Results 111 to 120 of about 5,000 (223)

Optimization of the buffer layer in a 15kV SiC N-type gate commutated thyristor for safe, low-loss switching

Power Electronic Devices and Components
This paper explores the design and optimization of the buffer layer in Silicon Carbide (SiC) N-type Gate Commutated Thyristors (GCTs) to enhance low-loss switching and ensure safe operation in ultra high-voltage (over 10 kV) applications.
Qinze Cao, Neophytos Lophitis, Arne Benjamin Renz, Kyrylo Melnyk, Marina Antoniou, Peter Michael Gammon   +5 more
doaj   +1 more source

Physics-based SS and SSLS variability assessment of microwave devices through efficient sensitivity analysis [PDF]

, 2012
Bonani, Fabrizio, F. Bertazzi, F. Bonani, Ghione, Giovanni, Donati Guerrieri, Simona, Bertazzi, Francesco, S. Donati Guerrieri, G. Ghione   +7 more
core   +1 more source

The Modelling and Simulation of Bi2Te3 Thermoelectric Generators in Synopsys TCAD [PDF]

, 2015
This paper demonstrates the modelling and simulation of thermoelectric generators using Synopsys Technology Computer Aided Design (TCAD) semiconductor design and simulation software.
SHAMMAS, Noel, GOULD, Christopher
core  

Wrapping Amorphous Indium-Gallium-Zinc-Oxide Transistors with High Current Density

Electronic Materials
Amorphous oxide semiconductor transistors with a high current density output are highly desirable for large-area electronics. In this study, wrapping amorphous indium-gallium-zinc-oxide (a-IGZO) transistors are proposed to enhance the current density ...
Jiaxin Liu, Shan Huang, Zhenyuan Xiao, Ning Li, Jaekyun Kim, Jidong Jin, Jiawei Zhang   +6 more
doaj   +1 more source

Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation. [PDF]

Micromachines (Basel), 2022
Zhao D, Wang Y, Chen Y, Shao J, Fu Z, Duan B, Liu F, Li X, Li T, Yang X, Li M, Yang Y.   +11 more
europepmc   +1 more source

TCAD simulations for radiation-tolerant silicon sensors

Proceedings of The 32nd International Workshop on Vertex Detectors — PoS(VERTEX2023)
Future High Energy Physics experiments require sensors to operate at extreme fluences exceeding1×1017 1 MeV n𝑒𝑞/cm2. Therefore, technologies used for the HL-LHC scenario will be no longerapplicable and novel sensors and readout electronics must be devised.
Morozzi A., Moscatelli F., Croci T., Fondacci A., Bilei G. M., Passeri D.   +5 more
openaire   +2 more sources

Fabrication and Simulating Solar Cell Devices using Silvaco TCAD Tools [PDF]

, 2013
Solar cells are p-i-n photodiodes, which are operated under forward bias. The intention is to convert the incoming optical power into electrical power with maximum efficiency. In this paper we are going to design a solar cell and simulation of solar cell
Srivastava, Anand Kumar, Chahar, Sanjay Singh   +1 more
core   +1 more source

A Two-Prong Approach to the Simulation of DC-RSD: TCAD and SPICE [PDF]

The DC-coupled resistive silicon detectors (DC-RSD) are the evolution of the AC-coupled RSD (RSD) design, both based on the low-gain avalanche diode (LGAD) technology. The DC-RSD design concept intends to address a few known issues present in RSDs (e.g.,
Robutti, E., Passeri, D., Mulargia, R., Fondacci, A., Cartiglia, N., Ferrero, M., Arneodo, M., Morozzi, A., Monaco, V., Menzio, L., Arcidiacono, R., Asenov, P., Sola, V., Croci, T., Moscatelli, F.   +14 more
core   +1 more source

Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation. [PDF]

Micromachines (Basel), 2022
Zhu Z, Cao W, Huang X, Shi Z, Zhou D, Xu W.   +5 more
europepmc   +1 more source

Breakdown Behavior of Metal Contact Positions in GaN HEMT with Nitrogen-Implanted Gate Using TCAD Simulation. [PDF]

Micromachines (Basel), 2022
Sheu G, Song YL, Mogarala R, Susmitha D, Issac K.   +4 more
europepmc   +1 more source