Results 91 to 100 of about 5,000 (223)

Thermoelectric power generation: Properties, application and novel TCAD simulation [PDF]

, 2011
This paper documents the testing of commercial thermoelectric modules when they are connected for thermoelectric power generation, the design of a thermoelectric energy harvesting system, and the novel 3D TCAD simulation of a thermoelectric couple when ...
GRAINGER, Stephen, Shammas, N. Y. A., SHAMMAS, Noel, GOULD, Christopher, TAYLOR, Ian, Taylor, I., Gould, Chris   +6 more
core  

DC Characteristics Optimization of a Double G-Shield 50 V RF LDMOS

Advances in Condensed Matter Physics, 2015
An N-type 50 V RF LDMOS with a RESURF (reduced surface field) structure of dual field plates (grounded shield, or G-shield) was investigated. The effect of the two field plates and N-drift region, including the junction depth and dopant concentration, on
Xiangming Xu, Pengliang Ci, Xiaoyu Tang, Jing Shi, Zhengliang Zhou, Jingfeng Huang, Peng-Fei Wang, David Wei Zhang   +7 more
doaj   +1 more source

Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations

IEEE Journal of the Electron Devices Society, 2017
In this paper, the type, activation energy (Ea) and cross section (σn) of the GaN buffer traps existing in the AlGaN/GaN high-electron mobility transistors are investigated through low frequency (LF) S-parameters measurements.
Nandha Kumar Subramani, Julien Couvidat, Ahmad Al Hajjar, Jean-Christophe Nallatamby, Raphael Sommet, Raymond Quere   +5 more
doaj   +1 more source

Generating Predictive Models for Emerging Semiconductor Devices

IEEE Journal of the Electron Devices Society
Circuit design requires fast and scalable models which are compatible to modern electronic design automation tools. For this task typically analytical compact models are preferred.
Maximilian Reuter, Andreas Kramer, Dakyung Lee, Jens Trommer, Niladri Bhattacharjee, Giulio Galderisi, Thomas Mikolajick, Klaus Hofmann   +7 more
doaj   +1 more source

Universal Charge-Conserving TFET SPICE Model Incorporating Gate Current and Noise

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2016
An analytical compact model for tunnel field-effect transistor (TFET) circuit simulation is extended by adding a gate tunnel current model, a charge-based capacitor model, and a noise model. The equation set is broadly applicable across materials systems
Hao Lu, Wenjun Li, Yeqing Lu, Patrick Fay, Trond Ytterdal, Alan Seabaugh   +5 more
doaj   +1 more source

TCAD simulation of a proposed 3D CdZnTe detector

The Journal of Engineering, 2017
Cadmium zinc telluride (CdZnTe) detectors are potential replacements for traditional room temperature detectors, such as silicon (Si), in many applications. CdZnTe has been considered as a promising semiconductor material for hard X‐ray and ‐ray detection because the stopping power of CdZnTe
Abdelhady A. Ellakany, Mohamed Abouelatta, Ahmed Shaker, Gihan T. Sayah, Mohammed El‐Banna   +4 more
openaire   +1 more source

Total Ionizing Dose TCAD simulation of 400 nm SiO2 capacitor [PDF]

Synopsys Sentaurus TCAD simulation of 400 nm SiO2 capacitor under gamma irradiation. Dataset supports: Chatzikyriakou, Eleni et al (2017) A systematic method for simulating total ionizing dose effects using the finite elements method.
Chatzikyriakou, Eleni, De Groot, Cornelis   +1 more
core   +1 more source

Compact Modeling of 3D NAND Flash Memory With Ferroelectric Characteristics: A Comparative Analysis of O/N/O and O/N/F Structures

IEEE Journal of the Electron Devices Society
This study presents a compact model for three-dimensional (3D) NAND flash memory that incorporates ferroelectric properties to enable accurate circuit-level simulations.
Sunghyun Woo, Jihwan Lee, Gyunseok Ryu, Myounggon Kang   +3 more
doaj   +1 more source

Designs and electric properties studied of 3D trench electrode Si detector with adjustable central collection electrode

AIP Advances, 2018
In order to improve the radiation resistance of semiconductor detector, 3D trench electrode Si detector structures have been proposed by the Brookhaven National Laboratory (BNL) in 2009.
Chuan Liao, Manwen Liu, Ya Zhang, Jun Zhao, Zheng Li   +4 more
doaj   +1 more source

TCAD simulations of humidity-induced breakdown of silicon sensors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
The breakdown voltage of silicon sensors is known to be affected by the ambient humidity. To understand the sensor’s humidity sensitivity, Synopsys TCAD was used to simulate n-in-p sensors for different effective relative humidities. Photon emission of hot electrons was imaged with a microscope to locate breakdown in the edge-region of the sensor.
Ninca, Ilona Stefana, Bloch, I., Brüers, B., Fadeyev, V., Fernandez-Tejero, J., Jessiman, C., Keller, J., Klein, C. T., Koffas, T., Lacker, H. M., Li, P., Scharf, C., Staats, E., Ullan, M., Unno, Y.   +14 more
openaire   +4 more sources