Results 31 to 40 of about 2,850,351 (204)
TCAD Simulation of Single Event Transient in Si Bulk MOSFET at Cryogenic Temperature
IEEE Access, 2022 In this paper, the functional relationship between temperature and single event transient currents caused by heavy-ion striking using TCAD simulation is investigated from 77K to 300 K on 65nm Si bulk n MOSFET. TCAD simulation shows that temperature has a
Tongshan Lu, Chenghua Wang
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Prediction of Single Event Effects in FinFET Devices Based on Deep Learning
IEEE Journal of the Electron Devices Society, 2023 The Single Event Effect (SEE) of FinFET devices has become one of the challenging issues affecting the reliability of modern electronic systems in space and terrestrial applications.
Haiyu Liu +7 more
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TCAD challenges and some Fraunhofer solutions
, 2022 S.1-4In order to meet its industrial target to reduce the development time and costs for new semiconductor technologies, devices and circuits, TCAD must meet various challenges which are outlined in the ITRS.
Lorenz, J.
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Modeling and simulation of bulk gallium nitride power semiconductor devices
AIP Advances, 2016 Bulk gallium nitride (GaN) power semiconductor devices are gaining significant interest in recent years, creating the need for technology computer aided design (TCAD) simulation to accurately model and optimize these devices.
G. Sabui +3 more
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Sensors, 2022 The theoretical basis of a hypothetical spherical electrode detector was investigated in our previous work. It was found that the proposed detector has very good electrical characteristics, such as greatly reduced full depletion voltage, small ...
Manwen Liu +4 more
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Ferroelectric behavior and NCFETs - TCAD Simulation
Asian Journal of Electrical and Electronic Engineering, 2021 With the miniaturization of transistors, the current leakage also increases due to the increasing tunnelling effect. Plus, Boltzmann’s tyranny limits the subthreshold swing to be best and ideal at 60 mV/decade. Due to these, the power consumption in transistors keeps soaring up. Therefore, in this paper, the Negative Capacitance Effect Field Transistor
Naimah Darmis +2 more
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Variation aware analysis of bridging fault testing [PDF]
, 2008 This paper investigates the impact of process variation on test quality with regard to resistive bridging faults. The input logic threshold voltage and gate drive strength parameters are analyzed regarding their process variation induced influence on ...
Ingelsson, Urban +2 more
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Identification of power PIN diode design parameters: Circuit and device-based simulation approach
Ain Shams Engineering Journal, 2021 This paper aims to present a detailed systematic approach to identify the main design parameters of PIN power diodes. Firstly, the diode physical parameters are initialized using simple analytical equations.
A. Shaker +5 more
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Numerical simulation and compact modeling of low voltage pentacene based OTFTs
Journal of Science: Advanced Materials and Devices, 2019 As organic thin film transistors (OTFTs) are poised to play a key role in flexible and low-cost electronic applications, there is a need of device modeling to support technology optimization and circuit design.
A.D.D. Dwivedi +3 more
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AIP Advances, 2021 The electron trapping in AlGaN/GaN high-electron mobility transistors (HEMTs) with iron (Fe)-doped buffer is investigated through Drain Current Transient (DCT) measurements and TCAD physics-based 2D device simulations.
Mohamed Bouslama +4 more
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