Results 91 to 100 of about 2,850,351 (204)

MOOSE: A Physically Based Compact DC Model of SOI LDMOSFETs for Analogue Circuit Simulation

, 2004
In this paper, we present a compact model for silicon-on-insulator (SOI) laterally double diffused (LD) MOSFETs. The model is complete insofar as it uses no subcircuits, and is intended to predict device operation in all regions of bias.
Swanenberg, M., Mistry, K., Redman-White, W., Benson, J., D'Halleweyn, N.V.T.   +4 more
core   +1 more source

Generating Predictive Models for Emerging Semiconductor Devices

IEEE Journal of the Electron Devices Society
Circuit design requires fast and scalable models which are compatible to modern electronic design automation tools. For this task typically analytical compact models are preferred.
Maximilian Reuter, Andreas Kramer, Dakyung Lee, Jens Trommer, Niladri Bhattacharjee, Giulio Galderisi, Thomas Mikolajick, Klaus Hofmann   +7 more
doaj   +1 more source

TCAD simulation of stitching for passive CMOS strip detectors

Journal of Instrumentation
Abstract Most of the tracking detectors for high energy particle experiments are filled with silicon detectors since they are radiation hard, they can give very small spatial resolution and they can take advantage of the silicon electronics foundries' developments and production lines.
M. Baselga, J-H. Arling, N. Davis, J. Dingfelder, I.M. Gregor, M. Hauser, F. Hügging, K. Jakobs, M. Karagounis, R. Koppenhöfer, K. Kröninger, F. Lex, U. Parzefall, B. Sari, S. Spannagel, D. Sperlich, J. Weingarten, I. Zatocilova   +17 more
openaire   +3 more sources

TCAD simulation of a proposed 3D CdZnTe detector

The Journal of Engineering, 2017
Cadmium zinc telluride (CdZnTe) detectors are potential replacements for traditional room temperature detectors, such as silicon (Si), in many applications. CdZnTe has been considered as a promising semiconductor material for hard X‐ray and ‐ray detection because the stopping power of CdZnTe
Abdelhady A. Ellakany, Mohamed Abouelatta, Ahmed Shaker, Gihan T. Sayah, Mohammed El‐Banna   +4 more
openaire   +1 more source

Designs and electric properties studied of 3D trench electrode Si detector with adjustable central collection electrode

AIP Advances, 2018
In order to improve the radiation resistance of semiconductor detector, 3D trench electrode Si detector structures have been proposed by the Brookhaven National Laboratory (BNL) in 2009.
Chuan Liao, Manwen Liu, Ya Zhang, Jun Zhao, Zheng Li   +4 more
doaj   +1 more source

Universal Charge-Conserving TFET SPICE Model Incorporating Gate Current and Noise

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2016
An analytical compact model for tunnel field-effect transistor (TFET) circuit simulation is extended by adding a gate tunnel current model, a charge-based capacitor model, and a noise model. The equation set is broadly applicable across materials systems
Hao Lu, Wenjun Li, Yeqing Lu, Patrick Fay, Trond Ytterdal, Alan Seabaugh   +5 more
doaj   +1 more source

TCAD simulations of humidity-induced breakdown of silicon sensors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
The breakdown voltage of silicon sensors is known to be affected by the ambient humidity. To understand the sensor’s humidity sensitivity, Synopsys TCAD was used to simulate n-in-p sensors for different effective relative humidities. Photon emission of hot electrons was imaged with a microscope to locate breakdown in the edge-region of the sensor.
Ninca, Ilona Stefana, Bloch, I., Brüers, B., Fadeyev, V., Fernandez-Tejero, J., Jessiman, C., Keller, J., Klein, C. T., Koffas, T., Lacker, H. M., Li, P., Scharf, C., Staats, E., Ullan, M., Unno, Y.   +14 more
openaire   +4 more sources

A Novel 3D TCAD simulation of a Thermoelectric Module configured for Thermoelectric Power Generation [PDF]

, 2011
This paper documents the novel design, modelling and 3D simulation of a single thermoelectric couple using the Technology Computer Aided Design (TCAD) semiconductor simulation software package by Synopsys. Preliminary simulation results are presented for
Taylor, Ian, Shammas, Noel, Grainger, Stephen, Gould, Chris   +3 more
core   +2 more sources

Compact Modeling of 3D NAND Flash Memory With Ferroelectric Characteristics: A Comparative Analysis of O/N/O and O/N/F Structures

IEEE Journal of the Electron Devices Society
This study presents a compact model for three-dimensional (3D) NAND flash memory that incorporates ferroelectric properties to enable accurate circuit-level simulations.
Sunghyun Woo, Jihwan Lee, Gyunseok Ryu, Myounggon Kang   +3 more
doaj   +1 more source

A HV silicon vertical JFET: TCAD simulations

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2019
Abstract In the future ATLAS Inner Tracker detector (ITk), several silicon strip modules will be biased by a single High-Voltage (HV) line, so that a switch between each strip sensor and the HV line is required to disconnect faulty sensors. Such a switch must satisfy strict requirements, such as being radiation hard, being able to sustain high ...
Gabriele Giacomini, Wei Chen, David Lynn
openaire   +2 more sources