Results 111 to 120 of about 11,389 (196)

Breakdown Behavior of Metal Contact Positions in GaN HEMT with Nitrogen-Implanted Gate Using TCAD Simulation. [PDF]

Micromachines (Basel), 2022
Sheu G, Song YL, Mogarala R, Susmitha D, Issac K.   +4 more
europepmc   +1 more source

A Novel Nitrogen Ion Implantation Technique for Turning Thin Film "Normally On" AlGaN/GaN Transistor into "Normally Off" Using TCAD Simulation. [PDF]

Membranes (Basel), 2021
Sheu G, Song YL, Susmitha D, Issac K, Mogarala R.   +4 more
europepmc   +1 more source

TCAD simulations of humidity-induced breakdown of silicon sensors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
The breakdown voltage of silicon sensors is known to be affected by the ambient humidity. To understand the sensor’s humidity sensitivity, Synopsys TCAD was used to simulate n-in-p sensors for different effective relative humidities. Photon emission of hot electrons was imaged with a microscope to locate breakdown in the edge-region of the sensor.
Ninca, Ilona Stefana, Bloch, I., Brüers, B., Fadeyev, V., Fernandez-Tejero, J., Jessiman, C., Keller, J., Klein, C. T., Koffas, T., Lacker, H. M., Li, P., Scharf, C., Staats, E., Ullan, M., Unno, Y.   +14 more
openaire   +4 more sources

Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps. [PDF]

Micromachines (Basel), 2021
Song YL, Reddy MK, Chang LM, Sheu G.
europepmc   +1 more source

DEVSIM: A TCAD Semiconductor Device Simulator [PDF]

Journal of Open Source Software, 2022
openaire   +1 more source

Fully Depleted Monolithic Active Microstrip Sensors: TCAD Simulation Study of an Innovative Design Concept. [PDF]

Sensors (Basel), 2021
De Cilladi L, Corradino T, Dalla Betta GF, Neubüser C, Pancheri L.   +4 more
europepmc   +1 more source

Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework. [PDF]

Micromachines (Basel), 2021
Medina-Bailon C, Dutta T, Rezaei A, Nagy D, Adamu-Lema F, Georgiev VP, Asenov A.   +6 more
europepmc   +1 more source

TCAD Silicon Sensor Simulations [PDF]

Proceedings of The 20th Anniversary International Workshop on Vertex Detectors — PoS(Vertex 2011), 2012
openaire   +2 more sources

TCAD simulation of stitching for passive CMOS strip detectors

Journal of Instrumentation
Abstract Most of the tracking detectors for high energy particle experiments are filled with silicon detectors since they are radiation hard, they can give very small spatial resolution and they can take advantage of the silicon electronics foundries' developments and production lines.
M. Baselga, J-H. Arling, N. Davis, J. Dingfelder, I.M. Gregor, M. Hauser, F. Hügging, K. Jakobs, M. Karagounis, R. Koppenhöfer, K. Kröninger, F. Lex, U. Parzefall, B. Sari, S. Spannagel, D. Sperlich, J. Weingarten, I. Zatocilova   +17 more
openaire   +3 more sources

3D Stacked Spin Qubit by TCAD Simulations

2024 International 3D Systems Integration Conference (3DIC)
Spin qubit systems are promising candidates for Si-based quantum computing. The conventional spin-qubit cell consists of control and readout units around a quantum dot (QD) with the excess electrons functioning as spin qubits. This complicates the integration of qubits because of the many wires and extra mechanisms, such as the requirement of shuttling
openaire   +2 more sources