Results 61 to 70 of about 11,742 (216)

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer

Nanoscale Research Letters, 2022
In this work, a vertical gallium nitride (GaN)-based trench MOSFET on 4-inch free-standing GaN substrate is presented with threshold voltage of 3.15 V, specific on-resistance of 1.93 mΩ·cm2, breakdown voltage of 1306 V, and figure of merit of 0.88 GW/cm2.
Wei He, Jian Li, Zeliang Liao, Feng Lin, Junye Wu, Bing Wang, Maojun Wang, Nan Liu, Hsien-Chin Chiu, Hao-Chung Kuo, Xinnan Lin, Jingbo Li, Xinke Liu   +12 more
doaj   +1 more source

An Improved Model of Single-Event Transients Based on Effective Space Charge for Metal–Oxide–Semiconductor Field-Effect Transistor

Micromachines, 2023
In this paper, a single-event transient model based on the effective space charge for MOSFETs is proposed. The physical process of deposited and moving charges is analyzed in detail.
Yutao Zhang, Hongliang Lu, Chen Liu, Yuming Zhang, Ruxue Yao, Xingming Liu   +5 more
doaj   +1 more source

Subthreshold Swing Control in IGZO TFTs Using Floating‐Gate Engineering for AMOLED Displays

Journal of the Society for Information Display, EarlyView.
This study demonstrates a novel IGZO floating‐gate thin‐film transistor (FG‐TFT) enabling precise subthreshold swing (SS) modulation via layout‐defined gate coupling ratio engineering. A source‐overlapped floating‐gate structure achieves wide, linear SS tuning without increasing device footprint, enhancing low‐gray uniformity in high‐resolution AMOLED ...
Sunyeol Bae, Junhyeong Park, Hyung‐Jun Noh, Jaybum Kim, Yumin Yun, Chae‐Hwan Park, Soo‐Yeon Lee   +6 more
wiley   +1 more source

Characterization of Thin p-on-p Radiation Detectors with Active Edges

, 2016
Active edge p-on-p silicon pixel detectors with thickness of 100 $\mu$m were fabricated on 150 mm Float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and charge collection
Granja, C., Gädda, A., Härkönen, J., Jakubek, J., Jakubek, M., Kalliopuska, J., Peltola, T., Wu, X.   +7 more
core   +1 more source

Electron Multiplying Low-Voltage CCD With Increased Gain [PDF]

, 2018
Novel designs for the gain elements in electron multiplying (EM) CCDs have been implemented in a device manufactured in a low voltage CMOS process.
Dunford, Alice, Holland, Andrew D., Stefanov, Konstantin D.   +2 more
core   +1 more source

Simulation Insights Into Enhanced Emitter Contact Passivation via LECO on Industrial TOPCon Solar Cells

Progress in Photovoltaics: Research and Applications, EarlyView.
Numerical simulations were employed to boost industrial TOPCon cells from 25.5% to 26.07% by suppressing J0e,metal,eff without compromising ρc with a dual optimization strategy: (1) engineering the selective emitter sheet resistance (Rsh_SE) to 117 Ω/□ and (2) reducing the LECO‐induced partial metal contact ratio (fpmc) to 1%.
Jiayu Xu, Yun Qin, Zhiyuan Zhang, Wei Fan, Wu Zhang, Qun Liu, Jiaji Lin, Yuhao Cheng, Ning Song, Bram Hoex, Lang Zhou, Fa‐Jun Ma   +11 more
wiley   +1 more source

Experimental and simulation study of irradiated silicon pad detectors for the CMS High Granularity Calorimeter

, 2017
The foreseen upgrade of the LHC to its high luminosity phase (HL-LHC), will maximize the physics potential of the facility. The upgrade is expected to increase the instantaneous luminosity by a factor of 5 and deliver an integrated luminosity of 3000 fb ...
Peltola, Timo
core   +1 more source

Improving the Comprehensive Modeling Framework for Energy Yield Simulations of Various Novel Photovoltaic Systems

Advanced Theory and Simulations, Volume 9, Issue 5, May 2026.
This work outlines a flexible, modular modelling framework for photovoltaic (PV) systems, consisting of two pre‐processing and six simulation steps. It enables detailed analysis from the cell to the system level. Through multiple case studies, the framework demonstrates its adaptability and effectiveness for a wide range of PV applications and research 
Youri Blom, Malte Ruben Vogt, Olindo Isabella, Rudi Santbergen   +3 more
wiley   +1 more source

Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations [PDF]

, 2019
The cubic polytype (3C-) of Silicon Carbide (SiC) is an emerging semiconductor technology for power devices. The featured isotropic material properties along with the Wide Band Gap (WBG) characteristics make it an excellent choice for power Metal Oxide ...
Antoniou, M, Arvanitopoulos, A, Gyftakis, K N, Jennings, M R, Li, Fan, Lophitis, N, Perkins, S   +6 more
core   +1 more source

Detection of Toxic Gases and Volatile Organic Compounds Using Highly Adsorptive Nanomaterials: A Comprehensive Assessment

EcoMat, Volume 8, Issue 5, May 2026.
This review highlights how nanomaterials with high adsorption capacities including carbon‐based structures, transition metal oxides, 2D layers, and zeolites enable sensitive and selective detection of toxic gases and VOCs. Their tailored properties and sensing mechanisms drive the development of next‐generation gas sensors for environmental and ...
Hamdy A. Ismail, Sabbah Ataya, Mohamed M. Goda, Ahmed G. Hussein, Ahmed Ramah, Ahmad G. Ramadan, Rashid Khan, Joy Djuansjah, Swellam W. Sharshir, Ahmed El‐Harairy   +9 more
wiley   +1 more source