Results 121 to 130 of about 11,742 (216)

Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework. [PDF]

Micromachines (Basel), 2021
Medina-Bailon C, Dutta T, Rezaei A, Nagy D, Adamu-Lema F, Georgiev VP, Asenov A.   +6 more
europepmc   +1 more source

TCAD Silicon Sensor Simulations [PDF]

Proceedings of The 20th Anniversary International Workshop on Vertex Detectors — PoS(Vertex 2011), 2012
openaire   +2 more sources

TCAD simulation of stitching for passive CMOS strip detectors

Journal of Instrumentation
Abstract Most of the tracking detectors for high energy particle experiments are filled with silicon detectors since they are radiation hard, they can give very small spatial resolution and they can take advantage of the silicon electronics foundries' developments and production lines.
M. Baselga, J-H. Arling, N. Davis, J. Dingfelder, I.M. Gregor, M. Hauser, F. Hügging, K. Jakobs, M. Karagounis, R. Koppenhöfer, K. Kröninger, F. Lex, U. Parzefall, B. Sari, S. Spannagel, D. Sperlich, J. Weingarten, I. Zatocilova   +17 more
openaire   +3 more sources

3D Stacked Spin Qubit by TCAD Simulations

2024 International 3D Systems Integration Conference (3DIC)
Spin qubit systems are promising candidates for Si-based quantum computing. The conventional spin-qubit cell consists of control and readout units around a quantum dot (QD) with the excess electrons functioning as spin qubits. This complicates the integration of qubits because of the many wires and extra mechanisms, such as the requirement of shuttling
openaire   +2 more sources

Symbolic Model Evaluation for TCAD Device Simulation

, 2009
Symbolic model evaluation is a powerful method for de- veloping models for technology computer-aided design (TCAD) device simulation. It gives users the ability to accurately describe physical phenomena. Coupled with automatic creation of derivative expressions, new models can be rapidly developed with performance rivaling source code approaches. A new
openaire   +1 more source

Overview of software tools for modeling single event upsets in microelectronic devices

Безопасность информационных технологий, 2016
The paper presents the results of the analysis of existing simulation tools for evaluation of single event upset susceptibility of microelectronic devices with deep sub-micron feature sizes. This simulation tools are meant to replace obsolete approach to
Anatoly Alexandrovich Smolin
doaj  

Investigation of Monolithic 3D Integrated Circuit Inverter with Feedback Field Effect Transistors Using TCAD Simulation. [PDF]

Micromachines (Basel), 2020
Oh JH, Yu YS.
europepmc   +1 more source

Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation. [PDF]

Sci Rep
Lee KH, Yang Y, Heo J, Kim JH.
europepmc   +1 more source

TCAD Simulation of STI Depth and SiO₂/Silicon Interface Trap Modulation Effects on Low-Frequency Noise in HZO-Based Nanosheet FETs. [PDF]

Nanomaterials (Basel)
Lee W, Lee J.
europepmc   +1 more source

Heavy Ions Induced Single-Event Transient in SiGe-on-SOI HBT by TCAD Simulation. [PDF]

Micromachines (Basel)
Long Y, Aierken A, Liu X, Liu M, Gao C, Wang G, Wang D, Majumdar S, Xuan Y, Liu M, Bi J.   +10 more
europepmc   +1 more source