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Atomistic simulations of dielectric screening in large scale microelectronic devices at first principles accuracy

Computational Materials Today
The dielectric screening of a microelectronic device and the related capacity-voltage (C-V) relationship is a major component in TCAD (technology computer-aided design) simulations.
Zhao-Yi Yan +4 more
doaj +1 more source

Symbolic Model Evaluation for TCAD Device Simulation

, 2009
Symbolic model evaluation is a powerful method for de- veloping models for technology computer-aided design (TCAD) device simulation. It gives users the ability to accurately describe physical phenomena. Coupled with automatic creation of derivative expressions, new models can be rapidly developed with performance rivaling source code approaches. A new
openaire +1 more source

Overview of software tools for modeling single event upsets in microelectronic devices

Безопасность информационных технологий, 2016
The paper presents the results of the analysis of existing simulation tools for evaluation of single event upset susceptibility of microelectronic devices with deep sub-micron feature sizes. This simulation tools are meant to replace obsolete approach to
Anatoly Alexandrovich Smolin
doaj

Investigation of Monolithic 3D Integrated Circuit Inverter with Feedback Field Effect Transistors Using TCAD Simulation. [PDF]