Results 61 to 70 of about 11,389 (196)

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer

Nanoscale Research Letters, 2022
In this work, a vertical gallium nitride (GaN)-based trench MOSFET on 4-inch free-standing GaN substrate is presented with threshold voltage of 3.15 V, specific on-resistance of 1.93 mΩ·cm2, breakdown voltage of 1306 V, and figure of merit of 0.88 GW/cm2.
Wei He, Jian Li, Zeliang Liao, Feng Lin, Junye Wu, Bing Wang, Maojun Wang, Nan Liu, Hsien-Chin Chiu, Hao-Chung Kuo, Xinnan Lin, Jingbo Li, Xinke Liu   +12 more
doaj   +1 more source

Rad-hard vertical JFET switch for the HV-MUX system of the ATLAS upgrade Inner Tracker

, 2015
This work presents a new silicon vertical JFET (V-JFET) device, based on the trenched 3D-detector technology developed at IMB-CNM, to be used as switches for the High-Voltage powering scheme of the ATLAS upgrade Inner Tracker.
Fernandez-Martinez, Pablo, Flores, David, Hidalgo, Salvador, Lynn, David, Quirion, David, Ullan, Miguel   +5 more
core   +1 more source

Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs [PDF]

, 2017
The characteristic performance of n-type and p-type inversion (IM) mode, accumulation (AC) mode and junctionless (JL) mode, bulk Germanium FinFET device with 3-nm gate length (LG) are demonstrated by using 3-D quantum transport device simulation.
Asenov, Asen, Georgiev, Vihar P., Jhan, Yi-Ruei, Kurniawan, Erry Dwi, Lee, Jaehyun, Lema, Fikru-Adamu, Lin, Yu-Ru, Sadi, Toufik, Soundarapandian, Karuppasamy Pandian, Thirunavukkarasu, Vasanthan, Wu, Yung-Chun, Yang, Shang-Yi   +11 more
core   +1 more source

Review of Memristors for In‐Memory Computing and Spiking Neural Networks

Advanced Intelligent Systems, EarlyView.
Memristors uniquely enable energy‐efficient, brain‐inspired computing by acting as both memory and synaptic elements. This review highlights their physical mechanisms, integration in crossbar arrays, and role in spiking neural networks. Key challenges, including variability, relaxation, and stochastic switching, are discussed, alongside emerging ...
Mostafa Shooshtari, Teresa Serrano‐Gotarredona, Bernabé Linares‐Barranco   +2 more
wiley   +1 more source

Hybrid Convolutional Neural Network‐Analytical Model for Prediction of Line Edge Roughness‐Induced Performance Variations in Fin‐Shaped Field‐Effect Transistor Devices and SRAM

Advanced Intelligent Systems, EarlyView.
This work presents a hybrid model for predicting the electrical characteristics of fin‐shaped field‐effect transistor devices and SRAM with line edge roughness. The model consists of a convolutional neural network (CNN) and an analytical model that simulates the electrical characteristics of transistors using the outputs of CNN, enabling fast and ...
Jaehyuk Lim, Myongjin Kim, Changwoo Han, Hyoung Won Baac, Changhwan Shin   +4 more
wiley   +1 more source

Experimental and simulation study of irradiated silicon pad detectors for the CMS High Granularity Calorimeter

, 2017
The foreseen upgrade of the LHC to its high luminosity phase (HL-LHC), will maximize the physics potential of the facility. The upgrade is expected to increase the instantaneous luminosity by a factor of 5 and deliver an integrated luminosity of 3000 fb ...
Peltola, Timo
core   +1 more source

Design and First Tests of a Radiation-Hard Pixel Sensor for the European X-Ray Free-Electron Laser [PDF]

, 2014
The high intensity and high repetition rate of the European X-ray Free-Electron Laser, presently under construction in Hamburg, requires silicon sensors which can stand X-ray doses of up to 1 GGy for 3 years of operation at high bias voltage.
Fretwurst, Eckhart, Klanner, Robert, Kopsalis, Ioannis, Schwandt, Joern, Zhang, Jiaguo   +4 more
core   +1 more source

Computational design of two‐dimensional MA2Z4 family field‐effect transistor for future Ångström‐scale CMOS technology nodes

InfoMat, EarlyView.
Two‐dimensional MA2Z4 such as MoSi2N4 offer a new path to extend transistor scaling beyond the limits of silicon. Due to their exceptional properties, these 2D semiconductors are promising candidates for future Ångström‐scale CMOS technology. This review outlines the computational design and roadmap bridging materials discovery, device design and ...
Che Chen Tho, Zongmeng Yang, Shibo Fang, Shiying Guo, Liemao Cao, Chit Siong Lau, Fei Liu, Shengli Zhang, Jing Lu, L. K. Ang, Lain‐Jong Li, Yee Sin Ang   +11 more
wiley   +1 more source

GaN JBS Diode Device Performance Prediction Method Based on Neural Network

Micromachines, 2023
GaN JBS diodes exhibit excellent performance in power electronics. However, device performance is affected by multiple parameters of the P+ region, and the traditional TCAD simulation method is complex and time-consuming.
Hao Ma, Xiaoling Duan, Shulong Wang, Shijie Liu, Jincheng Zhang, Yue Hao   +5 more
doaj   +1 more source

Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs

, 2015
We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors.
Akyol, Fatih, Bajaj, Sanyam, Chumbes, Eduardo M., Hung, Ting-Hsiang, Khurgin, Jacob, Krishnamoorthy, Sriram, Park, Pil Sung, Rajan, Siddharth, Reza, Shahed, Shoron, Omor F.   +9 more
core   +1 more source