Results 171 to 180 of about 11,742 (216)

MOSFET simulation - TCAD tools/packages

2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676), 2004
Industry-standard TCAD software packages are widely used by semiconductor companies to optimise processes and devices in integrated circuits fabrication. After process and device simulation one can go ahead with circuit simulation using Spice. This paper focuses on the matching of these program packages in the area of parameter and characteristics ...
I. Campian, O.-G. Profirescu, A. Ungureanu, F. Babarada, E. Lakatos, C. Amza   +5 more
openaire   +1 more source

TCAD simulation of photodetector spectral response

Proceedings IEEE/WIC International Conference on Web Intelligence (WI 2003), 2004
In this paper, the spectral responsivity of a photodetector is determined by extracting optical parameters (refractive index and extinction coefficients) from the reflectivity measurement data and by treating the surface recombination velocity as a free parameter.
B. Jacob, M. Klemenc, C. Petit, A. Witzig, W. Fichtner   +4 more
openaire   +1 more source

TCAD simulation of thermally evaporated germanium

physica status solidi c, 2013
AbstractEpitaxial growth of germanium on silicon produces large misfit and threading dislocation densities which dramatically affect electronic properties of Ge. For this reason, TCAD standard models and parameters, optimized for bulk Ge, fail when applied to Ge epilayers.
DE IACOVO, ANDREA, Sorianello V., COLACE, Lorenzo, ASSANTO, GAETANO   +3 more
openaire   +1 more source

Hierarchical TCAD device simulation of FinFETs

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2015
A framework for FinFET design studies is presented. Our physics-based modeling approach allows to accurately capture the effects of channel cross-section, orientation and strain as well as contact resistance - for the first time all in one tool.
M. Karner, Z. Stanojevic, C. Kernstock, H.W. Cheng-Karner, O. Baumgartner   +4 more
openaire   +1 more source

Advanced Theory of TCAD Process Simulation

2011
A key simulation task in TCAD process simulation is to solve the diffusion equations over the simulation mesh to predict the impurity doping profile after thermal processing. In 3D TCAD, the simulation grid size is large and diffusion is often the most time-consuming simulation procedure.
Simon Li, Yue Fu
openaire   +1 more source

Three-dimensional TCAD Process and Device Simulations

2006 16th Biennial University/Government/Industry Microelectronics Symposium, 2006
Shrinking feature sizes, novel device designs as well as stress engineering increase the need for three- dimensional process and device simulations. We present several application examples for full 3D process and device simulations using Sentaurus TCAD, including a 3D NMOSFET with shallow trench isolations (STI), a PMOSFET device with SiGe pockets for ...
I. Avci, P. Balasingam, K. El Sayed, J. Gharib, M.D. Johnson, K. Kells, G. Kiralyfalvi, V. Koltyzhenkov, A. Kucherov, E. Lyumkis, O. Penzin, B. Polsky, V. Rao, S.D. Simeonov, N. Strecker, Z. Tan, L. Villablanca, W. Fichtner   +17 more
openaire   +1 more source

Circuit model parameter generation with TCAD simulation

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004., 2005
In the case of the Hash memory, various kinds of transistors and the wide range of operation voltage are necessary to achieve the read/write operations. Therefore, the characteristics of transistors are measured in the silicon for the circuit design, and the test vehicle run must he processed.
null Jun-Ha Lee, null Hoong-Joo Lee
openaire   +1 more source

Advanced Theory of TCAD Device Simulation

2011
This chapter reviews the basic theories of device simulation within the framework of TCAD. Figure 3.1 shows a practical design of a device simulator of 3D TCAD capability with various modules. One may regard the drift-diffusion (DD) equation module as central building block of a 3D TCAD device simulator.
Simon Li, Yue Fu
openaire   +1 more source

Expanding TCAD simulations from grid to cloud

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2015
In this work, the distribution, execution and performance of TCAD simulations on grid and cloud systems are investigated. A module for distributed computing which can uniformly interface both grid and cloud computing systems has been implemented within GTS Framework.
H. Demel, Z. Stanojevic, M. Karner, G. Rzepa, T. Grasser   +4 more
openaire   +1 more source

Setting Up a 3D TCAD Simulation

2011
In order to perform a 3D TCAD simulation, we first need the mask layout for all the process steps. The mask layout can be designed in a variety of software including drafting tools like Autodesk AutoCAD® and specialized EDA tools like Cadence Virtuoso® and Tanner L-Edit®.
Simon Li, Yue Fu
openaire   +1 more source