Results 31 to 40 of about 5,839,066 (223)

Simulations of the breakdown characteristics of n-on-p backside-illumination Silicon Photomultipliers by TCAD

Results in Physics, 2018
This paper investigates, using Synopsys Sentaurus TCAD simulation, the dependence of the breakdown voltage of n-on-p backside-illumination Silicon Photomultipliers (BSI-SiPM) on the implantation dose, the implantation energy and the screening SiO2 ...
Ran He, Guangqing Yan, Jian Liu, Wenxuan Cheng, Rongdan Liu, Kun Liang, Ru Yang, Dejun Han   +7 more
doaj   +1 more source

TCAD-Machine Learning Framework for Device Variation and Operating Temperature Analysis With Experimental Demonstration

IEEE Journal of the Electron Devices Society, 2020
This work, for the first time, experimentally demonstrates a TCAD-Machine Learning (TCAD-ML) framework to assist the analysis of device-to-device variation and operating (ambient) temperature without the need of physical quantities extraction.
Hiu Yung Wong, Ming Xiao, Boyan Wang, Yan Ka Chiu, Xiaodong Yan, Jiahui Ma, Kohei Sasaki, Han Wang, Yuhao Zhang   +8 more
doaj   +1 more source

Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation

Electronics, 2021
This study presents the optimization of the lateral device geometry and thickness of the channel and barrier layers of AlGaN/GaN high electron mobility transistors (HEMTs) for the enhancement of breakdown voltage (VBR) characteristics using a TCAD ...
S. Pharkphoumy, V. Janardhanam, Tae-Hoon Jang, Jaejung Park, K. Shim, C. Choi   +5 more
semanticscholar   +1 more source

Improvement of TCAD Augmented Machine Learning Using Autoencoder for Semiconductor Variation Identification and Inverse Design

IEEE Access, 2020
A machine learning (ML) model by combing two autoencoders and one linear regression model is proposed to avoid overfitting and to improve the accuracy of Technology Computer-Aided Design (TCAD)-augmented ML for semiconductor structural variation ...
Kashyap Mehta, Sophia Susan Raju, Ming Xiao, Boyan Wang, Yuhao Zhang, Hiu Yung Wong   +5 more
doaj   +1 more source

Prediction of Single Event Effects in FinFET Devices Based on Deep Learning

IEEE Journal of the Electron Devices Society, 2023
The Single Event Effect (SEE) of FinFET devices has become one of the challenging issues affecting the reliability of modern electronic systems in space and terrestrial applications.
Haiyu Liu, Shulong Wang, Rong Zhao, Hao Ma, Lan Ma, Shijie Liu, Shupeng Chen, Hongxia Liu   +7 more
doaj   +1 more source

3D Simulation, Electrical Characteristics and Customized Manufacturing Method for a Hemispherical Electrode Detector

Sensors, 2022
The theoretical basis of a hypothetical spherical electrode detector was investigated in our previous work. It was found that the proposed detector has very good electrical characteristics, such as greatly reduced full depletion voltage, small ...
Manwen Liu, Wenzheng Cheng, Zheng Li, Zhenyang Zhao, Zhihua Li   +4 more
doaj   +1 more source

Double-gate MOSFET Model Implemented in Verilog-AMS Language for the Transient Simulation and the Configuration of Ultra Low-power Analog Circuits [PDF]

International Journal of Electronics and Telecommunications, 2021
This paper deals with the implementation of a DC and AC double-gate MOSFET compact model in the Verilog- AMS language for the transient simulation and the configuration of ultra low-power analog circuits. The Verilog-AMS description of the proposed model
Billel Smaani, Yacin Meraihi, Fares Nafa, Mohamed Salah Benlatreche, Hamza Akroum, Saida Latreche   +5 more
doaj   +1 more source

Investigation of electron trapping in AlGaN/GaN HEMT with Fe-doped buffer through DCT characterization and TCAD device simulations

AIP Advances, 2021
The electron trapping in AlGaN/GaN high-electron mobility transistors (HEMTs) with iron (Fe)-doped buffer is investigated through Drain Current Transient (DCT) measurements and TCAD physics-based 2D device simulations.
Mohamed Bouslama, P. Vigneshwara Raja, Florent Gaillard, Raphael Sommet, Jean-Christophe Nallatamby   +4 more
doaj   +1 more source

Modeling and simulation of bulk gallium nitride power semiconductor devices

AIP Advances, 2016
Bulk gallium nitride (GaN) power semiconductor devices are gaining significant interest in recent years, creating the need for technology computer aided design (TCAD) simulation to accurately model and optimize these devices.
G. Sabui, P. J. Parbrook, M. Arredondo-Arechavala, Z. J. Shen   +3 more
doaj   +1 more source

Identification of power PIN diode design parameters: Circuit and device-based simulation approach

Ain Shams Engineering Journal, 2021
This paper aims to present a detailed systematic approach to identify the main design parameters of PIN power diodes. Firstly, the diode physical parameters are initialized using simple analytical equations.
A. Shaker, Marwa S. Salem, A. Zekry, M. El-Banna, G.T. Sayah, M. Abouelatta   +5 more
doaj   +1 more source