Results 41 to 50 of about 11,742 (216)

Development of Edgeless n-on-p Planar Pixel Sensors for future ATLAS Upgrades [PDF]

, 2012
The development of n-on-p "edgeless" planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature
Bagolini, A., Bomben, M., Boscardin, M., Bosisio, L., Calderini, G., Chauveau, J., Giacomini, G., La Rosa, A., Marchori, G., Zorzi, N.   +9 more
core   +2 more sources

Simulation of radiation-induced defects

, 2015
Mainly due to their outstanding performance the position sensitive silicon detectors are widely used in the tracking systems of High Energy Physics experiments such as the ALICE, ATLAS, CMS and LHCb at LHC, the world's largest particle physics ...
Peltola, Timo
core   +1 more source

Investigation of charge collection in a CdTe-Timepix detector [PDF]

, 2013
Energy calibration of CdTe detectors is usually done using known reference sources disregarding the exact amount of charge that is collected in the pixels. However, to compare detector and detector model the quantity of charge collected is needed.
Fröjdh, C., Fröjdh, E., Krapohl, D., Maneuski, D., Nilsson, H., Thungström, G.   +5 more
core   +1 more source

Schottky Barrier Engineering in n‐Type Organic Source‐Gated Transistors Enabling High Conductance

Advanced Materials Technologies, EarlyView.
This study introduces a modified source electrode architecture for n‐type organic source‐gated transistors (OSGTs). By integrating Schottky and Ohmic contact regions, the design achieves a thinner depletion envelope, enhancing mobility nearly tenfold and reducing threshold voltage.
Yonghee Kim, Jae Won Lee, Wonbeen Jeong, Eun Kwang Lee, Jiyoul Lee   +4 more
wiley   +1 more source

Integration of Machine Learning with Statistical Variation Analysis for Ferroelectric Transistor (FE-MOSFETs)

Materials Open
This paper investigates a comparative analysis of technology computer-aided design (TCAD) versus machine learning (ML) technique for ferroelectric-based substrate metal oxide semiconductor field effect transistor (FE-MOSFET), which shows the low power ...
Abhay Pratap Singh, R. K. Baghel, Sukeshni Tirkey   +2 more
doaj   +1 more source

Performance Evaluation of MISISFET- TCAD Simulation

International Journal of Computer Applications, 2012
A novel device n-MISISFET with a "dielectric stack" instead of the single insulator of n-MOSFET has been described and its characteristics has been obtained in this paper. The desired variation of threshold voltage is obtained with biasing for the novel n-MISISFET for various substrate doping concentrations, the effect temperature variation on various ...
Rajeevan Chandel, Gargi Khanna, Tarun Chaudhary   +2 more
openaire   +1 more source

The Use of Tcad Simulations in Semiconductor Devices Teaching [PDF]

2020 Transnational Engineering Education using Technology (TREET), 2020
Semiconductor devices have come a long way since the invention of the point contact transistor in 1947. These tiny devices transform and shape our lives and will continue to do so in ways we have yet to discover. Skills and knowledge in semiconductor devices are therefore essential for the development of a more sustainable world. Nevertheless, the ways
Xeni, Nikolas, Ghannam, Rami, Georgiev, Vihar, Adamu-Lema, Fikru, Badami, Oves, Asenov, Asen   +5 more
openaire   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

An Algorithmic Framework for Efficient Large-Scale Circuit Simulation Using Exponential Integrators

, 2015
We propose an efficient algorithmic framework for time domain circuit simulation using exponential integrator. This work addresses several critical issues exposed by previous matrix exponential based circuit simulation research, and makes it capable of ...
Cheng, Chung-Kuan, Kang, Ilgweon, Wang, Xinan, Yu, Wenjian, Zhuang, Hao   +4 more
core   +1 more source

Does a Nanowire Transistor Follow the Golden Ratio? A 2D Poisson-Schrödinger/3D Monte Carlo Simulation Study [PDF]

, 2017
In this work, we observed the signatures of isotropic charge distributions showing the same attributes as the golden ratio (Phi) described in art and architecture, we also present a simulation study of ultra-scaled n-type silicon nanowire transistors ...
Adamu-Lema, Fikru, Al-Ameri, Talib, Asenov, Asen, Georgiev, V.P.   +3 more
core   +1 more source