Results 31 to 40 of about 11,742 (216)
Numerical simulation and compact modeling of low voltage pentacene based OTFTs
Journal of Science: Advanced Materials and Devices, 2019 As organic thin film transistors (OTFTs) are poised to play a key role in flexible and low-cost electronic applications, there is a need of device modeling to support technology optimization and circuit design.
A.D.D. Dwivedi +3 more
doaj +1 more source
Identification of power PIN diode design parameters: Circuit and device-based simulation approach
Ain Shams Engineering Journal, 2021 This paper aims to present a detailed systematic approach to identify the main design parameters of PIN power diodes. Firstly, the diode physical parameters are initialized using simple analytical equations.
A. Shaker +5 more
doaj +1 more source
Off-State Performance Characterization of an AlGaN/GaN Device via Artificial Neural Networks
Micromachines, 2022 Due to the complexity of the 2D coupling effects in AlGaN/GaN HEMTs, the characterization of a device’s off-state performance remains the main obstacle to exploring the device’s breakdown characteristics. To predict the off-state performance of AlGaN/GaN
Jing Chen +7 more
doaj +1 more source
Simulation Based DC and Dynamic Behaviour Characterization of Z2FET [PDF]
, 2017 This work presents a TCAD investigation of the operation of a Z2FET device for memory application, where the TCAD model is well calibrated to experimental hysteresis curves.
Adamu-Lema, Fikru +8 more
core +1 more source
Atoms-to-Circuits Simulation Investigation of CNT Interconnects for Next Generation CMOS Technology [PDF]
, 2017 In this study, we suggest a hierarchical model to investigate the electrical performance of carbon nanotube (CNT)- based interconnects. From the density functional theory, we have obtained important physical parameters, which are used in TCAD ...
Amoroso, Salvatore M. +11 more
core +3 more sources
Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]
, 2008 Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio +2 more
core +1 more source
Electrical TCAD Simulation of STT-MRAMs
2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)In this paper, we propose to develop a full TCAD simulation, using a commercial tool (Sentaurus), of an STT-MRAM device to better understand its electrical behavior. To our knowledge, it is the first time that a simulated I-V hysteresis loop is calibrated on experimental data.
Saifi, Hanane +8 more
openaire +2 more sources
, 2014 The LHC accelerator complex will be upgraded between 2020-2022, to the High-Luminosity-LHC, to considerably increase statistics for the various physics analyses.
Dinu, N. +3 more
core +3 more sources
Quality in Simulation-Only Manuscripts Submitted to J-EDS
IEEE Journal of the Electron Devices Society, 2021 In recent years the Journal of the Electron Device Society (J-EDS) has experienced an increasing number of submissions of “simulation only” manuscripts.
Enrico Sangiorgi
doaj +1 more source
Optimizing floating guard ring designs for FASPAX N-in-P silicon sensors
, 2016 FASPAX (Fermi-Argonne Semiconducting Pixel Array X-ray detector) is being developed as a fast integrating area detector with wide dynamic range for time resolved applications at the upgraded Advanced Photon Source (APS.) A burst mode detector with ...
Bradford, Robert +6 more
core +1 more source