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TCAD simulation of Low Gain Avalanche Detectors
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2016Abstract In the present work, detailed simulation using Technology Computer Aided Design (TCAD) tool, Silvaco for non-irradiated and irradiated LGAD (Low Gain Avalanche Detector) devices has been carried out. The effects of different design parameters and proton irradiation on LGAD operation are discussed in detail. An already published effective two
Ranjeet Dalal +3 more
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Methodology for predictive calibration of TCAD simulators
SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest, 2002This paper presents an original methodology for calibrating Technology Computer-Aided Design (TCAD) simulators. This approach associates physical analysis of models, statistical analysis of data, and systematic use of Design of Experiments. This new concept, inspired by the Taguchi's methodology, allows to minimise the difference between simulations ...
G. Le Carval +3 more
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TFET simulation using Matlab and sentaraus TCAD
2016 International Conference on Advances in Computing, Communications and Informatics (ICACCI), 2016TFET (Tunnel field effect transistor) is widely used in low voltage operating electronic devices because of the ability to achieve a subthreshold swing lower than 60mV/decade. Lower subthreshold swing is also a root cause for the low power and the high speed behavior of the device. Conduction of current in TFET is due to band to band tunneling.
Rockey Bhardwaj, Gurinderpal Singh
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TCAD Simulation on FinFET n-type Power Device HCI Reliability Improvement
IEEE International Reliability Physics Symposium, 2019FinFET technology can significantly improve CMOS device performance due to its unique Fin structure, which provides tight gate control over the channel. With FinFET architecture, hot carrier injection (HCI) effect is one of the major reliability concerns
B. Zhu +10 more
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Semiconductor Science and Technology, 2019
Based on an InGaN/GaN light emitting diode (LED) structure, monolithically integrated vertical driving metal-oxide-semiconductor field-effect transistors (MOSFETs) were designed and experimentally implemented using a selective area growth (SAG) method. A
Xing Lu +3 more
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Based on an InGaN/GaN light emitting diode (LED) structure, monolithically integrated vertical driving metal-oxide-semiconductor field-effect transistors (MOSFETs) were designed and experimentally implemented using a selective area growth (SAG) method. A
Xing Lu +3 more
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Numerical study of flexible perovskite/Si tandem solar cell using TCAD simulation
Optical and quantum electronics, 2023Tarek I. Alanazi, Omer I. Eid, M. Okil
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AEU - International Journal of Electronics and Communications, 2019
In this work, a novel Tunnel field effect transistor which is constructed by the combination of tri – gate engineering and triple material gate TFET model is analysed.
S. Komalavalli, T. Samuel, P. Vimala
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In this work, a novel Tunnel field effect transistor which is constructed by the combination of tri – gate engineering and triple material gate TFET model is analysed.
S. Komalavalli, T. Samuel, P. Vimala
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Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs
International Symposium on Power Semiconductor Devices and IC's, 2019TCAD simulation has been recognized as a powerful design tool for insulated gate bipolar transistors (IGBTs). In this work, excellent agreement between 3D TCAD simulations and experimental current-voltage characteristics were obtained in the up to 1000 A/
Masahiro Watanabe +20 more
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NUMERICAL SIMULATION OF SET USING TCAD
i-manager’s Journal on Electronics Engineering, 2021ASHRAF JAVED +2 more
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Study of Layout Dependent Radiation Hardness of FinFET SRAM using Full Domain 3D TCAD Simulation
IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, 2019Due to the emerging of novel technologies, such as stacked horizontal nanowires, and novel 3D integration schemes, such as stacking PMOS on top of NMOS, multiple transistors in a SRAM cell might be struck simultaneously by a single Alpha particle.
K. Huynh +4 more
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