Results 81 to 90 of about 5,000 (223)
Computer Applications in Engineering Education, Volume 34, Issue 3, May 2026.ABSTRACT In engineering education, a “fidelity‐accessibility trade‐off” persists: accessible web simulations often lack physical accuracy, while complex industrial tools impose heavy cognitive loads. This hinders effective instruction in semiconductor physics in remote, hardware‐constrained environments.
Ali Akyüz +2 more
wiley +1 more source
DEVSIM: A TCAD Semiconductor Device Simulator [PDF]
Journal of Open Source Software, 2022 openaire +1 more source
EcoMat, Volume 8, Issue 5, May 2026.This review highlights how nanomaterials with high adsorption capacities including carbon‐based structures, transition metal oxides, 2D layers, and zeolites enable sensitive and selective detection of toxic gases and VOCs. Their tailored properties and sensing mechanisms drive the development of next‐generation gas sensors for environmental and ...
Hamdy A. Ismail +9 more
wiley +1 more source
Accelerating Transistor Simulations With Self-Supervised Graph Attention Networks
IEEE AccessTechnology CAD (TCAD) tools are pivotal for transistor modeling, enabling physics-based simulations with high accuracy essential for developing next-generation technology nodes. However, their high computational cost and low throughput severely constrain
Tarek Mohamed, Hussam Amrouch
doaj +1 more source
Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate
AIP Advances, 2017 In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs) characteristics fabricated on Si(111) substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD ...
Adarsh Nigam +5 more
doaj +1 more source
Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer
Micromachines, 2019 A novel AlGaN/GaN high-electron-mobility transistor (HEMT) with a high gate and a multi-recessed buffer (HGMRB) for high-energy-efficiency applications is proposed, and the mechanism of the device is investigated using technology computer aided design ...
Shunwei Zhu +7 more
doaj +1 more source
Subthreshold Swing Control in IGZO TFTs Using Floating‐Gate Engineering for AMOLED Displays
Journal of the Society for Information Display, Volume 34, Issue 5, Page 214-223, May 2026.This study demonstrates a novel IGZO floating‐gate thin‐film transistor (FG‐TFT) enabling precise subthreshold swing (SS) modulation via layout‐defined gate coupling ratio engineering. A source‐overlapped floating‐gate structure achieves wide, linear SS tuning without increasing device footprint, enhancing low‐gray uniformity in high‐resolution AMOLED ...
Sunyeol Bae +6 more
wiley +1 more source
Transport models and advanced numerical simulation of silicon-germanium heterojunction bipolar transistors [PDF]
, 2010 Applications in the emerging high-frequency markets for millimeter wave applications more and more use SiGe components for cost reasons. To support the technology effort, a reliable TCAD platform is required.
Sasso, Grazia
core
Interface Trap Distribution for HCI Reliability Assessment on Bend Gate Structure by 3D TCAD Simulation [PDF]
, 2012 [[abstract]]"This paper demonstrates electrical degradation due to hot carrier injection (HCI) stress for devices with different bend gate structures by three-dimensional (3D) TCAD simulation.
高立學;Gau, Li-Shiue
core
Detection limit of a VCO based detection chain dedicated to particles recognition and tracking
EPJ Web of Conferences, 2018 A particle detection chain based on CMOS-SOI VCO circuit is presented. The solution is used for the recognition and the tracking of a given particle at circuit level.
Coulié K. +4 more
doaj +1 more source