Results 101 to 110 of about 11,389 (196)

A 1 μm-Pitch Quanta Image Sensor Jot Device With Shared Readout

IEEE Journal of the Electron Devices Society, 2016
Characterization of a 1 μm-pitch, four-way shared readout quanta image sensor jot device is reported. The jot device achieved 0.48e- r.m.s. read noise with 230 μV/econversion gain.
Jiaju Ma, Leo Anzagira, Eric R. Fossum
doaj   +1 more source

Optimization of the buffer layer in a 15kV SiC N-type gate commutated thyristor for safe, low-loss switching

Power Electronic Devices and Components
This paper explores the design and optimization of the buffer layer in Silicon Carbide (SiC) N-type Gate Commutated Thyristors (GCTs) to enhance low-loss switching and ensure safe operation in ultra high-voltage (over 10 kV) applications.
Qinze Cao, Neophytos Lophitis, Arne Benjamin Renz, Kyrylo Melnyk, Marina Antoniou, Peter Michael Gammon   +5 more
doaj   +1 more source

Processing and characterization of epitaxial GaAs radiation detectors

, 2015
GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 $\mu\textrm{m}$ - 130 $\mu\textrm{m ...
Arsenovich, T., Gädda, A., Härkönen, J., Junkes, A., Karadzhinova, A., Kostamo, P., Lipsanen, H., Luukka, P., Mattila, M., Nenonen, S., Peltola, T., Riekkinen, T., Tuominen, E., Winkler, A., Wu, X.   +14 more
core   +1 more source

TCAD Simulation and Analysis of Selective Buried Oxide MOSFET Dynamic Power

Journal of Low Power Electronics and Applications, 2019
Low power consumption has become one of the major requirements for most microelectronic devices and systems. Increasing power dissipation may lead to decreasing system efficiency and lifetime.
Rana Mahmoud, Narayanan Madathumpadical, Hasan Al-Nashash   +2 more
doaj   +1 more source

A HV silicon vertical JFET: TCAD simulations

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2019
Abstract In the future ATLAS Inner Tracker detector (ITk), several silicon strip modules will be biased by a single High-Voltage (HV) line, so that a switch between each strip sensor and the HV line is required to disconnect faulty sensors. Such a switch must satisfy strict requirements, such as being radiation hard, being able to sustain high ...
Gabriele Giacomini, Wei Chen, David Lynn
openaire   +2 more sources

Wrapping Amorphous Indium-Gallium-Zinc-Oxide Transistors with High Current Density

Electronic Materials
Amorphous oxide semiconductor transistors with a high current density output are highly desirable for large-area electronics. In this study, wrapping amorphous indium-gallium-zinc-oxide (a-IGZO) transistors are proposed to enhance the current density ...
Jiaxin Liu, Shan Huang, Zhenyuan Xiao, Ning Li, Jaekyun Kim, Jidong Jin, Jiawei Zhang   +6 more
doaj   +1 more source

Variability-Aware Simulations of 5 nm Vertically Stacked Lateral Si Nanowires Transistors [PDF]

, 2017
In this work, we present a simulation study of vertically stacked lateral nanowires transistors (NWTs) considering various sources of statistical variability. Our simulation approach is based on various simulations techniques to capture the complexity in
Adamu-Lema, F., Al-Ameri, Talib, Asenov, A., Georgiev, V.P.   +3 more
core  

Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation. [PDF]

Micromachines (Basel), 2022
Zhao D, Wang Y, Chen Y, Shao J, Fu Z, Duan B, Liu F, Li X, Li T, Yang X, Li M, Yang Y.   +11 more
europepmc   +1 more source

Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation. [PDF]

Micromachines (Basel), 2022
Zhu Z, Cao W, Huang X, Shi Z, Zhou D, Xu W.   +5 more
europepmc   +1 more source

A New Nonlinear Model of Body Resistance in Nanometer PD SOI MOSFETs [PDF]

Journal of Intelligent Procedures in Electrical Technology, 2011
In this paper, a nonlinear model for the body resistance of a 45nm PD SOI MOSFET is developed. This model verified on the base of the small signal three-dimensional simulation results.
Arash Daghighi, Azam Askari Khoshuei
doaj