Results 51 to 60 of about 11,389 (196)

Integration of Machine Learning with Statistical Variation Analysis for Ferroelectric Transistor (FE-MOSFETs)

Materials Open
This paper investigates a comparative analysis of technology computer-aided design (TCAD) versus machine learning (ML) technique for ferroelectric-based substrate metal oxide semiconductor field effect transistor (FE-MOSFET), which shows the low power ...
Abhay Pratap Singh, R. K. Baghel, Sukeshni Tirkey   +2 more
doaj   +1 more source

Impact of self-heating on the statistical variability in bulk and SOI FinFETs [PDF]

, 2015
In this paper for the first time we study the impact of self-heating on the statistical variability of bulk and SOI FinFETs designed to meet the requirements of the 14/16nm technology node.
Alexander, Craig, Asenov, Asen, Brown, Andrew R., Cheng, Binjie, Millar, Campbell, Nedjalkov, Mihail, Wang, Liping   +6 more
core   +1 more source

Pinch‐Off Mechanism of High‐Gain Organic Transistors with Field Plates: Statistical Analysis, Device Simulations and Compact Modeling

Advanced Electronic Materials, EarlyView.
Statistical analysis of over 3000 devices reveals a novel operating mechanism in printed organic thin‐film transistors featuring a grounded field plate beneath the source. The field plate governs the low and tunable pinch‐off, enabling excellent current saturation and ultra‐high gain.
Kazuki Ono, Ryota Kobayashi, Eva Bestelink, Radu A. Sporea, Satoru Inoue, Yudai Hemmi, Yuji Ikeda, Tatsuo Hasegawa, Hiroyuki Matsui   +8 more
wiley   +1 more source

Radiation Hardness Studies in a CCD with High-Speed Column Parallel Readout

, 2007
Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived particles.
, A Sopczak, A Sopczak for the LCFI collaboration, C Bowdery, C Buttar, C Damerell, Ch-K Kim, D Djendaoui, D Maneuski, G Davies, J R Janesick, K Bekhouche, K Stefanov, K Stefanov, L Dehimi, M Koziel, M S Robbins, O Ursache, S Aoulmit, S Worm, T Greenshaw, T Tikkanen, T Woolliscroft   +22 more
core   +1 more source

One-Dimensional Multi-Subband Monte Carlo Simulation of Charge Transport in Si Nanowire Transistors [PDF]

, 2016
In this paper, we employ a newly-developed one-dimensional multi-subband Monte Carlo (1DMSMC) simulation module to study electron transport in nanowire structures.
Alexander, Craig, Asenov, Asen, Brown, Andrew, Georgiev, Vihar, Millar, Campbell, Nedjalkov, Mihail, Riddet, Craig, Sadi, Toufik, Towie, Ewan, Wang, Liping   +9 more
core   +1 more source

Beyond Silicon: Toward Sustainable, NIR‐II, and Conformable Organic Photodiodes

Advanced Energy Materials, EarlyView.
In this perspective, a strategic shift in organic photodetector (OPD) research is proposed: instead of the incremental advances in silicon's stronghold arena, the most impactful future for OPDs lies in addressing silicon's intrinsic limitations, i.e., detection in the longer wavelength range above silicon's coverage (>1100 nm, termed as near infrared ...
Hrisheekesh Thachoth Chandran, Jiaming Huang, Hao Xia, Rakesh Rajendran Nair, Shen Xing, Gang Li, Karl Leo, Johannes Benduhn   +7 more
wiley   +1 more source

An Improved Model of Single-Event Transients Based on Effective Space Charge for Metal–Oxide–Semiconductor Field-Effect Transistor

Micromachines, 2023
In this paper, a single-event transient model based on the effective space charge for MOSFETs is proposed. The physical process of deposited and moving charges is analyzed in detail.
Yutao Zhang, Hongliang Lu, Chen Liu, Yuming Zhang, Ruxue Yao, Xingming Liu   +5 more
doaj   +1 more source

Characterization of Thin p-on-p Radiation Detectors with Active Edges

, 2016
Active edge p-on-p silicon pixel detectors with thickness of 100 $\mu$m were fabricated on 150 mm Float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and charge collection
Granja, C., Gädda, A., Härkönen, J., Jakubek, J., Jakubek, M., Kalliopuska, J., Peltola, T., Wu, X.   +7 more
core   +1 more source

Low Gain Avalanche Detectors (LGAD) for particle physics and synchrotron applications [PDF]

, 2018
A new avalanche silicon detector concept is introduced with a low gain in the region of ten, known as a Low Gain Avalanche Detector, LGAD. The detector's characteristics are simulated via a full process simulation to obtain the required doping profiles ...
Ashby, J., Bates, R., Bullough, M., Doherty, F., Flores, L., Maneuski, D., Moffat, N., Simon, L., Tartoni, N.   +8 more
core   +1 more source

Machine Learning‐Based Standard Compact Model Binning Parameter Extraction Methodology for Integrated Circuit Design of Next‐Generation Semiconductor Devices

Advanced Intelligent Systems, EarlyView.
This study presents a neural network‐based methodology for Berkeley Short‐Channel IGFET Model–Common Multi‐Gate parameter extraction of gate‐all‐around field effect transistors, integrating binning adaptive sampling and transformer neural networks to efficiently capture current–voltage and capacitance–voltage characteristics.
Jaeweon Kang, Johyeon Kim, Sueyeon Kim, Hyunbo Cho, Jongwook Jeon   +4 more
wiley   +1 more source