Results 81 to 90 of about 11,742 (216)
A device-level characterization approach to quantify the impacts of different random variation sources in FinFET technology [PDF]
, 2016 A simple device-level characterization approach to quantitatively evaluate the impacts of different random variation sources in FinFETs is proposed. The impacts of random dopant fluctuation are negligible for FinFETs with lightly doped channel, leaving ...
Asenov, Asen +6 more
core +2 more sources
Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures
physica status solidi (a), Volume 223, Issue 7, 7 April 2026.The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu +2 more
wiley +1 more source
CrystalsIn this study, we investigate the initial rapid recrystallization of a discretely amorphized C3H5-molecular-ion-implanted silicon (Si) substrate surface in the subsequent thermal annealing treatment through the analysis of plan-view transmission electron
Koji Kobayashi +8 more
doaj +1 more source
Asymmetric Contact Engineering for Bottleneck‐Free Transport in 2D MoS2 Field‐Effect Transistor
Advanced Functional Materials, Volume 36, Issue 34, 27 April 2026.Performance of 2D semiconductor transistors is limited by carrier transport bottlenecks arising from specific device geometries. By identifying this structural limitation, a bottleneck‐free asymmetric transistor architecture (BATA) is introduced to improve carrier transport.
Jinhyeok Pyo +10 more
wiley +1 more source
A SiC Power MOSFET Model With an Improved Description of the JFET Region
IET Power ElectronicsBased on the technology computer‐aided design (TCAD) simulation, a SPICE model of vertical silicon carbide power metal‐oxide‐semiconductor field effect transistor has been proposed with an improved description of the junction‐type field effect transistor
Xiangzhen Li +6 more
doaj +1 more source
Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector
, 2017 Silicon pixel detectors are at the core of the current ATLAS detector and its planned upgrade. As the detectors in closest proximity to the interaction point, they will be exposed to a significant amount of radiation: prior to the HL-LHC, the innermost ...
Nachman, Benjamin
core
Development and simulations of Enhanced Lateral Drift Sensors
, 2019 We present the concept of a new type of silicon tracking sensor called Enhanced Lateral Drift (ELAD) sensor. In ELAD sensors the spatial resolution of the impact position of ionising particles is improved by a dedicated charge sharing mechanism, which is
Jansen, Hendrik, Velyka, Anastasiia
core +2 more sources
Ion Crowding Effect in Unilaterally Downsized Perovskite Memristors
Advanced Science, Volume 13, Issue 21, 13 April 2026.The downscaling of perovskite memristors incorporating monocrystalline nanoplates is accompanied by an ion crowding effect, which greatly enhances the local electric field in the vicinity of electrode. The highly controlled crowding of anions and vacancies results in anisotropic switching characteristics as well as unique morphology modification ...
Conghui Tan +11 more
wiley +1 more source
Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer
Micromachines, 2019 A novel AlGaN/GaN high-electron-mobility transistor (HEMT) with a high gate and a multi-recessed buffer (HGMRB) for high-energy-efficiency applications is proposed, and the mechanism of the device is investigated using technology computer aided design ...
Shunwei Zhu +7 more
doaj +1 more source
TCAD simulations of radiation damage in 4H-SiC
Microelectronic Engineering4 pages, 4 ...
Burin, Jürgen +5 more
openaire +2 more sources