Results 51 to 60 of about 2,850,351 (204)
Materials OpenThis paper investigates a comparative analysis of technology computer-aided design (TCAD) versus machine learning (ML) technique for ferroelectric-based substrate metal oxide semiconductor field effect transistor (FE-MOSFET), which shows the low power ...
Abhay Pratap Singh +2 more
doaj +1 more source
Quality in Simulation-Only Manuscripts Submitted to J-EDS
IEEE Journal of the Electron Devices Society, 2021 In recent years the Journal of the Electron Device Society (J-EDS) has experienced an increasing number of submissions of “simulation only” manuscripts.
Enrico Sangiorgi
doaj +1 more source
Advanced Electronic Materials, EarlyView.ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez +10 more
wiley +1 more source
TCAD simulations of radiation damage in 4H-SiC
Microelectronic Engineering4 pages, 4 ...
Burin, Jürgen +5 more
openaire +2 more sources
Numerical simulation of ISFET structures for biosensing devices with TCAD tools [PDF]
BioMedical Engineering OnLine, 2015 Ion Sensitive Field Effect Transistors (ISFETs) are one of the primitive structures for the fabrication of biosensors (BioFETs). Aiming at the optimization of the design and fabrication processes of BioFETs, the correlation between technological parameters and device electrical response can be obtained by means of an electrical device-level simulation.
PASSERI, Daniele +3 more
openaire +4 more sources
Optimization of Si MOS transistors for THz detection using TCAD simulation
, 2014 We present a TCAD simulation study for Silicon MOSFET terahertz detectors. The impact of transistor doping profile optimization on detector performance is analyzed.
Nihar R. Mohapatra +5 more
core +1 more source
Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory
Advanced Electronic Materials, EarlyView.For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley +1 more source
Advanced Electronic Materials, EarlyView.Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink +6 more
wiley +1 more source
Balancing Carrier Cooling in InN/GaN Quantum Wells via Point Defect Engineering
Advanced Electronic Materials, EarlyView.Nitrogen vacancies in the InN/GaN interface regulate carrier relaxation in polar quantum wells by reconstructing the conduction‐band decay pathway and enhancing nonadiabatic coupling. No deep midgap state is introduced in the neutral single‐vacancy model, enabling faster hot‐electron cooling, improved electron‐hole balance, reduced electron overflow ...
Yuxin Yang +5 more
wiley +1 more source
Advanced Intelligent Discovery, EarlyView.This article outlines how artificial intelligence could reshape the design of next‐generation transistors as traditional scaling reaches its limits. It discusses emerging roles of machine learning across materials selection, device modeling, and fabrication processes, and highlights hierarchical reinforcement learning as a promising framework for ...
Shoubhanik Nath +4 more
wiley +1 more source