Results 121 to 130 of about 2,850,351 (204)

Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review. [PDF]

open access: yesDiscov Nano
Zhao H   +6 more
europepmc   +1 more source

Heavy Ions Induced Single-Event Transient in SiGe-on-SOI HBT by TCAD Simulation. [PDF]

open access: yesMicromachines (Basel)
Long Y   +10 more
europepmc   +1 more source

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