Results 101 to 110 of about 5,000 (223)

A Novel 3D TCAD simulation of a Thermoelectric Module configured for Thermoelectric Power Generation [PDF]

, 2011
This paper documents the novel design, modelling and 3D simulation of a single thermoelectric couple using the Technology Computer Aided Design (TCAD) semiconductor simulation software package by Synopsys. Preliminary simulation results are presented for
Taylor, Ian, Shammas, Noel, Grainger, Stephen, Gould, Chris   +3 more
core  

Simulation of femtosecond pulsed laser effects on MOS electronics using TCAD Sentaurus customized models [PDF]

, 2010
Pulsed laser illumination constitutes an excellent tool to emulate the effects produced by the impact of highly energetic particles on electronic circuits.
I. López‐Calle, Fernandez Martínez, P., D. Flores, Flores, D., M. A. Aguirre, S. Hidalgo, F. R. Palomo, J. M. Mogollón, P. Fernández‐Martínez, Palomo, F.R., Mogollón, J.M., Hidalgo, S., J. A. de Agapito, Agapito, J. A., López Calle, Isabel, Aguirre, M.A.   +15 more
core   +1 more source

Radiation damage modeling: TCAD simulation [PDF]

, 2019
The exceptional performance of the silicon sensors in the radiation environment has led to their extensive application in high energy physics. Even so, the future experiments foresee these sensors to be exposed to higher radiation levels.
Geetika Ms Jain, Jain, Geetika
core   +1 more source

Physics-based TCAD Simulation of GaN MIS-HEMT Device [PDF]

, 2019
[[abstract]]GaN material offers a very good comparative advantage as a candidate for power device material compared to Silicon. The capability to be able to use for high voltage application and high electron mobility are some of the demanded part for ...
Wijaya, Adhi Cahyo
core  

3D TCAD modeling of NO2CNT FET sensors [PDF]

, 2018
A new approach for TCAD modeling of CNT FET gas sensors is presented, whose key feature is the use of an effective Gaussian DOS to mimic the 1D CNT DOS. The TCAD procedure has been applied to the simulation of a suspended CNT FET for NO2sensing.
Sebastian Eberle, Roman, Cosmin, Gnani, Elena, Hierold, Christofer, Eberle, Sebastian, Stefania Carapezzi, Cosmin Roman, Christofer Hierold, Elena Gnani, Reggiani, Susanna, Carapezzi, Stefania, Gnudi, Antonio, Susanna Reggiani, Antonio Gnudi   +13 more
core   +1 more source

A 1 μm-Pitch Quanta Image Sensor Jot Device With Shared Readout

IEEE Journal of the Electron Devices Society, 2016
Characterization of a 1 μm-pitch, four-way shared readout quanta image sensor jot device is reported. The jot device achieved 0.48e- r.m.s. read noise with 230 μV/econversion gain.
Jiaju Ma, Leo Anzagira, Eric R. Fossum
doaj   +1 more source

TCAD simulation of stitching for passive CMOS strip detectors

Journal of Instrumentation
Abstract Most of the tracking detectors for high energy particle experiments are filled with silicon detectors since they are radiation hard, they can give very small spatial resolution and they can take advantage of the silicon electronics foundries' developments and production lines.
M. Baselga, J-H. Arling, N. Davis, J. Dingfelder, I.M. Gregor, M. Hauser, F. Hügging, K. Jakobs, M. Karagounis, R. Koppenhöfer, K. Kröninger, F. Lex, U. Parzefall, B. Sari, S. Spannagel, D. Sperlich, J. Weingarten, I. Zatocilova   +17 more
openaire   +3 more sources

The temperature dependent TCAD and SPICE modeling of AlGaN/GaN HEMTs [PDF]

, 2013
In this work, the temperature dependent TCAD and SPICE modeling platform of AlGaN/GaN HEMTs has been established by using Sentaurus TCAD and Silvaco UTMOST IV. Typically, the temperature co-efficient of series resistance, trans-conductance, sub-threshold
Haifeng Sun, Susai Lawrence Selvaraj, Wang, Weizhu, Lo, Guo-Qiang, Zhou, Xing, Yuan, Li, Xing Zhou, Lee, Kean Boon, Guo-Qiang Lo, Kean Boon Lee, Selvaraj, Susai Lawrence, Weizhu Wang, Sun, Haifeng, Li Yuan   +13 more
core   +1 more source

Design and TCAD Simulation of p+–n+ InAs‐Based TFET

Nano Select
Tunnel field‐effect transistors (TFETs) are promising for ultra‐low‐power electronics, yet their practical adoption is hindered by limited ON‐current and strong sensitivity of band‐to‐band tunneling (BTBT) to geometry, doping, and quantum confinement ...
Muhammad Elgamal, Mona El Sabbagh, Fatma Shokry, Ahmed Shaker, Mohammed El‐Banna, Mohamed Abouelatta   +5 more
doaj   +1 more source

High mobility and quantum well transistors: design and TCAD simulation [PDF]

, 2013
For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements.
Hellings, Geert, De Meyer, Kristin
core   +1 more source