Interpreting artificial neural network-based modeling of 4 H-SiC mosfets using explainable AI. [PDF]
Hsiao YS +8 more
europepmc +1 more source
Virtualization as a New Scaling Law for Semiconductor Devices Beyond Geometric Scaling. [PDF]
Wang Z +8 more
europepmc +1 more source
Transient Charge Collection in Ultra-Thin SiC Membranes for Single-Ion Detection. [PDF]
Sangregorio E +5 more
europepmc +1 more source
Combining quasi-one-dimensional modeling with region-wise structure analysis for rapid technology computer-aided design simulations of gate-all-around MOSFETs. [PDF]
Lee KW +4 more
europepmc +1 more source
Temperature-Dependent Reverse-Recovery Behavior Analysis and Circuit-Level Mitigation of Superjunction MOSFETs. [PDF]
Cui W +6 more
europepmc +1 more source
Extraction of Electron and Hole Drift Velocities in Thin 4H-SiC PIN Detectors Using High-Frequency Readout Electronics. [PDF]
Gsponer A +7 more
europepmc +1 more source
Pre-Silicon Accurate SPICE Modeling of Trench MOSFETs via Advanced TCAD Simulations and Dynamic Validation. [PDF]
Tariq A +7 more
europepmc +1 more source
CuGaSe<sub>2</sub> photosensitive devices: a study of reliability and photoresponse with defects. [PDF]
U KM, Aich S, Routray S.
europepmc +1 more source
Optimization and experimental demonstration of mesh-patterned 4H-SiC betavoltaic cells for enhanced power density. [PDF]
Kim KM +5 more
europepmc +1 more source

