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Polarization Engineered Design for Normally-Off, Higher Drain Current and Higher Breakdown Voltage Gan-Based MOS-HEMT. [PDF]
Omar A, Loan SA.
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Enabling scalable ferroelectric-based future generation vertical NAND flash with bonding-friendly architecture: strategies for erase and disturb optimization. [PDF]
Song I, Kim J, Lee S, Myeong I.
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Total Ionizing Dose Effect Simulation Modeling and Analysis for a DCAP Power Chip. [PDF]
Liao X +10 more
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Traumatic carotid artery dissection and occlusion caused by repetitive mechanical stress to the neck while carrying a mikoshi (portable shrine): illustrative case. [PDF]
Sato A +8 more
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Design and Optimization of AlGaN/AlN/GaN L‑SBD for Radiofrequency Applications. [PDF]
Dudekula S +5 more
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Simulation workshop on HV/HR-CMOS TCAD and Geant4 simulations
Casse, G., Peric, I.
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TCAD Device Simulation With Graph Neural Network
IEEE Electron Device Letters, 2023Wonik Jang +4 more
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