Results 41 to 50 of about 5,000 (223)

TCAD device modelling and simulation of wide bandgap power semiconductors [PDF]

, 2018
Technology Computer Aided Design (TCAD) is essential for devices technology development, including wide bandgap power semiconductors. However. most TCAD tools were originally developed for silicon and their performance and accuracy for wide band gap ...
Samuel Perkins, Lophitis, Neo, Antoniou, Marina, Arvanitopoulos, Anastasios, Neophytos Lophitis, Marina Antoniou, Anastasios Arvanitopoulos, Perkins, Samuel, Lophitis, Neophytos   +8 more
core   +1 more source

Simulation of silicon carbide JFET with the TCAD tool SILVACO [PDF]

, 2013
118 σ.Εθνικό Μετσόβιο Πολυτεχνείο--Μεταπτυχιακή Εργασία. Διεπιστημονικό-Διατμηματικό Πρόγραμμα Μεταπτυχιακών Σπουδών (Δ.Π.Μ.Σ.) “Μικροσυστήματα και Νανοδιατάξεις”Σε αυτήν την διπλωματική εργασία εξετάζεται η προσομοίωση με TCAD, η βασική λειτουργία του ...
Stefanakis, Dionysios Z., Στεφανάκης, Διονύσιος Ζ.   +1 more
core   +1 more source

A Novel 3D TCAD simulation of a Thermoelectric Module configured for Thermoelectric Power Generation [PDF]

, 2011
This paper documents the novel design, modelling and 3D simulation of a single thermoelectric couple using the Technology Computer Aided Design (TCAD) semiconductor simulation software package by Synopsys. Preliminary simulation results are presented for
GRAINGER, Stephen, SHAMMAS, Noel, GOULD, Christopher, TAYLOR, Ian   +3 more
core   +4 more sources

Variation aware analysis of bridging fault testing [PDF]

, 2008
This paper investigates the impact of process variation on test quality with regard to resistive bridging faults. The input logic threshold voltage and gate drive strength parameters are analyzed regarding their process variation induced influence on ...
Ingelsson, Urban, Harrod, Peter, Bashir M. Al-Hashimi, Al-Hashimi, Bashir M., Urban Ingelsson, Peter Harrod   +5 more
core   +1 more source

Bias‐Tunable Two‐Terminal Organic Photodetector for Intelligent Imaging

Advanced Science, EarlyView.
A vertically stacked two‐terminal photodetector with a symmetric donor–acceptor–donor trilayer active exhibits reconfigurable photoresponse with bias‐tunable magnitude and polarity, together with sub‐millisecond response speed and a wide tunable output window.
Sangin Hahn, Sanghoon Park, Seunghyup Yoo   +2 more
wiley   +1 more source

Application of Noise to Avoid Overfitting in TCAD Augmented Machine Learning [PDF]

, 2020
In this paper, we propose and study the use of noise to avoid the overfitting issue in Technology Computer-Aided Design-augmented machine learning (TCAD-ML).
Zhang, Yuhao, Wang, Boyan, Yuhao Zhang, Mehta, Kashyap, Hiu-Yung Wong, Sophia Susan Raju, Ming Xiao, Raju, Sophia Susan, Kashyap Mehta, Xiao, Ming, Wong, Hiu Yung, Boyan Wang   +11 more
core   +1 more source

Quality in Simulation-Only Manuscripts Submitted to J-EDS

IEEE Journal of the Electron Devices Society, 2021
In recent years the Journal of the Electron Device Society (J-EDS) has experienced an increasing number of submissions of “simulation only” manuscripts.
Enrico Sangiorgi
doaj   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Integration of Machine Learning with Statistical Variation Analysis for Ferroelectric Transistor (FE-MOSFETs)

Materials Open
This paper investigates a comparative analysis of technology computer-aided design (TCAD) versus machine learning (ML) technique for ferroelectric-based substrate metal oxide semiconductor field effect transistor (FE-MOSFET), which shows the low power ...
Abhay Pratap Singh, R. K. Baghel, Sukeshni Tirkey   +2 more
doaj   +1 more source

TCAD simulations of radiation damage in 4H-SiC

Microelectronic Engineering
4 pages, 4 ...
Burin, Jürgen, Hahn, Christopher, Gaggl, Philipp, Gsponer, Andreas, Waid, Simon, Bergauer, Thomas   +5 more
openaire   +2 more sources