Results 141 to 150 of about 10,498 (226)
TCAD simulation study of heavy ion radiation effects on hetero junctionless tunnel field effect transistor. [PDF]
Aishwarya K, Lakshmi B.
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Reliability and Validity of the Star Excursion Balance Test for Evaluating Dynamic Balance of Upper Extremities. [PDF]
Yang QH +7 more
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WS2 Nanosheet-Based Ultrascaled Field-Effect Transistor for Hydrogen Gas Sensing: Addressing the Sensitivity-Downscaling Trade-Off. [PDF]
Tamersit K.
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Computational Assessment of I-V Curves and Tunability of 2D Semiconductor van der Waals Heterostructures. [PDF]
Liang Q +5 more
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Dielectrically modulated ferroelectric-TFET (Ferro-TFET) based biosensors
Materials Science and Engineering: B, 2023Basab Das, Brinda Bhowmick
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IEEE Sensors Journal, 2019
This paper compares circular gate (CG) tunnel field effect transistor (TFET) and uniform gate Heterojunction (HJ) TFET as label-free biosensors based on dielectric modulation. Neutral and charged biomolecules with different values of dielectric constant are considered.
Rupam Goswami, Brinda Bhowmick
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This paper compares circular gate (CG) tunnel field effect transistor (TFET) and uniform gate Heterojunction (HJ) TFET as label-free biosensors based on dielectric modulation. Neutral and charged biomolecules with different values of dielectric constant are considered.
Rupam Goswami, Brinda Bhowmick
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Modeling and Performance Analysis of a Split-Gate T-Shape Channel DM DPDG-TFET Label-Free Biosensor
IEEE Sensors Journal, 2023This article proposes, for the first time, a split-gate T-shape channel dielectrically modulated (DM) double-gate TFET (DGTFET) with a drain pocket (DP). This device can be used as a label-free biosensor.
Namrata Shaw, B. Mukhopadhyay
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COMPARISON BETWEEN HETERO-JUNCTION TECHNIQUE TFET AND CONVENTIONAL TFET
2021 International Conference on Computer Communication and Informatics (ICCCI), 2021Field Effect Transistors (FET) and its bio sensing application is of keen interest to many researchers in today's era, because of the favourable circumstances that they offer regarding being viable with the todays CMOS innovation, scaling down, practical large scale manufacturing, and name free location measure also called label-free detection process.
Aarchi Jain +3 more
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Physica Scripta, 2023
In this manuscript, we present a negative capacitance TFET with extended back gate-drain overlap (DEBG-NC-TFET) to enhance DC and analog/high frequency (HF) performance.
Anil Kumar Pathakamuri, C. Pandey
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In this manuscript, we present a negative capacitance TFET with extended back gate-drain overlap (DEBG-NC-TFET) to enhance DC and analog/high frequency (HF) performance.
Anil Kumar Pathakamuri, C. Pandey
semanticscholar +1 more source

