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Methodology for predictive calibration of TCAD simulators
SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest, 2002This paper presents an original methodology for calibrating Technology Computer-Aided Design (TCAD) simulators. This approach associates physical analysis of models, statistical analysis of data, and systematic use of Design of Experiments. This new concept, inspired by the Taguchi's methodology, allows to minimise the difference between simulations ...
G. Le Carval +3 more
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TFET simulation using Matlab and sentaraus TCAD
2016 International Conference on Advances in Computing, Communications and Informatics (ICACCI), 2016TFET (Tunnel field effect transistor) is widely used in low voltage operating electronic devices because of the ability to achieve a subthreshold swing lower than 60mV/decade. Lower subthreshold swing is also a root cause for the low power and the high speed behavior of the device. Conduction of current in TFET is due to band to band tunneling.
Rockey Bhardwaj, Gurinderpal Singh
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NUMERICAL SIMULATION OF SET USING TCAD
i-manager’s Journal on Electronics Engineering, 2021ASHRAF JAVED +2 more
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Electrical TCAD Simulations and Modeling in Germanium
2013Chapter 4 extends a TCAD device simulator to allow electrical simulations of scaled Ge MOSFETs.
Geert Hellings, Kristin De Meyer
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Simulation of BioGFET sensors using TCAD
Solid-State Electronics, 2023Elsa Fuente-Zapico +7 more
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Physical mobility modeling for TCAD device simulation
2016Physical device modeling is one of the key technologies to continue semiconductor device scaling. Effects due to the quantum nature of electrons, the band structure of solids, as well as scattering and non-equilibrium transport dominate device performance.
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TCAD Device Simulation With Graph Neural Network
IEEE Electron Device Letters, 2023Wonik Jang +4 more
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