Results 21 to 30 of about 5,839,066 (223)
Virtualization as a New Scaling Law for Semiconductor Devices Beyond Geometric Scaling. [PDF]
SmallAI‐enabled semiconductor scaling law. Virtualization emerges as an AI‐enabled scaling law for semiconductors, where progress depends on replacing physical iteration with credible virtual evidence. Surrogate modeling accelerates design‐space exploration, digital twins virtualize process learning, and defect‐to‐reliability inference advances ...
Wang Z +8 more
europepmc +2 more sources
Radiation Hardness Study of LG = 20 nm FinFET and Nanowire SRAM Through TCAD Simulation
IEEE Transactions on Electron Devices, 2021 Radiation hardness of FinFET and stacked nanowire (NW) static random-access memory (SRAM), with ${L} _{\text {G}} =20$ nm, which corresponds to high-density 5 nm technology node, is studied and compared using 3-D technology computer-aided design (TCAD ...
Adam Elwailly +3 more
semanticscholar +1 more source
Study of Vertical Ga2O3 FinFET Short Circuit Ruggedness using Robust TCAD Simulation
ECS Journal of Solid State Science and Technology, 2022 In this paper, the short circuit ruggedness of Gallium Oxide (Ga2O3) vertical FinFET is studied using Technology Computer-Aided-Design (TCAD) simulations.
A. Lu +3 more
semanticscholar +1 more source
Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling
Micromachines, 2022 A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried out. The electrical and thermal performances in two device structures were analyzed based on TCAD simulation results.
Konstantin O. Petrosyants +2 more
doaj +1 more source
A new TCAD simulation method for direct CMOS electron detectors optimization.
Ultramicroscopy, 2022 A custom CMOS image sensor hardened by design is characterized in a transmission electron microscope, with the aim to extract basic parameters such as the quantum efficiency, the modulation transfer function and finally the detective quantum efficiency ...
O. Marcelot +8 more
semanticscholar +1 more source
Nano-Electronic Simulation Software (NESS): A Novel Open-Source TCAD Simulation Environment
Journal of Microelectronic Manufacturing, 2020 This paper presents the latest status of the open source advanced TCAD simulator called Nano-Electronic Simulation Software (NESS) which is currently under development at the Device Modeling Group of the University of Glasgow.
Cristina Medina-Bailon +6 more
doaj +1 more source
A TCAD Simulation Study of Three-Independent-Gate Field-Effect Transistors at the 10-nm Node
IEEE Transactions on Electron Devices, 2021 Three-independent-gate FETs (TIGFETs) are Schottky-barrier-based devices, which can be reconfigured to be either n- or p-type allowing for innovative compact logic gate implementations.
Patsy Cadareanu, P. Gaillardon
semanticscholar +1 more source
Powernet: SOI Lateral Power Device Breakdown Prediction With Deep Neural Networks
IEEE Access, 2020 The breakdown performance is a critical metric for power device design. This paper explores the feasibility of efficiently predicting the breakdown performance of silicon on insulator (SOI) lateral power device using multi-layer neural networks as an ...
Jing Chen +6 more
doaj +1 more source
Micromachines, 2023 Due to its high thermal conductivity, high critical breakdown electric field, and high power, the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) has been generally used in industry.
Xinfeng Nie +5 more
doaj +1 more source
Ferroelectric behavior and NCFETs - TCAD Simulation
Asian Journal of Electrical and Electronic Engineering, 2021 With the miniaturization of transistors, the current leakage also increases due to the increasing tunnelling effect. Plus, Boltzmann’s tyranny limits the subthreshold swing to be best and ideal at 60 mV/decade. Due to these, the power consumption in transistors keeps soaring up. Therefore, in this paper, the Negative Capacitance Effect Field Transistor
Naimah Darmis +2 more
openaire +1 more source