Results 151 to 160 of about 11,742 (216)

Nanogate ferroelectric transistors with ultralow operation voltage of 0.6 V. [PDF]

Sci Adv
Meng D, Ma X, Shen Z, Xu L, Peng LM, Qiu C.   +5 more
europepmc   +1 more source

Impact of drain and source engineering on dual metal InAs-GaSb VTFETs with high-K gate stack design. [PDF]

Sci Rep
Saravanan M, Parthasarathy E, Rahi SB, Natarajan R.   +3 more
europepmc   +1 more source

Advances in High-Voltage Power Electronics Using Ga₂O₃-Based HEMT: Modeling. [PDF]

Materials (Basel)
Alhasani R, Hussain H, Alkhamisah MA, Hiazaa A, Alharbi A.   +4 more
europepmc   +1 more source

Assessment and Optimization of 2T Perovskite/CIGS Tandems via Data-Driven and Optoelectronic Modelling. [PDF]

Nanomicro Lett
Giliberti G, Farias-Basulto G, Jäger K, Mehlhop T, Kaufmann CA, Di Carlo A.   +5 more
europepmc   +1 more source

Characteristics Prediction and Optimization of GaN CAVET Using a Novel Physics-Guided Machine Learning Method. [PDF]

Micromachines (Basel)
Wu W, Wang J, Su J, Chen Z, Yu Z.
europepmc   +1 more source

The Modeling of a Single-Electron Bipolar Avalanche Transistor in 150 nm CMOS. [PDF]

Sensors (Basel)
Boughedda A, Pancheri L, Parmesan L, Gasparini L, Quarta G, Perenzoni D, Perenzoni M.   +6 more
europepmc   +1 more source

Silvaco TCAD modeling, optical simulation, and optimization for high-current perovskite and u-CIGS tandem solar cells with efficiencies above 30. [PDF]

Sci Rep
Mosalanezhad R, Shayesteh MR, Pourahmadi M.   +2 more
europepmc   +1 more source

Design and performance analysis of a vertically stacked gate-all-around nanosheet FET with embedded nanocavity for biosensing applications. [PDF]

Sci Rep
Prasanna RL, Karumuri SR, Sreenivasulu VB, Kondaveeti GS.   +3 more
europepmc   +1 more source

Device to Circuit Co-Design Utilizing High-Performance PEALD Indium-Gallium-Zinc Oxide Thin-Film Transistor Enabling Technology Node Scaling in Monolithic 3D Systems. [PDF]

Adv Sci (Weinh)
Wang W, Zhang T, Yuan Z, Peng H, Lan J, Li Z, Wu Y, Feng X, Lin L, Zhou F, Zhang P, Li Y.   +11 more
europepmc   +1 more source

Demonstration of accurate ID-VG characteristics modeling in SiC mosfets using separated artificial neural networks with small training dataset. [PDF]

Sci Rep
Chankla M, Chen BR, Singh SK, Chauhan YS, Lee WJ, Chen NY, Kanjanachuchai S, Wu TL.   +7 more
europepmc   +1 more source