Results 171 to 180 of about 5,000 (223)

Extraction of Electron and Hole Drift Velocities in Thin 4H-SiC PIN Detectors Using High-Frequency Readout Electronics. [PDF]

open access: yesSensors (Basel)
Gsponer A   +7 more
europepmc   +1 more source

TCAD simulation of thermally evaporated germanium [PDF]

open access: yesphysica status solidi c, 2013
AbstractEpitaxial growth of germanium on silicon produces large misfit and threading dislocation densities which dramatically affect electronic properties of Ge. For this reason, TCAD standard models and parameters, optimized for bulk Ge, fail when applied to Ge epilayers.
DE IACOVO, ANDREA   +3 more
openaire   +2 more sources

Integrated Power Devices and TCAD Simulation [PDF]

open access: yes, 2014
From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics ...
Fu, Yue   +3 more
openaire   +3 more sources

Simulation of nano-biosensors based on conventional TCAD [PDF]

open access: yes2013 14th International Conference on Ultimate Integration on Silicon (ULIS), 2013
We present a simple methodology to include the modeling of an electrolyte into a TCAD simulator exploiting the similarity between the transport equations for electrons and holes in semiconductors and the ones for charged ions in a solution. Applications to the simulation of pH-meters and biosensors are reported as examples.
PALESTRI, Pierpaolo   +5 more
openaire   +2 more sources

TCAD Device Simulation With Graph Neural Network

IEEE Electron Device Letters, 2023
Wonik Jang   +2 more
exaly   +2 more sources

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