Results 11 to 20 of about 5,000 (223)
Electrical TCAD Simulation of STT-MRAMs [PDF]
2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)In this paper, we propose to develop a full TCAD simulation, using a commercial tool (Sentaurus), of an STT-MRAM device to better understand its electrical behavior. To our knowledge, it is the first time that a simulated I-V hysteresis loop is calibrated on experimental data.
Saifi, Hanane +8 more
openaire +3 more sources
Restructuring TCAD System: Teaching Traditional TCAD New Tricks [PDF]
, 2021 Traditional TCAD simulation has succeeded in predicting and optimizing the device performance; however, it still faces a massive challenge - a high computational cost.
Myung, Sanghoon +5 more
core +1 more source
3D TCAD Analysis Enabling ESD Layout Design Optimization
IEEE Journal of the Electron Devices Society, 2020 On-chip electrostatic discharge (ESD) protection design for integrated circuits (ICs) is a challenging design-for-reliability problem. Since ESD events involve very high current transients in very short time period, current crowding is unavoidable, which
Zijin Pan +4 more
doaj +1 more source
TCAD challenges and some Fraunhofer solutions [PDF]
, 2022 S.1-4In order to meet its industrial target to reduce the development time and costs for new semiconductor technologies, devices and circuits, TCAD must meet various challenges which are outlined in the ITRS.
Lorenz, J.
core +1 more source
Applied Sciences, 2021 A new analytical model to analyze and optimize the electrical characteristics of 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors (TMOSFETs) with a grounded bottom protection p-well (BPW) was proposed.
Jee-Hun Jeong, Ogyun Seok, Ho-Jun Lee
doaj +1 more source
, 2023 Low Gain Avalanche Detectors (LGADs) are thin silicon detectors with moderate internal signal amplification and time resolution as good as 17 ps for minimum ionizing particles. However, the current major limiting factor in granularity is due to protection structures preventing breakdown caused by high electric fields at the edge of the segmented ...
Nizam, M. +6 more
openaire +2 more sources
Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling
Micromachines, 2022 A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried out. The electrical and thermal performances in two device structures were analyzed based on TCAD simulation results.
Konstantin O. Petrosyants +2 more
doaj +1 more source
Nano-Electronic Simulation Software (NESS): A Novel Open-Source TCAD Simulation Environment
Journal of Microelectronic Manufacturing, 2020 This paper presents the latest status of the open source advanced TCAD simulator called Nano-Electronic Simulation Software (NESS) which is currently under development at the Device Modeling Group of the University of Glasgow.
Cristina Medina-Bailon +6 more
doaj +1 more source
Large-signal device simulation in time- and frequency-domain: a comparison [PDF]
, 2008 The aim of this paper is to compare the most common time- and frequency-domain numerical techniques for the determination of the steady-state solution in the physics-based simulation of a semiconductor device driven by a time-periodic generator.
Bonani, Fabrizio +7 more
core +1 more source
Micromachines, 2023 Due to its high thermal conductivity, high critical breakdown electric field, and high power, the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) has been generally used in industry.
Xinfeng Nie +5 more
doaj +1 more source