Results 71 to 80 of about 2,850,351 (204)

Device Simulation of Hole Transport in 233 nm Multiquantum Well AlGaN‐Based UV LED

physica status solidi (a), Volume 223, Issue 17, 9 September 2026.
Deep‐UV LEDs suffer from low hole injection efficiency. In this work, electro optical simulations of AlGaN DUV LEDs with 6, 12, and 21 quantum wells, emitting at 233 nm, reveal efficient inter‐well hole transport within the active multiple quantum well region. The data are consistent with experimental findings.
Ibrahim Marouf, Friedhard Römer, Marcel Schilling, Franz Biebler, Jakob Höpfner, Massimo Grigoletto, Tim Wernicke, Michael Kneissl, Bernd Witzigmann   +8 more
wiley   +1 more source

Device Modeling Based on Cost-Sensitive Densely Connected Deep Neural Networks

IEEE Journal of the Electron Devices Society
Engineers used TCAD tools for semiconductor devices modeling. However, it is computationally expensive and time-consuming for advanced devices with smaller dimensions.
Xiaoying Tang, Zhiqiang Li, Lang Zeng, Hongwei Zhou, Xiaoxu Cheng, Zhenjie Yao   +5 more
doaj   +1 more source

Modeling of Diamond Trench Metal Oxide Semiconductor Barrier Schottky Rectifier Based on Dynamic Reverse Bias Simulation Framework

physica status solidi (a), Volume 223, Issue 17, 9 September 2026.
Time‐resolved mixed‐mode technology computer aided design simulations reveal that the transient ionization response of deep boron acceptors fundamentally modifies the charge‐sharing mechanism in diamond TMBS rectifiers. Consequently, the optimum trench geometry under dynamic reverse‐bias conditions differs significantly from conventional quasi‐static ...
Martin Kah, Nazareno Donato, Ethan Gardner, Nicolas Rouger, Rebecca Watkins, Calum Henderson, Jingfan Yang, Richard Jackman, Florin Udrea   +8 more
wiley   +1 more source

TCAD Sensitivity Analysis for Device Optimization

, 2009
We explore the use of sensitivity analysis for technology computer-aided design (TCAD) optimization. By directly coupling device response to model parameters, our approach may be used to generate derivatives for gradient-based optimization. An example is
Sanchez, Juan
core   +1 more source

High‐Mobility and Reliability Ultra‐Thin‐Channel Oxide Semiconductor Field‐Effect Transistors for Chip‐Interconnect‐Embedded Logic and Ferroelectric Memory

Advanced Materials, Volume 38, Issue 52, 16 September 2026.
BEOL‐compatible bilayer heterojunction oxide channel dual‐mode, memory‐logic ferroelectric transistor is fabricated to address long‐standing challenges of mobility and threshold voltage trade‐off by suppressing interfacial defects. This approach not only advances oxide semiconductors toward reliable high‐performance BEOL transistors but also opens new ...
Chun‐Kuei Chen, Sonu Hooda, Maheswari Sivan, Quanzhen Wan, Marco A. Villena, Bastien Beltrando, Zefeng Xu, Zihang Fang, Evgeny Zamburg, Juan B. Roldán, Luca Larcher, Gaurav Thareja, Aaron Voon‐Yew Thean   +12 more
wiley   +1 more source

TEM Image Analysis and Simulation Physics for Two-Step Recrystallization of Discretely Amorphized C₃H₅-Molecular-Ion-Implanted Silicon Substrate Surface

Crystals
In this study, we investigate the initial rapid recrystallization of a discretely amorphized C3H5-molecular-ion-implanted silicon (Si) substrate surface in the subsequent thermal annealing treatment through the analysis of plan-view transmission electron
Koji Kobayashi, Ryosuke Okuyama, Takeshi Kadono, Ayumi Onaka-Masada, Ryo Hirose, Akihiro Suzuki, Yoshihiro Koga, Koji Sueoka, Kazunari Kurita   +8 more
doaj   +1 more source

MoS2/Graphene Floating‐Gate Transistor Toward Non‐Volatile Memory and High‐Precision Synaptic Operations

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
The synaptic behavior of MoS2/graphene floating‐gate structures is shown. A subthreshold slope of 25 mV/decade, a high current ON/OFF ratio of 1010$^{10}$ with sub‐nanowatt power consumption are achieved. The programming–erasing time is approximately 11 ns, a memory window of 5.9 V, and a projected 10‐year retention of 91%.
Md. Ibrahim Ahmed, Sharnali Islam
wiley   +1 more source

A SiC Power MOSFET Model With an Improved Description of the JFET Region

IET Power Electronics
Based on the technology computer‐aided design (TCAD) simulation, a SPICE model of vertical silicon carbide power metal‐oxide‐semiconductor field effect transistor has been proposed with an improved description of the junction‐type field effect transistor
Xiangzhen Li, Manhong Zhang, Yumeng Cai, Xiaoguang Wei, Zhibin Zhao, QingXin Meng, Zezhou Chang   +6 more
doaj   +1 more source

Research on DIS Dosimeter Based on TCAD Simulation Method

Journal of Isotopes
Personal dose monitoring and environmental radiation monitoring are commonly conducted in places such as nuclear power plant reactor operations and nuclear medical facilities，often using thermoluminescent dosimeters (TLD).
Jiaqi XU, Feifei WANG, Fei GAO, Yuyang DING, Jiahang CHEN, Xinle TAN   +5 more
doaj   +1 more source

TWIN: Ternary Weight and Input Neural Network Accelerators Using an Experimentally Informed Ferroelectric Carbon Nanotube FET Compact Model

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
Ferroelectric HZO thin films enable negative differential resistance in calibrated FeCNTFET models, creating stable ternary switching states for compact multi‐valued logic. The resulting device‐to‐architecture framework demonstrates efficient ternary neural‐network accelerators with substantial area and power savings, highlighting ferroelectric CNT ...
Mohammad Khaleqi Qaleh Jooq, Abdolah Amirany, Martin F. Sarott, Beatriz Noheda, Johanna van Gent González, Kian Jafari, Elham Heidari, Mostafa Rahimi Azghadi, Hamed Dalir, Saeed Afshar   +9 more
wiley   +1 more source