Results 41 to 50 of about 5,839,066 (223)

Numerical simulation and compact modeling of low voltage pentacene based OTFTs

Journal of Science: Advanced Materials and Devices, 2019
As organic thin film transistors (OTFTs) are poised to play a key role in flexible and low-cost electronic applications, there is a need of device modeling to support technology optimization and circuit design.
A.D.D. Dwivedi, S.K. Jain, Rajeev Dhar Dwivedi, Shubham Dadhich   +3 more
doaj   +1 more source

Off-State Performance Characterization of an AlGaN/GaN Device via Artificial Neural Networks

Micromachines, 2022
Due to the complexity of the 2D coupling effects in AlGaN/GaN HEMTs, the characterization of a device’s off-state performance remains the main obstacle to exploring the device’s breakdown characteristics. To predict the off-state performance of AlGaN/GaN
Jing Chen, Yufeng Guo, Jun Zhang, Jianhua Liu, Qing Yao, Jiafei Yao, Maolin Zhang, Man Li   +7 more
doaj   +1 more source

TCAD Device Simulations of Irradiated Silicon Detectors [PDF]

Proceedings of The 28th International Workshop on Vertex Detectors — PoS(Vertex2019), 2020
The high hadron fluences expected during the HL-LHC programme will damage the silicon detectors. New TCAD simulation models are needed to understand the expected detector behaviour. This review examines the challenges ahead for different kind of detector devices, with attention to the acceptor removal effect in LGADs, surface damage for Monolithics and
Francisco Rogelio Palomo Pinto, Michael Moll, Jörn Schwandt, E.Giulio Villani, Yana Gurimskaya, Rafael Millán   +5 more
openaire   +1 more source

Advanced TCAD Simulation and Calibration of Gallium Oxide Vertical Transistor

ECS Journal of Solid State Science and Technology, 2020
In this paper, advanced β-Ga2O3 TCAD simulation parameters and methodologies are presented by calibrating simulation setup to vertical junctionless multi-gate transistor experimental data.
H. Wong, A. C. Tenkeu
semanticscholar   +1 more source

Optimizing a-IGZO Source-Gated Transistor Current by Structure Alteration via TCAD Simulation and Experiment

IEEE Transactions on Electron Devices
This study aims to increase the output current of the amorphous indium–gallium–zinc oxide (a-IGZO) source-gated transistor (SGT) through technology computer-aided design (TCAD) simulation and experiment.
Pongsakorn Sihapitak, J. Bermundo, E. Bestelink, R. Sporea, Y. Uraoka   +4 more
semanticscholar   +1 more source

Electrical TCAD Simulation of STT-MRAMs

2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
In this paper, we propose to develop a full TCAD simulation, using a commercial tool (Sentaurus), of an STT-MRAM device to better understand its electrical behavior. To our knowledge, it is the first time that a simulated I-V hysteresis loop is calibrated on experimental data.
Saifi, Hanane, Postel-Pellerin, Jérémy, Yazigy, Nicole, Couzi, Noémie, Marca, Vincenzo, Canet, Pierre, Caçoilo, Nuno, Di Pendina, Grégory, Sousa, Ricardo   +8 more
openaire   +2 more sources

Quality in Simulation-Only Manuscripts Submitted to J-EDS

IEEE Journal of the Electron Devices Society, 2021
In recent years the Journal of the Electron Device Society (J-EDS) has experienced an increasing number of submissions of “simulation only” manuscripts.
Enrico Sangiorgi
doaj   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Performance Evaluation of MISISFET- TCAD Simulation

International Journal of Computer Applications, 2012
A novel device n-MISISFET with a "dielectric stack" instead of the single insulator of n-MOSFET has been described and its characteristics has been obtained in this paper. The desired variation of threshold voltage is obtained with biasing for the novel n-MISISFET for various substrate doping concentrations, the effect temperature variation on various ...
Rajeevan Chandel, Gargi Khanna, Tarun Chaudhary   +2 more
openaire   +1 more source

The Use of Tcad Simulations in Semiconductor Devices Teaching [PDF]

2020 Transnational Engineering Education using Technology (TREET), 2020
Semiconductor devices have come a long way since the invention of the point contact transistor in 1947. These tiny devices transform and shape our lives and will continue to do so in ways we have yet to discover. Skills and knowledge in semiconductor devices are therefore essential for the development of a more sustainable world. Nevertheless, the ways
Xeni, Nikolas, Ghannam, Rami, Georgiev, Vihar, Adamu-Lema, Fikru, Badami, Oves, Asenov, Asen   +5 more
openaire   +1 more source