Results 101 to 110 of about 11,742 (216)
Description of radiation damage in diamond sensors using an effective defect model
, 2017 The BCML system is a beam monitoring device in the CMS experiment at the LHC. As detectors poly-crystalline diamond sensors are used. Here high particle rates occur from the colliding beams scattering particles outside the beam pipe.
Dabrowski, Anne +3 more
core +1 more source
Generating Predictive Models for Emerging Semiconductor Devices
IEEE Journal of the Electron Devices SocietyCircuit design requires fast and scalable models which are compatible to modern electronic design automation tools. For this task typically analytical compact models are preferred.
Maximilian Reuter +7 more
doaj +1 more source
Universal Charge-Conserving TFET SPICE Model Incorporating Gate Current and Noise
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2016 An analytical compact model for tunnel field-effect transistor (TFET) circuit simulation is extended by adding a gate tunnel current model, a charge-based capacitor model, and a noise model. The equation set is broadly applicable across materials systems
Hao Lu +5 more
doaj +1 more source
IEEE Journal of the Electron Devices SocietyThis study presents a compact model for three-dimensional (3D) NAND flash memory that incorporates ferroelectric properties to enable accurate circuit-level simulations.
Sunghyun Woo +3 more
doaj +1 more source
AIP Advances, 2018 In order to improve the radiation resistance of semiconductor detector, 3D trench electrode Si detector structures have been proposed by the Brookhaven National Laboratory (BNL) in 2009.
Chuan Liao +4 more
doaj +1 more source
A 1 μm-Pitch Quanta Image Sensor Jot Device With Shared Readout
IEEE Journal of the Electron Devices Society, 2016 Characterization of a 1 μm-pitch, four-way shared readout quanta image sensor jot device is reported. The jot device achieved 0.48e- r.m.s. read noise with 230 μV/econversion gain.
Jiaju Ma, Leo Anzagira, Eric R. Fossum
doaj +1 more source
A HV silicon vertical JFET: TCAD simulations
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2019 Abstract In the future ATLAS Inner Tracker detector (ITk), several silicon strip modules will be biased by a single High-Voltage (HV) line, so that a switch between each strip sensor and the HV line is required to disconnect faulty sensors. Such a switch must satisfy strict requirements, such as being radiation hard, being able to sustain high ...
Gabriele Giacomini, Wei Chen, David Lynn
openaire +2 more sources
Design and TCAD Simulation of p+–n+ InAs‐Based TFET
Nano SelectTunnel field‐effect transistors (TFETs) are promising for ultra‐low‐power electronics, yet their practical adoption is hindered by limited ON‐current and strong sensitivity of band‐to‐band tunneling (BTBT) to geometry, doping, and quantum confinement ...
Muhammad Elgamal +5 more
doaj +1 more source
Power Electronic Devices and ComponentsThis paper explores the design and optimization of the buffer layer in Silicon Carbide (SiC) N-type Gate Commutated Thyristors (GCTs) to enhance low-loss switching and ensure safe operation in ultra high-voltage (over 10 kV) applications.
Qinze Cao +5 more
doaj +1 more source
Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade
, 2013 In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost ...
Bagolini, A. +9 more
core +1 more source