Off-State Performance Characterization of an AlGaN/GaN Device via Artificial Neural Networks
Micromachines, 2022 Due to the complexity of the 2D coupling effects in AlGaN/GaN HEMTs, the characterization of a device’s off-state performance remains the main obstacle to exploring the device’s breakdown characteristics. To predict the off-state performance of AlGaN/GaN
Jing Chen +7 more
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Numerical simulation and compact modeling of low voltage pentacene based OTFTs
Journal of Science: Advanced Materials and Devices, 2019 As organic thin film transistors (OTFTs) are poised to play a key role in flexible and low-cost electronic applications, there is a need of device modeling to support technology optimization and circuit design.
A.D.D. Dwivedi +3 more
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TCAD Device Simulations of Irradiated Silicon Detectors [PDF]
Proceedings of The 28th International Workshop on Vertex Detectors — PoS(Vertex2019), 2020 The high hadron fluences expected during the HL-LHC programme will damage the silicon detectors. New TCAD simulation models are needed to understand the expected detector behaviour. This review examines the challenges ahead for different kind of detector devices, with attention to the acceptor removal effect in LGADs, surface damage for Monolithics and
Francisco Rogelio Palomo Pinto +5 more
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Does a Nanowire Transistor Follow the Golden Ratio? A 2D Poisson-Schrödinger/3D Monte Carlo Simulation Study [PDF]
, 2017 In this work, we observed the signatures of isotropic charge distributions showing the same attributes as the golden ratio (Phi) described in art and architecture, we also present a simulation study of ultra-scaled n-type silicon nanowire transistors ...
Adamu-Lema, Fikru +3 more
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Atoms-to-Circuits Simulation Investigation of CNT Interconnects for Next Generation CMOS Technology [PDF]
, 2017 In this study, we suggest a hierarchical model to investigate the electrical performance of carbon nanotube (CNT)- based interconnects. From the density functional theory, we have obtained important physical parameters, which are used in TCAD ...
Amoroso, Salvatore M. +11 more
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Simulation of radiation-induced defects
, 2015 Mainly due to their outstanding performance the position sensitive silicon detectors are widely used in the tracking systems of High Energy Physics experiments such as the ALICE, ATLAS, CMS and LHCb at LHC, the world's largest particle physics ...
Peltola, Timo
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Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]
, 2008 Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio +2 more
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Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability [PDF]
, 2014 In this paper we illustrate how by using advanced atomistic TCAD tools the interplay between long-range process variation and short-range statistical variability in FinFETs can be accurately modelled and simulated for the purposes of Design-Technology Co-
Asenov, A. +4 more
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Electrical TCAD Simulation of STT-MRAMs
2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)In this paper, we propose to develop a full TCAD simulation, using a commercial tool (Sentaurus), of an STT-MRAM device to better understand its electrical behavior. To our knowledge, it is the first time that a simulated I-V hysteresis loop is calibrated on experimental data.
Saifi, Hanane +8 more
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Quality in Simulation-Only Manuscripts Submitted to J-EDS
IEEE Journal of the Electron Devices Society, 2021 In recent years the Journal of the Electron Device Society (J-EDS) has experienced an increasing number of submissions of “simulation only” manuscripts.
Enrico Sangiorgi
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