Results 91 to 100 of about 11,742 (216)

Ultraviolet Photodetectors Based on 4H‐SiC With Honeycomb‐Like Light‐Trapping Structures

Advanced Science, Volume 13, Issue 22, 17 April 2026.
A facile photoelectrochemical etching method creates honeycomb‐like light‐trapping microstructures on SiC. These microstructures suppress UV reflection and enhance absorption by extending the optical path and facilitating multiple internal reflections, while strengthening the local electric field.
Huifan Xiong, Xiliang Luo, Qunsi Yang, Yibo Hu, Jieshi Chen, Lihui Song, Deren Yang, Xiaodong Pi   +7 more
wiley   +1 more source

Accelerating Transistor Simulations With Self-Supervised Graph Attention Networks

IEEE Access
Technology CAD (TCAD) tools are pivotal for transistor modeling, enabling physics-based simulations with high accuracy essential for developing next-generation technology nodes. However, their high computational cost and low throughput severely constrain
Tarek Mohamed, Hussam Amrouch
doaj   +1 more source

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

AIP Advances, 2017
In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs) characteristics fabricated on Si(111) substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD ...
Adarsh Nigam, Thirumaleshwara N. Bhat, Saravanan Rajamani, Surani Bin Dolmanan, Sudhiranjan Tripathy, Mahesh Kumar   +5 more
doaj   +1 more source

Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs

, 2015
We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors.
Akyol, Fatih, Bajaj, Sanyam, Chumbes, Eduardo M., Hung, Ting-Hsiang, Khurgin, Jacob, Krishnamoorthy, Sriram, Park, Pil Sung, Rajan, Siddharth, Reza, Shahed, Shoron, Omor F.   +9 more
core   +1 more source

Coupled Ionic–Electronic Transport in Vertical OECTs: A Combined Experimental and Simulation Study

Advanced Electronic Materials, Volume 12, Issue 8, 20 April 2026.
The authors present a combined experimental and simulation study of vertical organic electrochemical transistors based on n‐type BBL. Their model self‐consistently captures ionic–electronic coupling, diffusion‐dominated transport, and interface voltage losses.
Doaa Shamalia, Zachary Laswick, Jonathan Rivnay, Nir Tessler   +3 more
wiley   +1 more source

TCAD Simulation Study of ESD Behavior of InGaAs/InP Heterojunction Tunnel FETs

Crystals, 2020
For the first time, we investigated the electrostatic discharge (ESD) behavior of an InGaAs/InP heterojunction tunneling field effect transistor (HTFET). The device structure in this study has a high on-state current without extra process steps.
Zhihua Zhu, Zhaonian Yang, Yingtao Zhang, Xiaomei Fan, Juin Jei Liou, Wenbing Fan   +5 more
doaj   +1 more source

Detection limit of a VCO based detection chain dedicated to particles recognition and tracking

EPJ Web of Conferences, 2018
A particle detection chain based on CMOS-SOI VCO circuit is presented. The solution is used for the recognition and the tracking of a given particle at circuit level.
Coulié K., Rahajandraibe W., Aziza H., Micolau G., Vauché R.   +4 more
doaj   +1 more source

Development of New 3D Pixel Sensors for Phase 2 Upgrades at LHC

, 2016
We report on the development of new 3D pixel sensors for the Phase 2 Upgrades at the High-Luminosity LHC (HL-LHC). To cope with the requirements of increased pixel granularity (e.g., 50x50 or 25x100 um2 pixel size) and extreme radiation hardness (up to a
Betta, Gian-Franco Dalla, Boscardin, Maurizio, Mendicino, Roberto, Ronchin, Sabina, Sultan, DMS, Zorzi, Nicola   +5 more
core   +1 more source

DC Characteristics Optimization of a Double G-Shield 50 V RF LDMOS

Advances in Condensed Matter Physics, 2015
An N-type 50 V RF LDMOS with a RESURF (reduced surface field) structure of dual field plates (grounded shield, or G-shield) was investigated. The effect of the two field plates and N-drift region, including the junction depth and dopant concentration, on
Xiangming Xu, Pengliang Ci, Xiaoyu Tang, Jing Shi, Zhengliang Zhou, Jingfeng Huang, Peng-Fei Wang, David Wei Zhang   +7 more
doaj   +1 more source

Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations

IEEE Journal of the Electron Devices Society, 2017
In this paper, the type, activation energy (Ea) and cross section (σn) of the GaN buffer traps existing in the AlGaN/GaN high-electron mobility transistors are investigated through low frequency (LF) S-parameters measurements.
Nandha Kumar Subramani, Julien Couvidat, Ahmad Al Hajjar, Jean-Christophe Nallatamby, Raphael Sommet, Raymond Quere   +5 more
doaj   +1 more source