Results 161 to 170 of about 2,850,351 (204)

Integration of factory simulation with TCAD process and device simulation within a total TCAD approach to DFM

SPIE Proceedings, 1999
This paper describes the integration of TCAD and factory simulation software tools to help facilitate their adoption as an integral part of a DFM (Design for Manufacturability) strategy. Automated exchange of data enables the impact on manufacturing operations to be more readily considered at an earlier stage during the process design procedure.
Vidar K. Nilsen, Anthony J. Walton
openaire   +1 more source

TFET simulation using Matlab and sentaraus TCAD

2016 International Conference on Advances in Computing, Communications and Informatics (ICACCI), 2016
TFET (Tunnel field effect transistor) is widely used in low voltage operating electronic devices because of the ability to achieve a subthreshold swing lower than 60mV/decade. Lower subthreshold swing is also a root cause for the low power and the high speed behavior of the device. Conduction of current in TFET is due to band to band tunneling.
Rockey Bhardwaj, Gurinderpal Singh
openaire   +2 more sources

Hierarchical TCAD device simulation of FinFETs

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2015
A framework for FinFET design studies is presented. Our physics-based modeling approach allows to accurately capture the effects of channel cross-section, orientation and strain as well as contact resistance - for the first time all in one tool.
M. Karner, Z. Stanojevic, C. Kernstock, H.W. Cheng-Karner, O. Baumgartner   +4 more
openaire   +1 more source

3D TCAD simulation of the pixel for TOF

Proceedings of SPIE, 2013
This paper presents the design and the simulation of pixel for real time three dimensional (3D) measurements based on Time of Flight (TOF) technique. The pixel is designed to detect the time delay between transmitted and reflected light. Based on 4T active pixel, A TXD transfer gate is added to realize TOF function.
Yangfan Zhou
exaly   +2 more sources

MOSFET simulation - TCAD tools/packages

2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676), 2004
Industry-standard TCAD software packages are widely used by semiconductor companies to optimise processes and devices in integrated circuits fabrication. After process and device simulation one can go ahead with circuit simulation using Spice. This paper focuses on the matching of these program packages in the area of parameter and characteristics ...
I. Campian, O.-G. Profirescu, A. Ungureanu, F. Babarada, E. Lakatos, C. Amza   +5 more
openaire   +1 more source

TCAD simulation of photodetector spectral response

Proceedings IEEE/WIC International Conference on Web Intelligence (WI 2003), 2004
In this paper, the spectral responsivity of a photodetector is determined by extracting optical parameters (refractive index and extinction coefficients) from the reflectivity measurement data and by treating the surface recombination velocity as a free parameter.
B. Jacob, M. Klemenc, C. Petit, A. Witzig, W. Fichtner   +4 more
openaire   +1 more source

Numerical Simulation Of Set Using Tcad

i-manager's Journal on Electronics Engineering, 2021
The ability to control the electron flow of a Metal-Oxide-Semiconductor Field-Effect Transistor MOSFET decreases due to a quantum mechanical effect as the size decreases below 50 nm. To meet this challenge, a new area of device research is needed. One such area is devices based on tunneling phenomena, called single-electron devices.
openaire   +1 more source

Electrical TCAD Simulations and Modeling in Germanium

2013
Chapter 4 extends a TCAD device simulator to allow electrical simulations of scaled Ge MOSFETs.
Geert Hellings, Kristin De Meyer
openaire   +1 more source

Advanced Theory of TCAD Device Simulation

2011
This chapter reviews the basic theories of device simulation within the framework of TCAD. Figure 3.1 shows a practical design of a device simulator of 3D TCAD capability with various modules. One may regard the drift-diffusion (DD) equation module as central building block of a 3D TCAD device simulator.
Simon Li, Yue Fu
openaire   +1 more source

Introduction of Synopsys Sentaurus TCAD Simulation

2017
Technology computer-aided design (TCAD) refers to the use of computer simulations to develop and optimize semiconductor processing technologies and devices.
Yung-Chun Wu, Yi-Ruei Jhan
openaire   +1 more source