Results 21 to 30 of about 2,850,351 (204)

Large-signal device simulation in time- and frequency-domain: a comparison [PDF]

, 2008
The aim of this paper is to compare the most common time- and frequency-domain numerical techniques for the determination of the steady-state solution in the physics-based simulation of a semiconductor device driven by a time-periodic generator.
Bonani, Fabrizio, Francesco Bertazzi, Giovanni Ghione, Ghione, Giovanni, Donati Guerrieri, Simona, Simona Donati Guerrieri, Bertazzi, Francesco, Fabrizio Bonani   +7 more
core   +1 more source

Nano-Electronic Simulation Software (NESS): A Novel Open-Source TCAD Simulation Environment

Journal of Microelectronic Manufacturing, 2020
This paper presents the latest status of the open source advanced TCAD simulator called Nano-Electronic Simulation Software (NESS) which is currently under development at the Device Modeling Group of the University of Glasgow.
Cristina Medina-Bailon, Tapas Dutta, Fikru Adamu-Lema, Ali Rezaei, Daniel Nagy, Vihar P. Georgiev, Asen Asenov   +6 more
doaj   +1 more source

Simulations of the breakdown characteristics of n-on-p backside-illumination Silicon Photomultipliers by TCAD

Results in Physics, 2018
This paper investigates, using Synopsys Sentaurus TCAD simulation, the dependence of the breakdown voltage of n-on-p backside-illumination Silicon Photomultipliers (BSI-SiPM) on the implantation dose, the implantation energy and the screening SiO2 ...
Ran He, Guangqing Yan, Jian Liu, Wenxuan Cheng, Rongdan Liu, Kun Liang, Ru Yang, Dejun Han   +7 more
doaj   +1 more source

Restructuring TCAD System: Teaching Traditional TCAD New Tricks

, 2021
Traditional TCAD simulation has succeeded in predicting and optimizing the device performance; however, it still faces a massive challenge - a high computational cost.
Myung, Sanghoon, Jeong, Changwook, Choe, Jae Myung, Jin, Seonghoon, Kim, Dae Sin, Jang, Wonik   +5 more
core   +1 more source

Powernet: SOI Lateral Power Device Breakdown Prediction With Deep Neural Networks

IEEE Access, 2020
The breakdown performance is a critical metric for power device design. This paper explores the feasibility of efficiently predicting the breakdown performance of silicon on insulator (SOI) lateral power device using multi-layer neural networks as an ...
Jing Chen, Mohamed Baker Alawieh, Yibo Lin, Maolin Zhang, Jun Zhang, Yufeng Guo, David Z. Pan   +6 more
doaj   +1 more source

A Two-Dimensional Computer-Aided Design Study of Unclamped Inductive Switching in an Improved 4H-SiC VDMOSFET

Micromachines, 2023
Due to its high thermal conductivity, high critical breakdown electric field, and high power, the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) has been generally used in industry.
Xinfeng Nie, Ying Wang, Chenghao Yu, Xinxing Fei, Jianqun Yang, Xingji Li   +5 more
doaj   +1 more source

TCAD-Machine Learning Framework for Device Variation and Operating Temperature Analysis With Experimental Demonstration

IEEE Journal of the Electron Devices Society, 2020
This work, for the first time, experimentally demonstrates a TCAD-Machine Learning (TCAD-ML) framework to assist the analysis of device-to-device variation and operating (ambient) temperature without the need of physical quantities extraction.
Hiu Yung Wong, Ming Xiao, Boyan Wang, Yan Ka Chiu, Xiaodong Yan, Jiahui Ma, Kohei Sasaki, Han Wang, Yuhao Zhang   +8 more
doaj   +1 more source

Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]

, 2008
Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio, Furno, M., Ghione, Giovanni, FURNO M   +3 more
core   +1 more source

Process variation-aware test for resistive bridges [PDF]

, 2009
This paper analyses the behaviour of resistive bridging faults under process variation and shows that process variation has a detrimental impact on test quality in the form of test escapes.
Ingelsson, Urban, Reddy, Sudhakar M., Harrod, Peter, Khursheed, Saqib, Al-Hashimi, Bashir M., Al-Hashimi, Bashir M, Reddy, Sudhakar M   +6 more
core   +1 more source

Improvement of TCAD Augmented Machine Learning Using Autoencoder for Semiconductor Variation Identification and Inverse Design

IEEE Access, 2020
A machine learning (ML) model by combing two autoencoders and one linear regression model is proposed to avoid overfitting and to improve the accuracy of Technology Computer-Aided Design (TCAD)-augmented ML for semiconductor structural variation ...
Kashyap Mehta, Sophia Susan Raju, Ming Xiao, Boyan Wang, Yuhao Zhang, Hiu Yung Wong   +5 more
doaj   +1 more source