Results 131 to 140 of about 5,000 (223)

Simulation of silicon carbide PN-junction diode using Syncopys TCAD Sentaurus tools for high power applications [PDF]

, 2015
Includes bibliographical references (leaves 85-90)The Fabrication Process design and electrical simulation of a Silicon Carbide PNJunction diode is proposed utilizing the software Synopsys Sentaurus TCAD modeling ...
Arrabairu, Rakesh Reddy
core  

Overview of software tools for modeling single event upsets in microelectronic devices

Безопасность информационных технологий, 2016
The paper presents the results of the analysis of existing simulation tools for evaluation of single event upset susceptibility of microelectronic devices with deep sub-micron feature sizes. This simulation tools are meant to replace obsolete approach to
Anatoly Alexandrovich Smolin
doaj  

Investigation of Monolithic 3D Integrated Circuit Inverter with Feedback Field Effect Transistors Using TCAD Simulation. [PDF]

Micromachines (Basel), 2020
Oh JH, Yu YS.
europepmc   +1 more source

TCAD simulations of silicon strip and pixel [PDF]

Proceedings of The 20th Anniversary International Workshop on Vertex Detectors — PoS(Vertex 2011), 2012
openaire   +1 more source

Physics-based Small-Signal sensitivity analysis for the variability aware assessment of devices and linear analog subsystems [PDF]

, 2011
Bonani, Fabrizio, Ghione, Giovanni, Donati Guerrieri, Simona, Bertazzi, Francesco   +3 more
core  

Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review. [PDF]

Discov Nano
Zhao H, Firdaus A, Farizuan M, Tan WH, Kawarada H, Falina S, Syamsul M.   +6 more
europepmc   +1 more source

Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation. [PDF]

Sci Rep
Lee KH, Yang Y, Heo J, Kim JH.
europepmc   +1 more source

TCAD Simulation of STI Depth and SiO₂/Silicon Interface Trap Modulation Effects on Low-Frequency Noise in HZO-Based Nanosheet FETs. [PDF]

Nanomaterials (Basel)
Lee W, Lee J.
europepmc   +1 more source

Heavy Ions Induced Single-Event Transient in SiGe-on-SOI HBT by TCAD Simulation. [PDF]

Micromachines (Basel)
Long Y, Aierken A, Liu X, Liu M, Gao C, Wang G, Wang D, Majumdar S, Xuan Y, Liu M, Bi J.   +10 more
europepmc   +1 more source

TCAD Simulation Study of Electrical Performance of a Novel High-Purity Germanium Drift Detector. [PDF]

Micromachines (Basel)
Wang M, Li Z, Xiong B, Xiao Y.
europepmc   +1 more source