Results 191 to 200 of about 5,000 (223)

Electrical TCAD Simulations and Modeling in Germanium

2013
Chapter 4 extends a TCAD device simulator to allow electrical simulations of scaled Ge MOSFETs.
Geert Hellings, Kristin De Meyer
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MODELING AND SIMULATION OF CONVERTER SYSTEMS PART II: SIMULATION PACKAGE TCAD

Journal of Circuits, Systems and Computers, 1995
The methods, models and techniques — presented in the companion paper — have been used as a basis for the evaluation of popular general-purpose electrical circuit simulation programs, in particular, their applicability in the analysis of power electronic circuits.
Romuald Szczesny, Mieczyslaw Ronkowski
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Methodology for predictive calibration of TCAD simulators

SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest, 2002
This paper presents an original methodology for calibrating Technology Computer-Aided Design (TCAD) simulators. This approach associates physical analysis of models, statistical analysis of data, and systematic use of Design of Experiments. This new concept, inspired by the Taguchi's methodology, allows to minimise the difference between simulations ...
G. Le Carval, P. Scheiblin, D. Poncet, P. Rivallin   +3 more
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Investigation of ESD second breakdown TCAD simulation

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, 2010
This paper presents the methodology to obtain the snapback curves and second breakdown point of an ESD stressed device through TCAD simulation. This method allows an excellent ESD simulation convergence and then good ESD prediction with a significantly reduced computation time. One 0.5um CMOS technology has been simulated for experimental support.
Cai Xiaowu, Yan Beiping, Han Xiaoyong
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Setting Up a 3D TCAD Simulation

2011
In order to perform a 3D TCAD simulation, we first need the mask layout for all the process steps. The mask layout can be designed in a variety of software including drafting tools like Autodesk AutoCAD® and specialized EDA tools like Cadence Virtuoso® and Tanner L-Edit®.
Simon Li, Yue Fu
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Circuit model parameter generation with TCAD simulation

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004., 2005
In the case of the Hash memory, various kinds of transistors and the wide range of operation voltage are necessary to achieve the read/write operations. Therefore, the characteristics of transistors are measured in the silicon for the circuit design, and the test vehicle run must he processed.
null Jun-Ha Lee, null Hoong-Joo Lee
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Three-dimensional TCAD Process and Device Simulations

2006 16th Biennial University/Government/Industry Microelectronics Symposium, 2006
Shrinking feature sizes, novel device designs as well as stress engineering increase the need for three- dimensional process and device simulations. We present several application examples for full 3D process and device simulations using Sentaurus TCAD, including a 3D NMOSFET with shallow trench isolations (STI), a PMOSFET device with SiGe pockets for ...
I. Avci, P. Balasingam, K. El Sayed, J. Gharib, M.D. Johnson, K. Kells, G. Kiralyfalvi, V. Koltyzhenkov, A. Kucherov, E. Lyumkis, O. Penzin, B. Polsky, V. Rao, S.D. Simeonov, N. Strecker, Z. Tan, L. Villablanca, W. Fichtner   +17 more
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Expanding TCAD simulations from grid to cloud

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2015
In this work, the distribution, execution and performance of TCAD simulations on grid and cloud systems are investigated. A module for distributed computing which can uniformly interface both grid and cloud computing systems has been implemented within GTS Framework.
H. Demel, Z. Stanojevic, M. Karner, G. Rzepa, T. Grasser   +4 more
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TCAD simulation of the nitrogen effect by NO-nitrided oxide

ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361), 2003
Anomalous short channel characteristics in NO-nitrided gate oxide device were investigated in this paper. In NMOS, the NO-nitrided gate oxide device has less reverse short-channel effect with lower threshold voltage than pure gate oxide device. On the other hand, the opposite case is seen for PMOS. These characteristics are attributed to the boron dose
null Kyong-Ha Lee, null Jun-Seok Lee, null Hyun-Cheol Kim, null Jeong-Mo Hwang   +3 more
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An Accurate TCAD-Based Model for ISFET Simulation

IEEE Transactions on Electron Devices, 2018
In this paper, a new model is successfully introduced to describe an ion-sensitive field-effect transistor in a TCAD tool. To model this device accurately, the model should evaluate surface charge density behavior of electrolyte and insulator interface as well as ion concentration according to different pH values.
Ehsan Mohammadi, Negin Manavizadeh
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