Results 21 to 30 of about 5,000 (223)
Results in Physics, 2018 This paper investigates, using Synopsys Sentaurus TCAD simulation, the dependence of the breakdown voltage of n-on-p backside-illumination Silicon Photomultipliers (BSI-SiPM) on the implantation dose, the implantation energy and the screening SiO2 ...
Ran He +7 more
doaj +1 more source
Powernet: SOI Lateral Power Device Breakdown Prediction With Deep Neural Networks
IEEE Access, 2020 The breakdown performance is a critical metric for power device design. This paper explores the feasibility of efficiently predicting the breakdown performance of silicon on insulator (SOI) lateral power device using multi-layer neural networks as an ...
Jing Chen +6 more
doaj +1 more source
Optical TCAD on the Net: A tight-binding study of inter-band light transitions in self-assembled InAs/GaAs quantum dot photodetectors [PDF]
, 2013 A new capability of our well-known NEMO 3-D simulator (Ref. Klimeck et al., 2007 [10]) is introduced by carefully investigating the utility of III–V semiconductor quantum dots as infrared photodetectors at a wavelength of 1.2–1.5 μm.
Ahn, Bu-Young +8 more
core +2 more sources
TCAD simulation of microwave circuits: The Doherty amplifier [PDF]
, 2022 Power amplifiers (PAs) for next generation of communication systems are expected to operate at higher frequency and bandwidth to support the growing data rates.
Donati Guerrieri, S. +2 more
core +1 more source
IEEE Journal of the Electron Devices Society, 2020 This work, for the first time, experimentally demonstrates a TCAD-Machine Learning (TCAD-ML) framework to assist the analysis of device-to-device variation and operating (ambient) temperature without the need of physical quantities extraction.
Hiu Yung Wong +8 more
doaj +1 more source
TCAD Simulation of Single Event Transient in Si Bulk MOSFET at Cryogenic Temperature
IEEE Access, 2022 In this paper, the functional relationship between temperature and single event transient currents caused by heavy-ion striking using TCAD simulation is investigated from 77K to 300 K on 65nm Si bulk n MOSFET. TCAD simulation shows that temperature has a
Tongshan Lu, Chenghua Wang
doaj +1 more source
Ferroelectric behavior and NCFETs - TCAD Simulation
Asian Journal of Electrical and Electronic Engineering, 2021 With the miniaturization of transistors, the current leakage also increases due to the increasing tunnelling effect. Plus, Boltzmann’s tyranny limits the subthreshold swing to be best and ideal at 60 mV/decade. Due to these, the power consumption in transistors keeps soaring up. Therefore, in this paper, the Negative Capacitance Effect Field Transistor
Naimah Darmis +2 more
openaire +1 more source
Process variation-aware test for resistive bridges [PDF]
, 2009 This paper analyses the behaviour of resistive bridging faults under process variation and shows that process variation has a detrimental impact on test quality in the form of test escapes.
Ingelsson, Urban +9 more
core +1 more source
IEEE Access, 2020 A machine learning (ML) model by combing two autoencoders and one linear regression model is proposed to avoid overfitting and to improve the accuracy of Technology Computer-Aided Design (TCAD)-augmented ML for semiconductor structural variation ...
Kashyap Mehta +5 more
doaj +1 more source
Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]
, 2008 Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio +3 more
core +1 more source