Results 31 to 40 of about 5,000 (223)
Prediction of Single Event Effects in FinFET Devices Based on Deep Learning
IEEE Journal of the Electron Devices Society, 2023 The Single Event Effect (SEE) of FinFET devices has become one of the challenging issues affecting the reliability of modern electronic systems in space and terrestrial applications.
Haiyu Liu +7 more
doaj +1 more source
Sensors, 2022 The theoretical basis of a hypothetical spherical electrode detector was investigated in our previous work. It was found that the proposed detector has very good electrical characteristics, such as greatly reduced full depletion voltage, small ...
Manwen Liu +4 more
doaj +1 more source
Optimization of Si MOS transistors for THz detection using TCAD simulation [PDF]
, 2014 We present a TCAD simulation study for Silicon MOSFET terahertz detectors. The impact of transistor doping profile optimization on detector performance is analyzed.
Nihar R. Mohapatra +5 more
core +1 more source
Modeling and simulation of bulk gallium nitride power semiconductor devices
AIP Advances, 2016 Bulk gallium nitride (GaN) power semiconductor devices are gaining significant interest in recent years, creating the need for technology computer aided design (TCAD) simulation to accurately model and optimize these devices.
G. Sabui +3 more
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AIP Advances, 2021 The electron trapping in AlGaN/GaN high-electron mobility transistors (HEMTs) with iron (Fe)-doped buffer is investigated through Drain Current Transient (DCT) measurements and TCAD physics-based 2D device simulations.
Mohamed Bouslama +4 more
doaj +1 more source
Double-gate MOSFET Model Implemented in Verilog-AMS Language for the Transient Simulation and the Configuration of Ultra Low-power Analog Circuits [PDF]
International Journal of Electronics and Telecommunications, 2021 This paper deals with the implementation of a DC and AC double-gate MOSFET compact model in the Verilog- AMS language for the transient simulation and the configuration of ultra low-power analog circuits. The Verilog-AMS description of the proposed model
Billel Smaani +5 more
doaj +1 more source
Numerical simulation and compact modeling of low voltage pentacene based OTFTs
Journal of Science: Advanced Materials and Devices, 2019 As organic thin film transistors (OTFTs) are poised to play a key role in flexible and low-cost electronic applications, there is a need of device modeling to support technology optimization and circuit design.
A.D.D. Dwivedi +3 more
doaj +1 more source
Identification of power PIN diode design parameters: Circuit and device-based simulation approach
Ain Shams Engineering Journal, 2021 This paper aims to present a detailed systematic approach to identify the main design parameters of PIN power diodes. Firstly, the diode physical parameters are initialized using simple analytical equations.
A. Shaker +5 more
doaj +1 more source
Off-State Performance Characterization of an AlGaN/GaN Device via Artificial Neural Networks
Micromachines, 2022 Due to the complexity of the 2D coupling effects in AlGaN/GaN HEMTs, the characterization of a device’s off-state performance remains the main obstacle to exploring the device’s breakdown characteristics. To predict the off-state performance of AlGaN/GaN
Jing Chen +7 more
doaj +1 more source
TCAD methodology for simulation of GaN-HEMT power devices [PDF]
, 2014 Gallium nitride (GaN) based High Electron Mobility Transistors (HEMTs) are candidates for the next generation of power electronic devices and are therefore subject of intense research activities worldwide.
Steve Stoffels +11 more
core +1 more source