Results 61 to 70 of about 2,850,351 (204)

TCAD methodology for simulation of GaN-HEMT power devices

, 2014
Gallium nitride (GaN) based High Electron Mobility Transistors (HEMTs) are candidates for the next generation of power electronic devices and are therefore subject of intense research activities worldwide.
Steve Stoffels, Tommaso Cilento, Benoit Bakeroot, Axel Erlebach, Erlebach, Axel, Denis Marcon, Cilento, Tommaso, Stephan Strauss, Denis, Marcon, Strauss, Stephan, Bakeroot, Benoit, Stoffels, Steve   +11 more
core   +1 more source

Transport models and advanced numerical simulation of silicon-germanium heterojunction bipolar transistors [PDF]

, 2010
Applications in the emerging high-frequency markets for millimeter wave applications more and more use SiGe components for cost reasons. To support the technology effort, a reliable TCAD platform is required.
Sasso, Grazia
core   +1 more source

Low‐Voltage Operation of IGZO Memtransistors Enabled by Coupling Enhancement Through 2T Drain‐Driven Operation for Neuromorphic Computing

Advanced Intelligent Systems, EarlyView.
A two‐terminal IGZO memtransistor enabling low‐voltage operation is demonstrated through coupling enhancement. By utilizing drain‐induced Fowler–Nordheim tunneling, the device achieves programming below 10 V with a large memory window and high on/off ratio.
Junhyeong Park, Sunyeol Bae, Yumin Yun, Chae‐Hwan Park, Donghyeon Lee, Soo‐Yeon Lee   +5 more
wiley   +1 more source

A Generalizable Framework for Building Executable Domain‐Specific Large Language Models Under Data Scarcity: Demonstration on Semiconductor Technology Computer‐Aided Design Simulation

Advanced Intelligent Systems, EarlyView.
A schema‐first alignment framework builds compact, executable domain‐specific language models under data scarcity. Large‐scale synthetic question‐answer generation instills domain knowledge, and a code‐centric IR‐to‐DPO pipeline aligns generation with tool‐executable syntax.
Di Wang, Zhenhua Wu, Yu Liu, Kai Chang, Shaohua Wu   +4 more
wiley   +1 more source

Modeling and simulation of terahertz detector with tcad software. [PDF]

, 2016
Modeling and Simulation of Terahertz Detector with TCAD ...
Kojelis, Martynas,
core  

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer

Nanoscale Research Letters, 2022
In this work, a vertical gallium nitride (GaN)-based trench MOSFET on 4-inch free-standing GaN substrate is presented with threshold voltage of 3.15 V, specific on-resistance of 1.93 mΩ·cm2, breakdown voltage of 1306 V, and figure of merit of 0.88 GW/cm2.
Wei He, Jian Li, Zeliang Liao, Feng Lin, Junye Wu, Bing Wang, Maojun Wang, Nan Liu, Hsien-Chin Chiu, Hao-Chung Kuo, Xinnan Lin, Jingbo Li, Xinke Liu   +12 more
doaj   +1 more source

Bayesian Optimization–Reinforcement Learning Hybrid Framework for a‐IGZO Thin‐Film Transistor Compact Model Parameter Extraction in 2T0C Dynamic Random Access Memory Applications

Advanced Intelligent Systems, EarlyView.
A training‐free two‐stage BO–RL framework extracts compact model parameters for a‐IGZO TFTs, reaching BO‐level fitting quality at a constant per‐simulation optimization cost. Bayesian optimization performs exploration and provides an optimized starting point.
Seunghyun Son, Taejun Ha, Taeyoung Nam, Yoonyoung Chung, Sunmean Kim   +4 more
wiley   +1 more source

Simulation of silicon carbide JFET with the TCAD tool SILVACO

, 2013
118 σ.Εθνικό Μετσόβιο Πολυτεχνείο--Μεταπτυχιακή Εργασία. Διεπιστημονικό-Διατμηματικό Πρόγραμμα Μεταπτυχιακών Σπουδών (Δ.Π.Μ.Σ.) “Μικροσυστήματα και Νανοδιατάξεις”Σε αυτήν την διπλωματική εργασία εξετάζεται η προσομοίωση με TCAD, η βασική λειτουργία του ...
Stefanakis, Dionysios Z., Στεφανάκης, Διονύσιος Ζ.   +1 more
core   +1 more source

Hardware‐Efficient Locality‐Preserving Graph Processing via Ferroelectric Fowler–Nordheim Tunneling Crossbar Array

Small, EarlyView.
Real‐world graph data are directly mapped onto an mCBA, enabling node similarity to be computed through a single current readout. Strongly nonlinear devices suppress long‐range multi‐hop contributions while preserving local connectivity, whereas weakly nonlinear devices allow excessive signal propagation.
Jae‐Hyun Lee, Jun‐Young Park, Jeong‐Min Lee, Hyun‐Jun Kang, Seon‐Jin Yoo, Ki‐Nam Park, Yoon Ho Jang, Joon‐Kyu Han   +7 more
wiley   +1 more source

Microscopic Stress Analysis of Silicon Carbide Devices Under Overcurrent Conditions in DC Solid‐State Circuit Breakers

IET Smart Energy Systems, EarlyView.
A coupled Saber–TCAD–thermo‐mechanical simulation framework is proposed to evaluate microscopic stresses in SiC MOSFETs under overcurrent operation. Ultrahigh gate‐voltage driving reduces thermal and mechanical stress but increases gate oxide electric‐field stress, revealing a reliability tradeoff for DC solid‐state circuit breakers.
Bin Yu, Jiawei Qin, Liang Chen, Zehua Dai   +3 more
wiley   +1 more source