Results 151 to 160 of about 5,839,066 (223)

Hierarchical TCAD device simulation of FinFETs

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2015
A framework for FinFET design studies is presented. Our physics-based modeling approach allows to accurately capture the effects of channel cross-section, orientation and strain as well as contact resistance - for the first time all in one tool.
M. Karner, Z. Stanojevic, C. Kernstock, H.W. Cheng-Karner, O. Baumgartner   +4 more
openaire   +1 more source

Study on the Impact of Mg-Channeled Implantation on Junction Termination Extension for GaN Vertical Power Devices Using TCAD Simulation

IEEE Transactions on Electron Devices
This study investigates the influence of different magnesium (Mg) ion implantation techniques on the performance of gallium nitride (GaN)-based junction termination extension (JTE) structures. To this end, we perform a systematic TCAD simulation study on
Kazuki Kitagawa, Maciej Matys, T. Kachi, J. Suda   +3 more
semanticscholar   +1 more source

Multi-Order Differential Neural Network for TCAD Simulation of the Semiconductor Devices

Design Automation Conference
Technology Computer Aided Design (TCAD) is a crucial step in the design and manufacturing of semiconductor devices. It involves solving physical equations that describe the behavior of semiconductor devices to predict various device parameters ...
Zifei Cai, Anaoxue Huang, Yifeng Xiong, Dejiang Mu, Xiangshui Miao, Xingsheng Wang   +5 more
semanticscholar   +1 more source

Investigation of β-Ga2O3 MOSFET With Double Drift Layers by TCAD Simulation

IEEE Transactions on Electron Devices
In this article, we have proposed and analyzed a novel $\beta $ -phase gallium oxide ( $\beta $ -Ga2O3) metal–oxide–semiconductor field-effect transistor (MOSFET) with double drift layers (DDLs) located in the gate to drain region.
X. Jia, Yibo Wang, C. Fang, Haodong Hu, Yan Liu, Zhengdong Luo, Y. Hao, Genquan Han   +7 more
semanticscholar   +1 more source

TCAD SIMULATION AND PERFORMANCE ANALYSIS OF SINGLE AND DUAL GATE OTFTs

Surface review and letters, 2020
This paper presents finite element-based numerical simulation and performance analysis of dual and single gate pentacene-based organic thin film transistors (OTFTs) using technology computer-aided design (TCAD) tools.
A. Dwivedi, P. Kumari
semanticscholar   +1 more source

Soft Recovery Process of Mechanically Degraded Flexible a-IGZO TFTs With Various Rolling Stresses and Defect Simulation Using TCAD Simulation

IEEE Transactions on Electron Devices, 2020
We examine the effects of repetitive rolling stress on thin-film transistors (TFTs) using various rolling radii, and evaluate the subsequent thermal treatment at various temperatures.
Beom-Su Kim, Hyun-Jun Jeong, Ki-Lim Han, Won-Bum Lee, Yoon-Seo Kim, Jin-seong Park   +5 more
semanticscholar   +1 more source

Advanced Theory of TCAD Process Simulation

2011
A key simulation task in TCAD process simulation is to solve the diffusion equations over the simulation mesh to predict the impurity doping profile after thermal processing. In 3D TCAD, the simulation grid size is large and diffusion is often the most time-consuming simulation procedure.
Simon Li, Yue Fu
openaire   +1 more source

3D TCAD Simulation for CMOS Nanoeletronic Devices

2018
Yung-Chun Wu, Yi-Ruei Jhan
openaire   +2 more sources

Three-dimensional TCAD Process and Device Simulations

2006 16th Biennial University/Government/Industry Microelectronics Symposium, 2006
Shrinking feature sizes, novel device designs as well as stress engineering increase the need for three- dimensional process and device simulations. We present several application examples for full 3D process and device simulations using Sentaurus TCAD, including a 3D NMOSFET with shallow trench isolations (STI), a PMOSFET device with SiGe pockets for ...
I. Avci, P. Balasingam, K. El Sayed, J. Gharib, M.D. Johnson, K. Kells, G. Kiralyfalvi, V. Koltyzhenkov, A. Kucherov, E. Lyumkis, O. Penzin, B. Polsky, V. Rao, S.D. Simeonov, N. Strecker, Z. Tan, L. Villablanca, W. Fichtner   +17 more
openaire   +1 more source

Circuit model parameter generation with TCAD simulation

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004., 2005
In the case of the Hash memory, various kinds of transistors and the wide range of operation voltage are necessary to achieve the read/write operations. Therefore, the characteristics of transistors are measured in the silicon for the circuit design, and the test vehicle run must he processed.
null Jun-Ha Lee, null Hoong-Joo Lee
openaire   +1 more source