Results 171 to 180 of about 2,850,351 (204)

Methodology for predictive calibration of TCAD simulators

SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest, 2002
This paper presents an original methodology for calibrating Technology Computer-Aided Design (TCAD) simulators. This approach associates physical analysis of models, statistical analysis of data, and systematic use of Design of Experiments. This new concept, inspired by the Taguchi's methodology, allows to minimise the difference between simulations ...
G. Le Carval, P. Scheiblin, D. Poncet, P. Rivallin   +3 more
openaire   +1 more source

Setting Up a 3D TCAD Simulation

2011
In order to perform a 3D TCAD simulation, we first need the mask layout for all the process steps. The mask layout can be designed in a variety of software including drafting tools like Autodesk AutoCAD® and specialized EDA tools like Cadence Virtuoso® and Tanner L-Edit®.
Simon Li, Yue Fu
openaire   +1 more source

MODELING AND SIMULATION OF CONVERTER SYSTEMS PART II: SIMULATION PACKAGE TCAD

Journal of Circuits, Systems and Computers, 1995
The methods, models and techniques — presented in the companion paper — have been used as a basis for the evaluation of popular general-purpose electrical circuit simulation programs, in particular, their applicability in the analysis of power electronic circuits.
Romuald Szczesny, Mieczyslaw Ronkowski
openaire   +2 more sources

Advanced Theory of TCAD Process Simulation

2011
A key simulation task in TCAD process simulation is to solve the diffusion equations over the simulation mesh to predict the impurity doping profile after thermal processing. In 3D TCAD, the simulation grid size is large and diffusion is often the most time-consuming simulation procedure.
Simon Li, Yue Fu
openaire   +1 more source

An Accurate TCAD-Based Model for ISFET Simulation

IEEE Transactions on Electron Devices, 2018
In this paper, a new model is successfully introduced to describe an ion-sensitive field-effect transistor in a TCAD tool. To model this device accurately, the model should evaluate surface charge density behavior of electrolyte and insulator interface as well as ion concentration according to different pH values.
Ehsan Mohammadi, Negin Manavizadeh
openaire   +1 more source

Simulation of nano-biosensors based on conventional TCAD

2013 14th International Conference on Ultimate Integration on Silicon (ULIS), 2013
We present a simple methodology to include the modeling of an electrolyte into a TCAD simulator exploiting the similarity between the transport equations for electrons and holes in semiconductors and the ones for charged ions in a solution. Applications to the simulation of pH-meters and biosensors are reported as examples.
PALESTRI, Pierpaolo, Sette R, PITTINO, Federico, Saccon F, ESSENI, David, SELMI, Luca   +5 more
openaire   +1 more source

Circuit model parameter generation with TCAD simulation

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004., 2005
In the case of the Hash memory, various kinds of transistors and the wide range of operation voltage are necessary to achieve the read/write operations. Therefore, the characteristics of transistors are measured in the silicon for the circuit design, and the test vehicle run must he processed.
null Jun-Ha Lee, null Hoong-Joo Lee
openaire   +1 more source

3D TCAD Simulation for CMOS Nanoeletronic Devices

2018
Yung-Chun Wu, Yi-Ruei Jhan
exaly   +2 more sources

An integrated TCAD system for VLSI reliability simulation

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095), 2005
SANTA is a useful environment to both VLSI technology developer and circuit designers who are not familiar with complex TCAD tools. Through the ESD protection application, we find that a well selected device width and length can reduce process steps without loosing performance threshold.
null Jin-Kyu Park, null Tae-Soo Park, null Sang-Hoon Lee, null Chang-Hoon Choi, null Kyung-Ho Kim   +4 more
openaire   +1 more source

Three-dimensional TCAD Process and Device Simulations

2006 16th Biennial University/Government/Industry Microelectronics Symposium, 2006
Shrinking feature sizes, novel device designs as well as stress engineering increase the need for three- dimensional process and device simulations. We present several application examples for full 3D process and device simulations using Sentaurus TCAD, including a 3D NMOSFET with shallow trench isolations (STI), a PMOSFET device with SiGe pockets for ...
I. Avci, P. Balasingam, K. El Sayed, J. Gharib, M.D. Johnson, K. Kells, G. Kiralyfalvi, V. Koltyzhenkov, A. Kucherov, E. Lyumkis, O. Penzin, B. Polsky, V. Rao, S.D. Simeonov, N. Strecker, Z. Tan, L. Villablanca, W. Fichtner   +17 more
openaire   +1 more source