Results 161 to 170 of about 11,389 (196)

Modeling trap dynamics in oxide-engineered heterostructure TFETs for breast cancer detection. [PDF]

Sci Rep
Ghosh R, Saha P.
europepmc   +1 more source

Thermal Management with AlN Passivation in AlGaN/GaN HEMTs with an Air Gap Gate for Improved RF Performance: A Simulation Study. [PDF]

Micromachines (Basel)
Won YH, Kim TS, Lee JH, Lim CY, Min BG, Kang DM, Kim HS.   +6 more
europepmc   +1 more source

The Study of the Transient Dose Rate Effect on ROIC Pixels in Ultra-Large-Scale Infrared Detectors. [PDF]

Micromachines (Basel)
Liu Y, Wang B, Tang Z, Chen M, Wang H, Yang W, Wu L.   +6 more
europepmc   +1 more source

Simulation workshop on HV/HR-CMOS TCAD and Geant4 simulations

, 2016
Casse, G., Peric, I.
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MOSFET simulation - TCAD tools/packages

2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676), 2004
Industry-standard TCAD software packages are widely used by semiconductor companies to optimise processes and devices in integrated circuits fabrication. After process and device simulation one can go ahead with circuit simulation using Spice. This paper focuses on the matching of these program packages in the area of parameter and characteristics ...
I. Campian, O.-G. Profirescu, A. Ungureanu, F. Babarada, E. Lakatos, C. Amza   +5 more
openaire   +1 more source

TCAD simulation of photodetector spectral response

Proceedings IEEE/WIC International Conference on Web Intelligence (WI 2003), 2004
In this paper, the spectral responsivity of a photodetector is determined by extracting optical parameters (refractive index and extinction coefficients) from the reflectivity measurement data and by treating the surface recombination velocity as a free parameter.
B. Jacob, M. Klemenc, C. Petit, A. Witzig, W. Fichtner   +4 more
openaire   +1 more source

TCAD simulation of thermally evaporated germanium

physica status solidi c, 2013
AbstractEpitaxial growth of germanium on silicon produces large misfit and threading dislocation densities which dramatically affect electronic properties of Ge. For this reason, TCAD standard models and parameters, optimized for bulk Ge, fail when applied to Ge epilayers.
DE IACOVO, ANDREA, Sorianello V., COLACE, Lorenzo, ASSANTO, GAETANO   +3 more
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Hierarchical TCAD device simulation of FinFETs

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2015
A framework for FinFET design studies is presented. Our physics-based modeling approach allows to accurately capture the effects of channel cross-section, orientation and strain as well as contact resistance - for the first time all in one tool.
M. Karner, Z. Stanojevic, C. Kernstock, H.W. Cheng-Karner, O. Baumgartner   +4 more
openaire   +1 more source

Advanced Theory of TCAD Process Simulation

2011
A key simulation task in TCAD process simulation is to solve the diffusion equations over the simulation mesh to predict the impurity doping profile after thermal processing. In 3D TCAD, the simulation grid size is large and diffusion is often the most time-consuming simulation procedure.
Simon Li, Yue Fu
openaire   +1 more source