Results 111 to 120 of about 5,839,066 (223)

TCAD simulation study of heavy ion radiation effects on hetero junctionless tunnel field effect transistor. [PDF]

Sci Rep
Aishwarya K, Lakshmi B.
europepmc   +1 more source

TCAD simulation of the single event effects in normally-off GaN transistors after heavy ion radiation

European Conference on Radiation and Its Effects on Components and Systems, 2016
M. Zerarka, P. Austin, A. Bensoussan, F. Morancho, A. Durier   +4 more
semanticscholar   +1 more source

Optimizing Transport Carrier Free All-Polymer Solar Cells for Indoor Applications: TCAD Simulation under White LED Illumination. [PDF]

Polymers (Basel)
Salem MS, Okil M, Shaker A, Abouelatta M, Aledaily AN, Al-Dhlan KA, Alshammari MT, Salah MM, El Sabbagh M.   +8 more
europepmc   +1 more source

Interpreting artificial neural network-based modeling of 4 H-SiC mosfets using explainable AI. [PDF]

Sci Rep
Hsiao YS, Chang PJ, Chen BR, Rai R, Singh SK, Chauhan YS, Lee WJ, Chen NY, Wu TL.   +8 more
europepmc   +1 more source

Partition Noise Extraction Using TCAD Simulations

, 2019
openaire   +2 more sources

Combining quasi-one-dimensional modeling with region-wise structure analysis for rapid technology computer-aided design simulations of gate-all-around MOSFETs. [PDF]

Commun Eng
Lee KW, Kim IK, Jung SW, Jang MS, Hong SM.   +4 more
europepmc   +1 more source

Extraction of Electron and Hole Drift Velocities in Thin 4H-SiC PIN Detectors Using High-Frequency Readout Electronics. [PDF]

Sensors (Basel)
Gsponer A, Onder S, Gundacker S, Burin J, Knopf M, Radmanovac D, Waid S, Bergauer T.   +7 more
europepmc   +1 more source

Temperature-Dependent Reverse-Recovery Behavior Analysis and Circuit-Level Mitigation of Superjunction MOSFETs. [PDF]

Micromachines (Basel)
Cui W, Liao P, Wang Y, Guo J, Yang Y, Zhang DW, Xu H.   +6 more
europepmc   +1 more source

Pre-Silicon Accurate SPICE Modeling of Trench MOSFETs via Advanced TCAD Simulations and Dynamic Validation. [PDF]

Micromachines (Basel)
Tariq A, Minardi G, Cinnera Martino V, Fazio E, Rinaudo S, Privitera G, Neri F, Corsaro C.   +7 more
europepmc   +1 more source

Nanogate ferroelectric transistors with ultralow operation voltage of 0.6 V. [PDF]

Sci Adv
Meng D, Ma X, Shen Z, Xu L, Peng LM, Qiu C.   +5 more
europepmc   +1 more source