A New Nonlinear Model of Body Resistance in Nanometer PD SOI MOSFETs [PDF]
Journal of Intelligent Procedures in Electrical Technology, 2011 In this paper, a nonlinear model for the body resistance of a 45nm PD SOI MOSFET is developed. This model verified on the base of the small signal three-dimensional simulation results.
Arash Daghighi, Azam Askari Khoshuei
doaj
Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps. [PDF]
Micromachines (Basel), 2021 Song YL, Reddy MK, Chang LM, Sheu G.
europepmc +1 more source
A Novel Nitrogen Ion Implantation Technique for Turning Thin Film "Normally On" AlGaN/GaN Transistor into "Normally Off" Using TCAD Simulation. [PDF]
Membranes (Basel), 2021 Sheu G +4 more
europepmc +1 more source
TCAD Silicon Sensor Simulations [PDF]
Proceedings of The 20th Anniversary International Workshop on Vertex Detectors — PoS(Vertex 2011), 2012 openaire +2 more sources
Fully Depleted Monolithic Active Microstrip Sensors: TCAD Simulation Study of an Innovative Design Concept. [PDF]
Sensors (Basel), 2021 De Cilladi L +4 more
europepmc +1 more source
Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework. [PDF]
Micromachines (Basel), 2021 Medina-Bailon C +6 more
europepmc +1 more source
Analysis of Improved Performance under Negative Bias Illumination Stress of Dual Gate Driving a-IGZO TFT by TCAD Simulation [PDF]
, 2016 We report the numerical simulation of the effect of a dual gate (DG) TFT structure operating under dual gate driving on improving negative bias illumination stress (NBIS) of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs).
Heiler, GN +8 more
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Simulation of Si CMES using synopsys sentaurus TCAD tools [PDF]
, 2012 Includes bibliographical references (pages 92-100)This paper is concentrated on the development of a complete complementary silicon MESFET technology. The basic difference between MOS and MES are pointed out and design criteria for CMES inverters using ...
Shah, Malav
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Deep-level transient spectroscopy (DLTS) TCAD-based simulation [PDF]
, 2015 International audienceOptimization of solar cells device and materials require a set of tools for the control and engineering of traps states which can be introduced during the fabrication process. Deep Level Transient Spectroscopy (DLTS) technique seems
Kleider, Jean-Paul +3 more
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A General OO-PDE Solver for TCAD Applications [PDF]
, 1994 Technology CAD (TCAD) is a broad area of simulation which is concerned with modeling both the structural and the electrical properties of semiconductor devices. Although TCAD utilizes computational geometry (deposition, etching), monte-carlo methods (ion
D. W. Yergeau +2 more
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