Results 101 to 110 of about 2,850,351 (204)

Physics-based SS and SSLS variability assessment of microwave devices through efficient sensitivity analysis [PDF]

, 2012
Bonani, Fabrizio, F. Bertazzi, F. Bonani, Ghione, Giovanni, Donati Guerrieri, Simona, Bertazzi, Francesco, S. Donati Guerrieri, G. Ghione   +7 more
core   +1 more source

TCAD simulations for radiation-tolerant silicon sensors

Proceedings of The 32nd International Workshop on Vertex Detectors — PoS(VERTEX2023)
Future High Energy Physics experiments require sensors to operate at extreme fluences exceeding1×1017 1 MeV n𝑒𝑞/cm2. Therefore, technologies used for the HL-LHC scenario will be no longerapplicable and novel sensors and readout electronics must be devised.
Morozzi A., Moscatelli F., Croci T., Fondacci A., Bilei G. M., Passeri D.   +5 more
openaire   +2 more sources

Optimization of the buffer layer in a 15kV SiC N-type gate commutated thyristor for safe, low-loss switching

Power Electronic Devices and Components
This paper explores the design and optimization of the buffer layer in Silicon Carbide (SiC) N-type Gate Commutated Thyristors (GCTs) to enhance low-loss switching and ensure safe operation in ultra high-voltage (over 10 kV) applications.
Qinze Cao, Neophytos Lophitis, Arne Benjamin Renz, Kyrylo Melnyk, Marina Antoniou, Peter Michael Gammon   +5 more
doaj   +1 more source

Design and TCAD Simulation of p+–n+ InAs‐Based TFET

Nano Select
Tunnel field‐effect transistors (TFETs) are promising for ultra‐low‐power electronics, yet their practical adoption is hindered by limited ON‐current and strong sensitivity of band‐to‐band tunneling (BTBT) to geometry, doping, and quantum confinement ...
Muhammad Elgamal, Mona El Sabbagh, Fatma Shokry, Ahmed Shaker, Mohammed El‐Banna, Mohamed Abouelatta   +5 more
doaj   +1 more source

Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation. [PDF]

Micromachines (Basel), 2022
Zhao D, Wang Y, Chen Y, Shao J, Fu Z, Duan B, Liu F, Li X, Li T, Yang X, Li M, Yang Y.   +11 more
europepmc   +1 more source

Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation. [PDF]

Micromachines (Basel), 2022
Zhu Z, Cao W, Huang X, Shi Z, Zhou D, Xu W.   +5 more
europepmc   +1 more source

A TCAD tool for the simulation of the CVD process based on cellular automata

, 2001
The development of next-generation VLSI circuits with deep submicron technologies demands fundamental understanding of the wafer surface reaction kinetics.
I. Karafyllidis, A. Thanailakis, G.Ch. Sirakoulis   +2 more
core   +1 more source

Wrapping Amorphous Indium-Gallium-Zinc-Oxide Transistors with High Current Density

Electronic Materials
Amorphous oxide semiconductor transistors with a high current density output are highly desirable for large-area electronics. In this study, wrapping amorphous indium-gallium-zinc-oxide (a-IGZO) transistors are proposed to enhance the current density ...
Jiaxin Liu, Shan Huang, Zhenyuan Xiao, Ning Li, Jaekyun Kim, Jidong Jin, Jiawei Zhang   +6 more
doaj   +1 more source

Breakdown Behavior of Metal Contact Positions in GaN HEMT with Nitrogen-Implanted Gate Using TCAD Simulation. [PDF]

Micromachines (Basel), 2022
Sheu G, Song YL, Mogarala R, Susmitha D, Issac K.   +4 more
europepmc   +1 more source

Interface Trap Distribution for HCI Reliability Assessment on Bend Gate Structure by 3D TCAD Simulation

, 2012
[[abstract]]"This paper demonstrates electrical degradation due to hot carrier injection (HCI) stress for devices with different bend gate structures by three-dimensional (3D) TCAD simulation.
高立學;Gau, Li-Shiue
core