Results 181 to 190 of about 2,850,351 (204)

TCAD simulation of the nitrogen effect by NO-nitrided oxide

ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361), 2003
Anomalous short channel characteristics in NO-nitrided gate oxide device were investigated in this paper. In NMOS, the NO-nitrided gate oxide device has less reverse short-channel effect with lower threshold voltage than pure gate oxide device. On the other hand, the opposite case is seen for PMOS. These characteristics are attributed to the boron dose
null Kyong-Ha Lee, null Jun-Seok Lee, null Hyun-Cheol Kim, null Jeong-Mo Hwang   +3 more
openaire   +1 more source

Switching Simulation of TIGBT in TCAD Mixed-Mode

2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), 2018
This work describes calibration of both turn-off and turn-on switching losses of I200V UltraFS Trench Insulated Gate Bipolar Transistor (TIGBT) by using equivalent circuit of Double Pulse Tester (DPT) in Synopsys TCAD mixed-mode simulation. The model contains main parasitic elements which are necessary for model accuracy especially for fast transient ...
Ladislav Seliga, Radim Pechal, Adam Kozelsky, Tomas Bordovsky   +3 more
openaire   +1 more source

TCAD Simulations and Measurements of a-Si:H devices for particle detection

2025 10th International Workshop on Advances in Sensors and Interfaces (IWASI)
In this work, we presented the development of a simulation methodology for a-Si:H devices in a commercial state-of-The-Art simulation environment. Hydrogenated amorphous silicon (a-Si:H) has emerged as an attractive material for particle detectors, driven by its high bandgap, which translates to minimal leakage current, and the potential for cost ...
Passeri, Daniele, Morozzi, Arianna, Servoli, Leonello, Menichelli, Mauro, Pedio, Maddalena, Caputo, Domenico, Lovecchio, Nicola, De Cesare, Giampiero, Petasecca, Marco   +8 more
openaire   +3 more sources

Simulation of deposition-topography granular distortion for TCAD

Modelling and Simulation in Materials Science and Engineering, 1998
A new deposition simulator for technology computer aided design (TCAD) is presented in this paper. The solution, on a cellular automaton lattice, of the equations that describe the deposition process has enabled the proposed simulator to handle the complicated boundary and initial conditions imposed by granular defects.
I Karafyllidis, N Georgoulas, P I Hagouel, A Thanailakis   +3 more
openaire   +1 more source

Device Simulation Process on TCAD

2023
Abhay Pratap Singh, R.K. Baghel, Sukeshni Tirkey   +2 more
openaire   +1 more source

Simulation of BioGFET sensors using TCAD

Solid-State Electronics, 2023
Elsa Fuente-Zapico, Paula Martínez-Mazon, Jose Carlos Galdón, Carlos Márquez, Carlos Navarro, Luca Donetti, Carlos Sampedro, Francisco Gamiz   +7 more
openaire   +1 more source

A unified model for TCAD simulation of the charge generated in semiconductors by low-energy alpha particles and protons

Microelectronics Reliability, 2022
M Ciappa
exaly  

Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation

Electronics (Switzerland), 2021
Janardhan Vallivedu, Chel-Jong Choi, Kyu‐Hwan Shim   +2 more
exaly  

Study of parasitic oscillation of a multi-chip SiC MOSFET circuit based on a signal flow graph model by TCAD simulation

Solid-State Electronics, 2021
Ichiro Omura
exaly  

Effects of Different Factors on Single Event Effects Introduced by Heavy Ions in SiGe Heterojunction Bipolar Transistor: A TCAD Simulation

Electronics (Switzerland), 2023
Xiaoping Ouyang, Zheng Zhang
exaly