Results 71 to 80 of about 5,000 (223)

Device Modeling Based on Cost-Sensitive Densely Connected Deep Neural Networks

IEEE Journal of the Electron Devices Society
Engineers used TCAD tools for semiconductor devices modeling. However, it is computationally expensive and time-consuming for advanced devices with smaller dimensions.
Xiaoying Tang, Zhiqiang Li, Lang Zeng, Hongwei Zhou, Xiaoxu Cheng, Zhenjie Yao   +5 more
doaj   +1 more source

Numerical simulation of ISFET structures for biosensing devices with TCAD tools [PDF]

BioMedical Engineering OnLine, 2015
Ion Sensitive Field Effect Transistors (ISFETs) are one of the primitive structures for the fabrication of biosensors (BioFETs). Aiming at the optimization of the design and fabrication processes of BioFETs, the correlation between technological parameters and device electrical response can be obtained by means of an electrical device-level simulation.
Daniele Passeri, Arianna Morozzi, Keida Kanxheri, Andrea Scorzoni   +3 more
openaire   +3 more sources

Schottky Barrier Engineering in n‐Type Organic Source‐Gated Transistors Enabling High Conductance

Advanced Materials Technologies, Volume 11, Issue 11, 5 June 2026.
This study introduces a modified source electrode architecture for n‐type organic source‐gated transistors (OSGTs). By integrating Schottky and Ohmic contact regions, the design achieves a thinner depletion envelope, enhancing mobility nearly tenfold and reducing threshold voltage.
Yonghee Kim, Jae Won Lee, Wonbeen Jeong, Eun Kwang Lee, Jiyoul Lee   +4 more
wiley   +1 more source

Crystallographic Analysis of a Nonvolatile HZO Phase Shifter Integrated on a Si3N4 Waveguide

Advanced Electronic Materials, Volume 12, Issue 11, 8 June 2026.
The nonvolatile resonance shift of an in‐plane HZO phase shifter integrated on a Si3N4 ring resonator is demonstrated through optical measurements under lateral bias. Combining 4D‐STEM with DFT simulations reveals phase redistribution and strain‐induced index changes as the microscopic origin of a nonvolatile photonic modulation.
Minsik Kong, Min Kang, Chanwoo Jeong, Kyuho Kim, Sunkyu Yu, Soo‐Yeon Lee   +5 more
wiley   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, Volume 36, Issue 41, 21 May 2026.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

TEM Image Analysis and Simulation Physics for Two-Step Recrystallization of Discretely Amorphized C₃H₅-Molecular-Ion-Implanted Silicon Substrate Surface

Crystals
In this study, we investigate the initial rapid recrystallization of a discretely amorphized C3H5-molecular-ion-implanted silicon (Si) substrate surface in the subsequent thermal annealing treatment through the analysis of plan-view transmission electron
Koji Kobayashi, Ryosuke Okuyama, Takeshi Kadono, Ayumi Onaka-Masada, Ryo Hirose, Akihiro Suzuki, Yoshihiro Koga, Koji Sueoka, Kazunari Kurita   +8 more
doaj   +1 more source

Improving the Comprehensive Modeling Framework for Energy Yield Simulations of Various Novel Photovoltaic Systems

Advanced Theory and Simulations, Volume 9, Issue 5, May 2026.
This work outlines a flexible, modular modelling framework for photovoltaic (PV) systems, consisting of two pre‐processing and six simulation steps. It enables detailed analysis from the cell to the system level. Through multiple case studies, the framework demonstrates its adaptability and effectiveness for a wide range of PV applications and research 
Youri Blom, Malte Ruben Vogt, Olindo Isabella, Rudi Santbergen   +3 more
wiley   +1 more source

MOOSE: A Physically Based Compact DC Model of SOI LDMOSFETs for Analogue Circuit Simulation [PDF]

, 2004
In this paper, we present a compact model for silicon-on-insulator (SOI) laterally double diffused (LD) MOSFETs. The model is complete insofar as it uses no subcircuits, and is intended to predict device operation in all regions of bias.
Swanenberg, M., Mistry, K., Redman-White, W., Benson, J., D'Halleweyn, N.V.T.   +4 more
core  

Computer simulation of GaAs and SOI devices using TCAD tools: an REU project [PDF]

, 1999
An undergraduate research project is outlined whose goal was to use the TCAD tools to simulate the performances of GaAs- and SOI-based devices and to compare them with the corresponding silicon-based devices.
Bergstrom, Sarah, Goel, Ashok, Mojica-Campbell, Aleli   +2 more
core   +1 more source

A SiC Power MOSFET Model With an Improved Description of the JFET Region

IET Power Electronics
Based on the technology computer‐aided design (TCAD) simulation, a SPICE model of vertical silicon carbide power metal‐oxide‐semiconductor field effect transistor has been proposed with an improved description of the junction‐type field effect transistor
Xiangzhen Li, Manhong Zhang, Yumeng Cai, Xiaoguang Wei, Zhibin Zhao, QingXin Meng, Zezhou Chang   +6 more
doaj   +1 more source