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Correction: Switching performance assessment of gate-all-around InAs-Si vertical TFET with triple metal gate, a simulation study. [PDF]
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Two-Dimensional Materials, the Ultimate Solution for Future Electronics and Very-Large-Scale Integrated Circuits. [PDF]
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Reduced subthreshold swing in a vertical tunnel FET using a low-work-function live metal strip and a low-k material at the drain. [PDF]
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Multifunctional Reconfigurable Operations in an Ultra-Scaled Ferroelectric Negative Transconductance Transistor. [PDF]
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A Study on Dual-Gate Dielectric Face Tunnel Field-Effect Transistor for Ternary Inverter. [PDF]
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