Results 81 to 90 of about 5,839,066 (223)

Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations

IEEE Journal of the Electron Devices Society, 2017
In this paper, the type, activation energy (Ea) and cross section (σn) of the GaN buffer traps existing in the AlGaN/GaN high-electron mobility transistors are investigated through low frequency (LF) S-parameters measurements.
Nandha Kumar Subramani, Julien Couvidat, Ahmad Al Hajjar, Jean-Christophe Nallatamby, Raphael Sommet, Raymond Quere   +5 more
doaj   +1 more source

Generating Predictive Models for Emerging Semiconductor Devices

IEEE Journal of the Electron Devices Society
Circuit design requires fast and scalable models which are compatible to modern electronic design automation tools. For this task typically analytical compact models are preferred.
Maximilian Reuter, Andreas Kramer, Dakyung Lee, Jens Trommer, Niladri Bhattacharjee, Giulio Galderisi, Thomas Mikolajick, Klaus Hofmann   +7 more
doaj   +1 more source

Universal Charge-Conserving TFET SPICE Model Incorporating Gate Current and Noise

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2016
An analytical compact model for tunnel field-effect transistor (TFET) circuit simulation is extended by adding a gate tunnel current model, a charge-based capacitor model, and a noise model. The equation set is broadly applicable across materials systems
Hao Lu, Wenjun Li, Yeqing Lu, Patrick Fay, Trond Ytterdal, Alan Seabaugh   +5 more
doaj   +1 more source

Compact Modeling of 3D NAND Flash Memory With Ferroelectric Characteristics: A Comparative Analysis of O/N/O and O/N/F Structures

IEEE Journal of the Electron Devices Society
This study presents a compact model for three-dimensional (3D) NAND flash memory that incorporates ferroelectric properties to enable accurate circuit-level simulations.
Sunghyun Woo, Jihwan Lee, Gyunseok Ryu, Myounggon Kang   +3 more
doaj   +1 more source

Designs and electric properties studied of 3D trench electrode Si detector with adjustable central collection electrode

AIP Advances, 2018
In order to improve the radiation resistance of semiconductor detector, 3D trench electrode Si detector structures have been proposed by the Brookhaven National Laboratory (BNL) in 2009.
Chuan Liao, Manwen Liu, Ya Zhang, Jun Zhao, Zheng Li   +4 more
doaj   +1 more source

A 1 μm-Pitch Quanta Image Sensor Jot Device With Shared Readout

IEEE Journal of the Electron Devices Society, 2016
Characterization of a 1 μm-pitch, four-way shared readout quanta image sensor jot device is reported. The jot device achieved 0.48e- r.m.s. read noise with 230 μV/econversion gain.
Jiaju Ma, Leo Anzagira, Eric R. Fossum
doaj   +1 more source

Optimization of the buffer layer in a 15kV SiC N-type gate commutated thyristor for safe, low-loss switching

Power Electronic Devices and Components
This paper explores the design and optimization of the buffer layer in Silicon Carbide (SiC) N-type Gate Commutated Thyristors (GCTs) to enhance low-loss switching and ensure safe operation in ultra high-voltage (over 10 kV) applications.
Qinze Cao, Neophytos Lophitis, Arne Benjamin Renz, Kyrylo Melnyk, Marina Antoniou, Peter Michael Gammon   +5 more
doaj   +1 more source

A HV silicon vertical JFET: TCAD simulations

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2019
Abstract In the future ATLAS Inner Tracker detector (ITk), several silicon strip modules will be biased by a single High-Voltage (HV) line, so that a switch between each strip sensor and the HV line is required to disconnect faulty sensors. Such a switch must satisfy strict requirements, such as being radiation hard, being able to sustain high ...
Gabriele Giacomini, Wei Chen, David Lynn
openaire   +2 more sources

TCAD Simulation and Analysis of Selective Buried Oxide MOSFET Dynamic Power

Journal of Low Power Electronics and Applications, 2019
Low power consumption has become one of the major requirements for most microelectronic devices and systems. Increasing power dissipation may lead to decreasing system efficiency and lifetime.
Rana Mahmoud, Narayanan Madathumpadical, Hasan Al-Nashash   +2 more
doaj   +1 more source

Wrapping Amorphous Indium-Gallium-Zinc-Oxide Transistors with High Current Density

Electronic Materials
Amorphous oxide semiconductor transistors with a high current density output are highly desirable for large-area electronics. In this study, wrapping amorphous indium-gallium-zinc-oxide (a-IGZO) transistors are proposed to enhance the current density ...
Jiaxin Liu, Shan Huang, Zhenyuan Xiao, Ning Li, Jaekyun Kim, Jidong Jin, Jiawei Zhang   +6 more
doaj   +1 more source