Results 51 to 60 of about 11,742 (216)

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

Structural Influence on Radiation-induced Single-event Effects in SiC MOSFETs: Comparative Analysis of Planar and Trench Designs

Yuanzineng kexue jishu
The single-event susceptibility of three silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power devices structures (planar, trench and double trench) is researched by the technology computer-aided design (TCAD) simulation.
HU Libin1, 2, FENG Shaohui3, SUI Chenglong3, WANG Chengjie3, CHEN Miao3, LU Peng1, YANG Can1, SHU Lei1, , LU Jiang4, LI Bo1, 2
doaj   +1 more source

Simulations of CMOS pixel sensors with a small collection electrode, improved for a faster charge collection and increased radiation tolerance

, 2019
CMOS pixel sensors with a small collection electrode combine the advantages of a small sensor capacitance with the advantages of a fully monolithic design.
Benoit, Mathieu, Dannheim, Dominik, Fenigstein, Amos, Kugathasan, Thanushan, Leitner, Tomer, Munker, Magdalena, Pernegger, Heinz, Riedler, Petra, Snoeys, Walter   +8 more
core   +1 more source

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

Advanced Electronic Materials, EarlyView.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source

Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs [PDF]

, 2017
The characteristic performance of n-type and p-type inversion (IM) mode, accumulation (AC) mode and junctionless (JL) mode, bulk Germanium FinFET device with 3-nm gate length (LG) are demonstrated by using 3-D quantum transport device simulation.
Asenov, Asen, Georgiev, Vihar P., Jhan, Yi-Ruei, Kurniawan, Erry Dwi, Lee, Jaehyun, Lema, Fikru-Adamu, Lin, Yu-Ru, Sadi, Toufik, Soundarapandian, Karuppasamy Pandian, Thirunavukkarasu, Vasanthan, Wu, Yung-Chun, Yang, Shang-Yi   +11 more
core   +1 more source

Exploiting Temperature Effects for Robust Control and Reference Circuits Using Thin‐Film Contact‐Controlled Transistors

Advanced Electronic Materials, EarlyView.
Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink, Jean‐Charles Fustec, Olivier de Sagazan, Rogier Fransen, George Bairaktatis, Emmanuel Jacques, Radu A. Sporea   +6 more
wiley   +1 more source

Radiation Hardness Studies in a CCD with High-Speed Column Parallel Readout

, 2007
Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived particles.
, A Sopczak, A Sopczak for the LCFI collaboration, C Bowdery, C Buttar, C Damerell, Ch-K Kim, D Djendaoui, D Maneuski, G Davies, J R Janesick, K Bekhouche, K Stefanov, K Stefanov, L Dehimi, M Koziel, M S Robbins, O Ursache, S Aoulmit, S Worm, T Greenshaw, T Tikkanen, T Woolliscroft   +22 more
core   +1 more source

AI‐Guided Co‐Optimization of Advanced Field‐Effect Transistors: Bridging Material, Device, and Fabrication Design

Advanced Intelligent Discovery, EarlyView.
This article outlines how artificial intelligence could reshape the design of next‐generation transistors as traditional scaling reaches its limits. It discusses emerging roles of machine learning across materials selection, device modeling, and fabrication processes, and highlights hierarchical reinforcement learning as a promising framework for ...
Shoubhanik Nath, Shauryaraj K. Jilkar, Aditya Udgaonkar, Yu (Joe) Lu, Ali Mesbah   +4 more
wiley   +1 more source

Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability [PDF]

, 2014
In this paper we illustrate how by using advanced atomistic TCAD tools the interplay between long-range process variation and short-range statistical variability in FinFETs can be accurately modelled and simulated for the purposes of Design-Technology Co-
Asenov, A., Brown, A.R., Cheng, B., Millar, C., Wang, X.   +4 more
core   +1 more source

Computationally Driven Advances in Cu‐CNT On‐Chip Interconnect Materials: From First Principles to Machine Learning

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
A multiscale framework integrating electronic, mechanical, and thermal analysis with machine learning to optimize carbon nanotube interconnects. As the component dimensions in integrated circuits shrink to extreme scales, the complexity of interconnect systems is increasing significantly, necessitating an urgent and comprehensive upgrade of ...
Changhong Zhang, Jie Liang, Yi Li, Zhenyu Wang, Haoyuan Li, Zhen Yuan, Jiuren Zhou, Rongmei Chen, Wensheng Zhao, Lei Zhang, Hanshen Xin, Jianhua Zhang   +11 more
wiley   +1 more source