is indispensable to guide ESD protection designs.
Mengfu Di +3 more
doaj +1 more source
In this study, the device characteristics of silicon nanowire feedback field-effect transistors were predicted using technology computer-aided design (TCAD)-augmented machine learning (TCAD-ML).
Sola Woo, Juhee Jeon, Sangsig Kim
doaj +1 more source
Narrowband Near-Infrared Perovskite/Organic Photodetector: TCAD Numerical Simulation
Narrowband photodetectors (PD) established in the near-infrared (NIR) wavelength range are highly required in a variety of applications including high-quality bioimaging.
Marwa S. Salem +6 more
doaj +1 more source
3D TCAD Analysis Enabling ESD Layout Design Optimization
On-chip electrostatic discharge (ESD) protection design for integrated circuits (ICs) is a challenging design-for-reliability problem. Since ESD events involve very high current transients in very short time period, current crowding is unavoidable, which
Zijin Pan +4 more
doaj +1 more source
Low Gain Avalanche Detectors (LGADs) are thin silicon detectors with moderate internal signal amplification and time resolution as good as 17 ps for minimum ionizing particles. However, the current major limiting factor in granularity is due to protection structures preventing breakdown caused by high electric fields at the edge of the segmented ...
Nizam, M. +6 more
openaire +2 more sources

