Results 91 to 100 of about 11,389 (196)
Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector
, 2017 Silicon pixel detectors are at the core of the current ATLAS detector and its planned upgrade. As the detectors in closest proximity to the interaction point, they will be exposed to a significant amount of radiation: prior to the HL-LHC, the innermost ...
Nachman, Benjamin
core
TCAD simulations of radiation damage in 4H-SiC
Microelectronic Engineering4 pages, 4 ...
Burin, Jürgen +5 more
openaire +2 more sources
Kolmogorov–Arnold Network for Transistor Compact Modeling
Advanced Intelligent Systems, Volume 8, Issue 1, January 2026.This work introduces Kolmogorov–Arnold network (KAN) for the transistor—an architecture that integrates interpretability with high precision in physics‐based function modeling. The results reveal that despite achieving superior prediction accuracy for critical figures of merit, KAN demonstrates unique inherent challenges for transistor modeling ...
Rodion Novkin, Hussam Amrouch
wiley +1 more source
DC Characteristics Optimization of a Double G-Shield 50 V RF LDMOS
Advances in Condensed Matter Physics, 2015 An N-type 50 V RF LDMOS with a RESURF (reduced surface field) structure of dual field plates (grounded shield, or G-shield) was investigated. The effect of the two field plates and N-drift region, including the junction depth and dopant concentration, on
Xiangming Xu +7 more
doaj +1 more source
Photo‐Gain Effect in κ‐Ga2O3 UV‐C Photoresistors Induced by Trapping of Photogenerated Holes
physica status solidi (b), Volume 263, Issue 1, January 2026.The “photo‐gain effect” amplifying the DC photocurrent of κ‐Ga2O3 UV‐C photoresistors is analyzed by means of 2D numerical simulations and linked to the capture of photogenerated holes by deep donor levels, probably associated with oxygen vacancies.
Andrea Asteriti +11 more
wiley +1 more source
Universal Charge-Conserving TFET SPICE Model Incorporating Gate Current and Noise
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2016 An analytical compact model for tunnel field-effect transistor (TFET) circuit simulation is extended by adding a gate tunnel current model, a charge-based capacitor model, and a noise model. The equation set is broadly applicable across materials systems
Hao Lu +5 more
doaj +1 more source
Generating Predictive Models for Emerging Semiconductor Devices
IEEE Journal of the Electron Devices SocietyCircuit design requires fast and scalable models which are compatible to modern electronic design automation tools. For this task typically analytical compact models are preferred.
Maximilian Reuter +7 more
doaj +1 more source
Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade
, 2013 In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost ...
Bagolini, A. +9 more
core +1 more source
IEEE Journal of the Electron Devices SocietyThis study presents a compact model for three-dimensional (3D) NAND flash memory that incorporates ferroelectric properties to enable accurate circuit-level simulations.
Sunghyun Woo +3 more
doaj +1 more source
AIP Advances, 2018 In order to improve the radiation resistance of semiconductor detector, 3D trench electrode Si detector structures have been proposed by the Brookhaven National Laboratory (BNL) in 2009.
Chuan Liao +4 more
doaj +1 more source