Results 181 to 190 of about 5,839,066 (223)
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IEEE Transactions on Nuclear Science, 2018
Tunnel field-effect transistors (TFETs) have promising structures for future ultrascaled devices thanks to their capability in reducing swing threshold and short channel effects.
Qianqiong Wang +3 more
semanticscholar +1 more source
Tunnel field-effect transistors (TFETs) have promising structures for future ultrascaled devices thanks to their capability in reducing swing threshold and short channel effects.
Qianqiong Wang +3 more
semanticscholar +1 more source
Electrical TCAD Simulations and Modeling in Germanium
2013Chapter 4 extends a TCAD device simulator to allow electrical simulations of scaled Ge MOSFETs.
Geert Hellings, Kristin De Meyer
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TCAD Simulation of Total Ionizing Dose Response on DSOI nMOSFET
Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, 2019A new structure named double-SOI (DSOI) is investigated in this paper. Total ionizing dose (TID) experiment was carried out on DSOI nMOSFET with OFF bias during irradiation. The irradiation dose is high up to 5 Mrad(Si).
Y. Huang +10 more
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Hierarchical Modeling for TCAD Simulation of Short-Channel 2D Material-Based FETs
Solid-State Electronics, 2022L. Silvestri +7 more
semanticscholar +1 more source
Simulation of BioGFET sensors using TCAD
Solid-State Electronics, 2023Elsa Fuente-Zapico +7 more
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Physical mobility modeling for TCAD device simulation
2016Physical device modeling is one of the key technologies to continue semiconductor device scaling. Effects due to the quantum nature of electrons, the band structure of solids, as well as scattering and non-equilibrium transport dominate device performance.
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