Results 21 to 30 of about 11,742 (216)
TCAD Simulation of Single Event Transient in Si Bulk MOSFET at Cryogenic Temperature
IEEE Access, 2022 In this paper, the functional relationship between temperature and single event transient currents caused by heavy-ion striking using TCAD simulation is investigated from 77K to 300 K on 65nm Si bulk n MOSFET. TCAD simulation shows that temperature has a
Tongshan Lu, Chenghua Wang
doaj +1 more source
IEEE Access, 2020 A machine learning (ML) model by combing two autoencoders and one linear regression model is proposed to avoid overfitting and to improve the accuracy of Technology Computer-Aided Design (TCAD)-augmented ML for semiconductor structural variation ...
Kashyap Mehta +5 more
doaj +1 more source
Prediction of Single Event Effects in FinFET Devices Based on Deep Learning
IEEE Journal of the Electron Devices Society, 2023 The Single Event Effect (SEE) of FinFET devices has become one of the challenging issues affecting the reliability of modern electronic systems in space and terrestrial applications.
Haiyu Liu +7 more
doaj +1 more source
Characterization of electrical crosstalk in 4T-APS arrays using TCAD simulations [PDF]
, 2017 TCAD simulations have been conducted on a CMOS image sensor in order to characterize the electrical component of the crosstalk between pixels through the study of the electric field distribution. The image sensor consists on a linear array of five pinned
Carmona Galán, Ricardo +2 more
core +1 more source
Sensors, 2022 The theoretical basis of a hypothetical spherical electrode detector was investigated in our previous work. It was found that the proposed detector has very good electrical characteristics, such as greatly reduced full depletion voltage, small ...
Manwen Liu +4 more
doaj +1 more source
Modeling and simulation of bulk gallium nitride power semiconductor devices
AIP Advances, 2016 Bulk gallium nitride (GaN) power semiconductor devices are gaining significant interest in recent years, creating the need for technology computer aided design (TCAD) simulation to accurately model and optimize these devices.
G. Sabui +3 more
doaj +1 more source
Double-gate MOSFET Model Implemented in Verilog-AMS Language for the Transient Simulation and the Configuration of Ultra Low-power Analog Circuits [PDF]
International Journal of Electronics and Telecommunications, 2021 This paper deals with the implementation of a DC and AC double-gate MOSFET compact model in the Verilog- AMS language for the transient simulation and the configuration of ultra low-power analog circuits. The Verilog-AMS description of the proposed model
Billel Smaani +5 more
doaj +1 more source
Analysis of total dose-induced dark current in CMOS image sensors from interface state and trapped charge density measurements [PDF]
, 2010 The origin of total ionizing dose induced dark current in CMOS image sensors is investigated by comparing dark current measurements to interface state density and trapped charge density measurements.
Girard, Sylvain +4 more
core +4 more sources
AIP Advances, 2021 The electron trapping in AlGaN/GaN high-electron mobility transistors (HEMTs) with iron (Fe)-doped buffer is investigated through Drain Current Transient (DCT) measurements and TCAD physics-based 2D device simulations.
Mohamed Bouslama +4 more
doaj +1 more source
TCAD Device Simulations of Irradiated Silicon Detectors [PDF]
Proceedings of The 28th International Workshop on Vertex Detectors — PoS(Vertex2019), 2020 The high hadron fluences expected during the HL-LHC programme will damage the silicon detectors. New TCAD simulation models are needed to understand the expected detector behaviour. This review examines the challenges ahead for different kind of detector devices, with attention to the acceptor removal effect in LGADs, surface damage for Monolithics and
Francisco Rogelio Palomo Pinto +5 more
openaire +1 more source