Results 41 to 50 of about 2,850,351 (204)

Off-State Performance Characterization of an AlGaN/GaN Device via Artificial Neural Networks

Micromachines, 2022
Due to the complexity of the 2D coupling effects in AlGaN/GaN HEMTs, the characterization of a device’s off-state performance remains the main obstacle to exploring the device’s breakdown characteristics. To predict the off-state performance of AlGaN/GaN
Jing Chen, Yufeng Guo, Jun Zhang, Jianhua Liu, Qing Yao, Jiafei Yao, Maolin Zhang, Man Li   +7 more
doaj   +1 more source

TCAD device modelling and simulation of wide bandgap power semiconductors [PDF]

, 2018
Technology Computer Aided Design (TCAD) is essential for devices technology development, including wide bandgap power semiconductors. However. most TCAD tools were originally developed for silicon and their performance and accuracy for wide band gap ...
Samuel Perkins, Lophitis, Neo, Antoniou, Marina, Arvanitopoulos, Anastasios, Neophytos Lophitis, Marina Antoniou, Anastasios Arvanitopoulos, Perkins, Samuel, Lophitis, Neophytos   +8 more
core   +1 more source

A Novel 3D TCAD Simulation of a Thermoelectric Couple configured for Thermoelectric Power Generation [PDF]

, 2011
This paper documents the novel design, modelling and 3D simulation of a single thermoelectric couple using the Technology Computer Aided Design (TCAD)semiconductor simulation software package by Synopsys.Preliminary simulation results are presented for ...
GRAINGER, Stephen, SHAMMAS, Noel, GOULD, Christopher, TAYLOR, Ian   +3 more
core   +6 more sources

Amorphous IGZO, Crystalline IGO, Amorphous IGZO Triple Active Layer With 2D Electron Gas at Both Interfaces for High Performance TFTs

Advanced Materials Technologies, EarlyView.
The dual‐gate coplanar a‐IGZO/C‐IGO/a‐IGZO TFT is investigated, exhibiting a high filed‐effect mobility of 53.81 cm2 V−1s−1 with excellent stability. The amorphous IGZO layer provides smooth surface, which carrier scattering and high‐quality interface between gate insulator and active layer.
Solbee Lee, Taebin Lim, Seungho Lee, Sunaina Priyadarshi, Jin Jang   +4 more
wiley   +1 more source

Wake‐Up and Fatigue under Electrical Cycling in HfO2‐Based Ferroelectrics: Mechanisms and Strategies toward Reliable Devices

Advanced Science, EarlyView.
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim, Shinhyeong Lee, Hyojun Choi, Minseung Park, Hyunah Cho, Min Hyuk Park, Yunseok Kim   +6 more
wiley   +1 more source

Performance Evaluation of MISISFET- TCAD Simulation

International Journal of Computer Applications, 2012
A novel device n-MISISFET with a "dielectric stack" instead of the single insulator of n-MOSFET has been described and its characteristics has been obtained in this paper. The desired variation of threshold voltage is obtained with biasing for the novel n-MISISFET for various substrate doping concentrations, the effect temperature variation on various ...
Rajeevan Chandel, Gargi Khanna, Tarun Chaudhary   +2 more
openaire   +1 more source

TCAD-Based Capacitance Analysis for Identifying Longitudinally Localized Oxide-Trapped Charge in SOI FinFETS

East European Journal of Physics
This study examines the effect of the spatial position of locally trapped oxide charge on the gate-to-source and gate-to-drain capacitances of an SOI FinFET using three-dimensional TCAD Sentaurus simulations.
Mirzabaxhrom Foziljonov, Biloliddin М. Ergashev, Nuritdin Y. Yunusaliyev, Masudjon Norbutayev, Kumush Orinboyeva   +4 more
doaj   +1 more source

Engineering Slow‐Carrier Interfacial Recombination Enables Tailored Spectral Response

Advanced Science, EarlyView.
This work demonstrates that weak‐drift slow carriers are preferentially captured at generic semiconductor surfaces/interfaces and recombine. This process is manipulated to achieve tailored spectral response. A tens of µm‐wide depletion region is created to observe surface collection rates for photocarriers generated at different positions.
Yibo Zhang, Haozhe Wang, Zeke Liu, Yun Zhong, Zheng‐Hong Lu, Nazir P. Kherani   +5 more
wiley   +1 more source

Structural Influence on Radiation-induced Single-event Effects in SiC MOSFETs: Comparative Analysis of Planar and Trench Designs

Yuanzineng kexue jishu
The single-event susceptibility of three silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power devices structures (planar, trench and double trench) is researched by the technology computer-aided design (TCAD) simulation.
HU Libin1, 2, FENG Shaohui3, SUI Chenglong3, WANG Chengjie3, CHEN Miao3, LU Peng1, YANG Can1, SHU Lei1, , LU Jiang4, LI Bo1, 2
doaj   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source