Results 41 to 50 of about 11,389 (196)

Measurements and TCAD simulation of novel ATLAS planar pixel detector structures for the HL-LHC upgrade

, 2014
The LHC accelerator complex will be upgraded between 2020-2022, to the High-Luminosity-LHC, to considerably increase statistics for the various physics analyses.
Dinu, N., Gkougkousis, E., Lounis, A., Nellist, C.   +3 more
core   +3 more sources

Development of Edgeless n-on-p Planar Pixel Sensors for future ATLAS Upgrades [PDF]

, 2012
The development of n-on-p "edgeless" planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature
Bagolini, A., Bomben, M., Boscardin, M., Bosisio, L., Calderini, G., Chauveau, J., Giacomini, G., La Rosa, A., Marchori, G., Zorzi, N.   +9 more
core   +2 more sources

Investigation of charge collection in a CdTe-Timepix detector [PDF]

, 2013
Energy calibration of CdTe detectors is usually done using known reference sources disregarding the exact amount of charge that is collected in the pixels. However, to compare detector and detector model the quantity of charge collected is needed.
Fröjdh, C., Fröjdh, E., Krapohl, D., Maneuski, D., Nilsson, H., Thungström, G.   +5 more
core   +1 more source

Ion Crowding Effect in Unilaterally Downsized Perovskite Memristors

Advanced Science, EarlyView.
The downscaling of perovskite memristors incorporating monocrystalline nanoplates is accompanied by an ion crowding effect, which greatly enhances the local electric field in the vicinity of electrode. The highly controlled crowding of anions and vacancies results in anisotropic switching characteristics as well as unique morphology modification ...
Conghui Tan, Meiqi An, Weili Liu, Haotian Wang, Shuai Yang, Jing Li, Jianliang Li, Yingmin Luo, Chao Wang, Jiao Xu, Yaodan Chi, Yiming Yang   +11 more
wiley   +1 more source

Remediation of contaminated marine sediment using bentonite, kaolin and sand as capping materials [PDF]

, 2019
There is a growing public concern over the issue of sediment contamination resulting from industrial, municipal wastewater, mining activities, and improper use of chemical fertilizer or pesticides.
Kabir Aliyu, Mohammed
core   +1 more source

Efficiency and timing performance of the MuPix7 high-voltage monolithic active pixel sensor

, 2018
The MuPix7 is a prototype high voltage monolithic active pixel sensor with 103 times 80 um2 pixels thinned to 64 um and incorporating the complete read-out circuitry including a 1.25 Gbit/s differential data link.
Aeschbacher, Frank Meier, Augustin, Heiko, Berger, Niklaus, Bruch, Dorothea vom, Dittmeier, Sebastian, González, Annie Meneses, Grzesik, Carsten, Hammerich, Jan, Hartenstein, Ulrich, Huang, Qinhua, Huth, Lennart, Immig, David Maximilian, Kiehn, Moritz, Kozlinskiy, Alexandr, Perić, Ivan, Perrevoort, Ann-Kathrin, Schöning, André, Shrestha, Shruti, Wauters, Frederik, Wiedner, Dirk   +19 more
core   +1 more source

Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations [PDF]

, 2019
The cubic polytype (3C-) of Silicon Carbide (SiC) is an emerging semiconductor technology for power devices. The featured isotropic material properties along with the Wide Band Gap (WBG) characteristics make it an excellent choice for power Metal Oxide ...
Antoniou, M, Arvanitopoulos, A, Gyftakis, K N, Jennings, M R, Li, Fan, Lophitis, N, Perkins, S   +6 more
core   +1 more source

Performance Evaluation of MISISFET- TCAD Simulation

International Journal of Computer Applications, 2012
A novel device n-MISISFET with a "dielectric stack" instead of the single insulator of n-MOSFET has been described and its characteristics has been obtained in this paper. The desired variation of threshold voltage is obtained with biasing for the novel n-MISISFET for various substrate doping concentrations, the effect temperature variation on various ...
Rajeevan Chandel, Gargi Khanna, Tarun Chaudhary   +2 more
openaire   +1 more source

The Use of Tcad Simulations in Semiconductor Devices Teaching [PDF]

2020 Transnational Engineering Education using Technology (TREET), 2020
Semiconductor devices have come a long way since the invention of the point contact transistor in 1947. These tiny devices transform and shape our lives and will continue to do so in ways we have yet to discover. Skills and knowledge in semiconductor devices are therefore essential for the development of a more sustainable world. Nevertheless, the ways
Xeni, Nikolas, Ghannam, Rami, Georgiev, Vihar, Adamu-Lema, Fikru, Badami, Oves, Asenov, Asen   +5 more
openaire   +1 more source

Ultraviolet Photodetectors Based on 4H‐SiC With Honeycomb‐Like Light‐Trapping Structures

Advanced Science, EarlyView.
A facile photoelectrochemical etching method creates honeycomb‐like light‐trapping microstructures on SiC. These microstructures suppress UV reflection and enhance absorption by extending the optical path and facilitating multiple internal reflections, while strengthening the local electric field.
Huifan Xiong, Xiliang Luo, Qunsi Yang, Yibo Hu, Jieshi Chen, Lihui Song, Deren Yang, Xiaodong Pi   +7 more
wiley   +1 more source