Results 61 to 70 of about 5,000 (223)

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer

Nanoscale Research Letters, 2022
In this work, a vertical gallium nitride (GaN)-based trench MOSFET on 4-inch free-standing GaN substrate is presented with threshold voltage of 3.15 V, specific on-resistance of 1.93 mΩ·cm2, breakdown voltage of 1306 V, and figure of merit of 0.88 GW/cm2.
Wei He, Jian Li, Zeliang Liao, Feng Lin, Junye Wu, Bing Wang, Maojun Wang, Nan Liu, Hsien-Chin Chiu, Hao-Chung Kuo, Xinnan Lin, Jingbo Li, Xinke Liu   +12 more
doaj   +1 more source

Performance Evaluation of MISISFET- TCAD Simulation

International Journal of Computer Applications, 2012
A novel device n-MISISFET with a "dielectric stack" instead of the single insulator of n-MOSFET has been described and its characteristics has been obtained in this paper. The desired variation of threshold voltage is obtained with biasing for the novel n-MISISFET for various substrate doping concentrations, the effect temperature variation on various ...
Rajeevan Chandel, Gargi Khanna, Tarun Chaudhary   +2 more
openaire   +1 more source

Simulation Insights Into Enhanced Emitter Contact Passivation via LECO on Industrial TOPCon Solar Cells

Progress in Photovoltaics: Research and Applications, EarlyView.
Numerical simulations were employed to boost industrial TOPCon cells from 25.5% to 26.07% by suppressing J0e,metal,eff without compromising ρc with a dual optimization strategy: (1) engineering the selective emitter sheet resistance (Rsh_SE) to 117 Ω/□ and (2) reducing the LECO‐induced partial metal contact ratio (fpmc) to 1%.
Jiayu Xu, Yun Qin, Zhiyuan Zhang, Wei Fan, Wu Zhang, Qun Liu, Jiaji Lin, Yuhao Cheng, Ning Song, Bram Hoex, Lang Zhou, Fa‐Jun Ma   +11 more
wiley   +1 more source

TCAD and EM co-simulation method to verify SiGe HBT measurements up to 500 GHz [PDF]

, 2020
International audienceA systematic method for the verification of high frequency measurement (up-to 500 GHz) of silicon germanium heterojunction bipolar transistor (SiGe HBT) is proposed.
Fregonese, Sebastien, DENG, Marina, Panda, Soumya Ranjan, Zimmer, Thomas, Chakravorty, Anjan   +4 more
core   +1 more source

An Improved Model of Single-Event Transients Based on Effective Space Charge for Metal–Oxide–Semiconductor Field-Effect Transistor

Micromachines, 2023
In this paper, a single-event transient model based on the effective space charge for MOSFETs is proposed. The physical process of deposited and moving charges is analyzed in detail.
Yutao Zhang, Hongliang Lu, Chen Liu, Yuming Zhang, Ruxue Yao, Xingming Liu   +5 more
doaj   +1 more source

SiC resistive X‐ray beam monitor for intensity and position control of synchrotron light

Journal of Synchrotron Radiation, EarlyView.
The characterization of a silicon carbide free‐standing membrane resistive detector for spot‐size‐independent X‐ray beam position monitoring in transmission is presented.A silicon carbide (SiC) X‐ray beam position monitor is presented, based on a resistive charge‐division principle derived from lateral‐effect photodiodes and specifically adapted for ...
Gabriele Trovato, Niccolò La Rosa, Francesco La Via, Janin Lubeck, Antonio Manno, Samuele Moscato, Matthias Müller, Massimo Camarda   +7 more
wiley   +1 more source

Modeling and simulation of terahertz detector with tcad software. [PDF]

, 2016
Modeling and Simulation of Terahertz Detector with TCAD ...
Kojelis, Martynas,
core  

Bio‐inspired inorganic/organic semiconductor heterostructure synapses with UV–visible–NIR wavelength‐dependent responses for image recognition

InfoMat, Volume 8, Issue 7, July 2026.
This study presents a SnSe2/DNTT heterostructure photonic synaptic transistor that exhibits wavelength‐dependent photoresponses and synaptic plasticity. Operating with low energy consumption, the device extends spectral sensitivity from ultraviolet (UV) to near‐infrared (NIR) wavelengths, significantly enhancing neuromorphic computing performance. When
Shuying He, Huaiyu Gao, Junyao Zhang, Hongrong Chang, Zhiyu Zhang, Jianda Xu, Jie Yang, Jia Huang   +7 more
wiley   +1 more source

Physical Modeling and Design of a Nonvolatile Optically Gated High‐Power Diamond Transistor

physica status solidi (a), Volume 223, Issue 11, 10 June 2026.
We introduce a diamond optically gated field effect transistor (DOGFET) which combines high‐speed high‐power operation with exotic single transistor memory. The transistor uses deep level donor type nitrogen traps in type 1b diamond that are optically excited to enable electrostatic gating of the device.
Soumak Nandi, Ethan White, Qinghui Shao, Bikramjit Chatterjee, Clint D. Frye, Dylan M. Evans, Mohamadali Malakoutian, Srabanti Chowdhury, Lars Voss, Shaloo Rakheja   +9 more
wiley   +1 more source

3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics [PDF]

, 2012
Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD.
Fu, Yue, Yue Fu, Li, Simon, Simon Li
core   +1 more source