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Simulation workshop on HV/HR-CMOS TCAD and Geant4 simulations
, 2016 Casse, G., Peric, I.
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Introduction of Synopsys Sentaurus TCAD Simulation
2017Technology computer-aided design (TCAD) refers to the use of computer simulations to develop and optimize semiconductor processing technologies and devices.
Yung-Chun Wu, Yi-Ruei Jhan
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Modeling of Stacking Faults in 4H-SiC n-Type Epilayer for TCAD Simulation
IEEE Transactions on Electron Devices, 2023Current–voltage characteristics of an n-type 4H-silicon carbide (SiC) epilayer containing a stacking fault (SF) were analyzed using a technology computer-aided design (TCAD) simulation.
S. Asada, K. Murata, H. Tsuchida
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TCAD simulation of microwave circuits: The Doherty amplifier
Solid-State Electronics, 2022Power amplifiers (PAs) for next generation of communication systems are expected to operate at higher frequency and bandwidth to support the growing data rates.
S. Donati Guerrieri +2 more
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MOSFET simulation - TCAD tools/packages
2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676), 2004Industry-standard TCAD software packages are widely used by semiconductor companies to optimise processes and devices in integrated circuits fabrication. After process and device simulation one can go ahead with circuit simulation using Spice. This paper focuses on the matching of these program packages in the area of parameter and characteristics ...
I. Campian +5 more
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TCAD simulation of photodetector spectral response
Proceedings IEEE/WIC International Conference on Web Intelligence (WI 2003), 2004In this paper, the spectral responsivity of a photodetector is determined by extracting optical parameters (refractive index and extinction coefficients) from the reflectivity measurement data and by treating the surface recombination velocity as a free parameter.
B. Jacob +4 more
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TCAD simulation of thermally evaporated germanium
physica status solidi c, 2013AbstractEpitaxial growth of germanium on silicon produces large misfit and threading dislocation densities which dramatically affect electronic properties of Ge. For this reason, TCAD standard models and parameters, optimized for bulk Ge, fail when applied to Ge epilayers.
DE IACOVO, ANDREA +3 more
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