Results 81 to 90 of about 2,850,351 (204)

DEVSIM: A TCAD Semiconductor Device Simulator [PDF]

Journal of Open Source Software, 2022
openaire   +1 more source

Computationally Driven Advances in Cu‐CNT On‐Chip Interconnect Materials: From First Principles to Machine Learning

ENERGY &ENVIRONMENTAL MATERIALS, Volume 9, Issue 5, September 2026.
A multiscale framework integrating electronic, mechanical, and thermal analysis with machine learning to optimize carbon nanotube interconnects. As the component dimensions in integrated circuits shrink to extreme scales, the complexity of interconnect systems is increasing significantly, necessitating an urgent and comprehensive upgrade of ...
Changhong Zhang, Jie Liang, Yi Li, Zhenyu Wang, Haoyuan Li, Zhen Yuan, Jiuren Zhou, Rongmei Chen, Wensheng Zhao, Lei Zhang, Hanshen Xin, Jianhua Zhang   +11 more
wiley   +1 more source

Computational Study of the Electronic Performance of Cross-Plane Superlattice Peltier Devices [PDF]

, 2011
We use a state-of-the-art non-equilibrium quantum transport simulation code, NEMO- 1D, to address the device physics and performance benchmarking of cross-plane superlattice Peltier coolers.
Gerhard Klimeck, Lundstrom, M., Jeong, Changwook, Klimeck, Gerhard, Klimeck, G., Changwook Jeong, Mark Lundstrom, Lundstrom, Mark S.   +7 more
core   +1 more source

Carrier Mobility Enhancement in Two‐Dimensional Semiconductor

Interdisciplinary Materials, Volume 5, Issue 5, Page 796-833, September 2026.
In this review, we comprehensively describe recent progress in carrier mobility enhancement strategies for 2D semiconductor‐based field‐effect transistors considering the role of intrinsic defects, electrode contact interfaces, dielectric engineering, and lattice strain engineering.
Huchanghui Zuo, Yuehao Li, Xiangkai Liu, Chao Tan, Guohua Hu, Mingdong Dong, Zegao Wang   +6 more
wiley   +1 more source

Accelerating Transistor Simulations With Self-Supervised Graph Attention Networks

IEEE Access
Technology CAD (TCAD) tools are pivotal for transistor modeling, enabling physics-based simulations with high accuracy essential for developing next-generation technology nodes. However, their high computational cost and low throughput severely constrain
Tarek Mohamed, Hussam Amrouch
doaj   +1 more source

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

AIP Advances, 2017
In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs) characteristics fabricated on Si(111) substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD ...
Adarsh Nigam, Thirumaleshwara N. Bhat, Saravanan Rajamani, Surani Bin Dolmanan, Sudhiranjan Tripathy, Mahesh Kumar   +5 more
doaj   +1 more source

Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer

Micromachines, 2019
A novel AlGaN/GaN high-electron-mobility transistor (HEMT) with a high gate and a multi-recessed buffer (HGMRB) for high-energy-efficiency applications is proposed, and the mechanism of the device is investigated using technology computer aided design ...
Shunwei Zhu, Hujun Jia, Tao Li, Yibo Tong, Yuan Liang, Xingyu Wang, Tonghui Zeng, Yintang Yang   +7 more
doaj   +1 more source

Detection limit of a VCO based detection chain dedicated to particles recognition and tracking

EPJ Web of Conferences, 2018
A particle detection chain based on CMOS-SOI VCO circuit is presented. The solution is used for the recognition and the tracking of a given particle at circuit level.
Coulié K., Rahajandraibe W., Aziza H., Micolau G., Vauché R.   +4 more
doaj   +1 more source

DC Characteristics Optimization of a Double G-Shield 50 V RF LDMOS

Advances in Condensed Matter Physics, 2015
An N-type 50 V RF LDMOS with a RESURF (reduced surface field) structure of dual field plates (grounded shield, or G-shield) was investigated. The effect of the two field plates and N-drift region, including the junction depth and dopant concentration, on
Xiangming Xu, Pengliang Ci, Xiaoyu Tang, Jing Shi, Zhengliang Zhou, Jingfeng Huang, Peng-Fei Wang, David Wei Zhang   +7 more
doaj   +1 more source

Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations

IEEE Journal of the Electron Devices Society, 2017
In this paper, the type, activation energy (Ea) and cross section (σn) of the GaN buffer traps existing in the AlGaN/GaN high-electron mobility transistors are investigated through low frequency (LF) S-parameters measurements.
Nandha Kumar Subramani, Julien Couvidat, Ahmad Al Hajjar, Jean-Christophe Nallatamby, Raphael Sommet, Raymond Quere   +5 more
doaj   +1 more source