Results 11 to 20 of about 2,850,351 (204)

TCAD Simulation of Novel Semiconductor Devices [PDF]

2021 IEEE 14th International Conference on ASIC (ASICON), 2021
Simulation of conventional and emerging electronic devices using Technology Computer Aided Design (TCAD) tools has been an essential part of the semiconductor industry as well as academic research. Computational efficiency and accuracy of the numerical modeling are the key criteria on which quality and usefulness of a TCAD tool are ascertained. Further,
Dutta, Tapas, Medina Bailon, Cristina, Rezaei, Ali, Nagy, Daniel, Adamu-Lema, Fikru, Xeni, Nikolas, Abourrig, Yassine, Kumar, Naveen, Georgiev, Vihar, Asenov, Asen   +9 more
openaire   +3 more sources

Electrical TCAD Simulation of STT-MRAMs

2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
In this paper, we propose to develop a full TCAD simulation, using a commercial tool (Sentaurus), of an STT-MRAM device to better understand its electrical behavior. To our knowledge, it is the first time that a simulated I-V hysteresis loop is calibrated on experimental data.
Saifi, Hanane, Postel-Pellerin, Jérémy, Yazigy, Nicole, Couzi, Noémie, Marca, Vincenzo, Canet, Pierre, Caçoilo, Nuno, Di Pendina, Grégory, Sousa, Ricardo   +8 more
openaire   +3 more sources

TCAD simulation of thermally evaporated germanium

physica status solidi c, 2013
AbstractEpitaxial growth of germanium on silicon produces large misfit and threading dislocation densities which dramatically affect electronic properties of Ge. For this reason, TCAD standard models and parameters, optimized for bulk Ge, fail when applied to Ge epilayers.
DE IACOVO, ANDREA, Sorianello V., COLACE, Lorenzo, ASSANTO, GAETANO   +3 more
openaire   +2 more sources

Integrated Power Devices and TCAD Simulation

, 2014
From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics ...
Fu, Yue, Li, Zhanming, Ng, Wai Tung, Sin, Johnny Kin On   +3 more
openaire   +3 more sources

Thermoelectric power generation: Properties, application and novel TCAD simulation

, 2011
This paper documents the testing of commercial thermoelectric modules when they are connected for thermoelectric power generation, the design of a thermoelectric energy harvesting system, and the novel 3D TCAD simulation of a thermoelectric couple when ...
GRAINGER, Stephen, SHAMMAS, Noel, GOULD, Christopher, TAYLOR, Ian   +3 more
core   +10 more sources

The Use of Tcad Simulations in Semiconductor Devices Teaching [PDF]

2020 Transnational Engineering Education using Technology (TREET), 2020
Semiconductor devices have come a long way since the invention of the point contact transistor in 1947. These tiny devices transform and shape our lives and will continue to do so in ways we have yet to discover. Skills and knowledge in semiconductor devices are therefore essential for the development of a more sustainable world. Nevertheless, the ways
Xeni, Nikolas, Ghannam, Rami, Georgiev, Vihar, Adamu-Lema, Fikru, Badami, Oves, Asenov, Asen   +5 more
openaire   +1 more source

Optical TCAD on the Net: A tight-binding study of inter-band light transitions in self-assembled InAs/GaAs quantum dot photodetectors [PDF]

, 2013
A new capability of our well-known NEMO 3-D simulator (Ref. Klimeck et al., 2007 [10]) is introduced by carefully investigating the utility of III–V semiconductor quantum dots as infrared photodetectors at a wavelength of 1.2–1.5 μm.
Ahn, Bu-Young, Ryu, Hoon, Cho, Kumwon, Klimeck, Gerhard, Shin, Mincheol, Nam, Dukyun, Lee, JongSuk Ruth, Lee, Sunhee, Sin, Mincheol   +8 more
core   +2 more sources

TCAD simulation of AC-LGADs

, 2023
Low Gain Avalanche Detectors (LGADs) are thin silicon detectors with moderate internal signal amplification and time resolution as good as 17 ps for minimum ionizing particles. However, the current major limiting factor in granularity is due to protection structures preventing breakdown caused by high electric fields at the edge of the segmented ...
Nizam, M., Shin, K. W., Mazza, S. M., Ott, J., Seiden, A., Schumm, B., Zhao, Y.   +6 more
openaire   +2 more sources

Analysis of Electrical Characteristics in 4H-SiC Trench-Gate MOSFETs with Grounded Bottom Protection p-Well Using Analytical Modeling

Applied Sciences, 2021
A new analytical model to analyze and optimize the electrical characteristics of 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors (TMOSFETs) with a grounded bottom protection p-well (BPW) was proposed.
Jee-Hun Jeong, Ogyun Seok, Ho-Jun Lee
doaj   +1 more source

Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling

Micromachines, 2022
A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried out. The electrical and thermal performances in two device structures were analyzed based on TCAD simulation results.
Konstantin O. Petrosyants, Denis S. Silkin, Dmitriy A. Popov   +2 more
doaj   +1 more source