Results 111 to 120 of about 11,742 (216)

Wrapping Amorphous Indium-Gallium-Zinc-Oxide Transistors with High Current Density

Electronic Materials
Amorphous oxide semiconductor transistors with a high current density output are highly desirable for large-area electronics. In this study, wrapping amorphous indium-gallium-zinc-oxide (a-IGZO) transistors are proposed to enhance the current density ...
Jiaxin Liu, Shan Huang, Zhenyuan Xiao, Ning Li, Jaekyun Kim, Jidong Jin, Jiawei Zhang   +6 more
doaj   +1 more source

Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation. [PDF]

Micromachines (Basel), 2022
Zhao D, Wang Y, Chen Y, Shao J, Fu Z, Duan B, Liu F, Li X, Li T, Yang X, Li M, Yang Y.   +11 more
europepmc   +1 more source

Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation. [PDF]

Micromachines (Basel), 2022
Zhu Z, Cao W, Huang X, Shi Z, Zhou D, Xu W.   +5 more
europepmc   +1 more source

TCAD simulations of humidity-induced breakdown of silicon sensors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
The breakdown voltage of silicon sensors is known to be affected by the ambient humidity. To understand the sensor’s humidity sensitivity, Synopsys TCAD was used to simulate n-in-p sensors for different effective relative humidities. Photon emission of hot electrons was imaged with a microscope to locate breakdown in the edge-region of the sensor.
Ninca, Ilona Stefana, Bloch, I., Brüers, B., Fadeyev, V., Fernandez-Tejero, J., Jessiman, C., Keller, J., Klein, C. T., Koffas, T., Lacker, H. M., Li, P., Scharf, C., Staats, E., Ullan, M., Unno, Y.   +14 more
openaire   +4 more sources

Breakdown Behavior of Metal Contact Positions in GaN HEMT with Nitrogen-Implanted Gate Using TCAD Simulation. [PDF]

Micromachines (Basel), 2022
Sheu G, Song YL, Mogarala R, Susmitha D, Issac K.   +4 more
europepmc   +1 more source

DEVSIM: A TCAD Semiconductor Device Simulator [PDF]

Journal of Open Source Software, 2022
openaire   +1 more source

A New Nonlinear Model of Body Resistance in Nanometer PD SOI MOSFETs [PDF]

Journal of Intelligent Procedures in Electrical Technology, 2011
In this paper, a nonlinear model for the body resistance of a 45nm PD SOI MOSFET is developed. This model verified on the base of the small signal three-dimensional simulation results.
Arash Daghighi, Azam Askari Khoshuei
doaj  

A Novel Nitrogen Ion Implantation Technique for Turning Thin Film "Normally On" AlGaN/GaN Transistor into "Normally Off" Using TCAD Simulation. [PDF]

Membranes (Basel), 2021
Sheu G, Song YL, Susmitha D, Issac K, Mogarala R.   +4 more
europepmc   +1 more source

Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps. [PDF]

Micromachines (Basel), 2021
Song YL, Reddy MK, Chang LM, Sheu G.
europepmc   +1 more source

Fully Depleted Monolithic Active Microstrip Sensors: TCAD Simulation Study of an Innovative Design Concept. [PDF]

Sensors (Basel), 2021
De Cilladi L, Corradino T, Dalla Betta GF, Neubüser C, Pancheri L.   +4 more
europepmc   +1 more source