Results 171 to 180 of about 11,389 (196)

Three-dimensional TCAD Process and Device Simulations

2006 16th Biennial University/Government/Industry Microelectronics Symposium, 2006
Shrinking feature sizes, novel device designs as well as stress engineering increase the need for three- dimensional process and device simulations. We present several application examples for full 3D process and device simulations using Sentaurus TCAD, including a 3D NMOSFET with shallow trench isolations (STI), a PMOSFET device with SiGe pockets for ...
I. Avci, P. Balasingam, K. El Sayed, J. Gharib, M.D. Johnson, K. Kells, G. Kiralyfalvi, V. Koltyzhenkov, A. Kucherov, E. Lyumkis, O. Penzin, B. Polsky, V. Rao, S.D. Simeonov, N. Strecker, Z. Tan, L. Villablanca, W. Fichtner   +17 more
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Circuit model parameter generation with TCAD simulation

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004., 2005
In the case of the Hash memory, various kinds of transistors and the wide range of operation voltage are necessary to achieve the read/write operations. Therefore, the characteristics of transistors are measured in the silicon for the circuit design, and the test vehicle run must he processed.
null Jun-Ha Lee, null Hoong-Joo Lee
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Advanced Theory of TCAD Device Simulation

2011
This chapter reviews the basic theories of device simulation within the framework of TCAD. Figure 3.1 shows a practical design of a device simulator of 3D TCAD capability with various modules. One may regard the drift-diffusion (DD) equation module as central building block of a 3D TCAD device simulator.
Simon Li, Yue Fu
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Expanding TCAD simulations from grid to cloud

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2015
In this work, the distribution, execution and performance of TCAD simulations on grid and cloud systems are investigated. A module for distributed computing which can uniformly interface both grid and cloud computing systems has been implemented within GTS Framework.
H. Demel, Z. Stanojevic, M. Karner, G. Rzepa, T. Grasser   +4 more
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Setting Up a 3D TCAD Simulation

2011
In order to perform a 3D TCAD simulation, we first need the mask layout for all the process steps. The mask layout can be designed in a variety of software including drafting tools like Autodesk AutoCAD® and specialized EDA tools like Cadence Virtuoso® and Tanner L-Edit®.
Simon Li, Yue Fu
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Introduction of Synopsys Sentaurus TCAD Simulation

2017
Technology computer-aided design (TCAD) refers to the use of computer simulations to develop and optimize semiconductor processing technologies and devices.
Yung-Chun Wu, Yi-Ruei Jhan
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Integrated Power Devices and TCAD Simulation

2014
From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics ...
Fu, Yue, Li, Zhanming, Ng, Wai Tung, Sin, Johnny Kin On   +3 more
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Integration of factory simulation with TCAD process and device simulation within a total TCAD approach to DFM

SPIE Proceedings, 1999
This paper describes the integration of TCAD and factory simulation software tools to help facilitate their adoption as an integral part of a DFM (Design for Manufacturability) strategy. Automated exchange of data enables the impact on manufacturing operations to be more readily considered at an earlier stage during the process design procedure.
Vidar K. Nilsen, Anthony J. Walton
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Investigation of ESD second breakdown TCAD simulation

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, 2010
This paper presents the methodology to obtain the snapback curves and second breakdown point of an ESD stressed device through TCAD simulation. This method allows an excellent ESD simulation convergence and then good ESD prediction with a significantly reduced computation time. One 0.5um CMOS technology has been simulated for experimental support.
Cai Xiaowu, Yan Beiping, Han Xiaoyong
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TCAD simulation of Low Gain Avalanche Detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2016
Abstract In the present work, detailed simulation using Technology Computer Aided Design (TCAD) tool, Silvaco for non-irradiated and irradiated LGAD (Low Gain Avalanche Detector) devices has been carried out. The effects of different design parameters and proton irradiation on LGAD operation are discussed in detail. An already published effective two
Ranjeet Dalal, Geetika Jain, Ashutosh Bhardwaj, Kirti Ranjan   +3 more
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