Results 81 to 90 of about 86,415 (337)
A low power NAND gate integrated circuit employing thin film resistors and lateral p-n-p transitors Final engineering report [PDF]
Low power NAND gate integrated circuit employing thin film resistors and lateral p-n-p ...
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Advanced Functional Materials, EarlyView.Multicolor optoelectronic synapses are realized by vertically integrating solution‐processed MoS2 thin‐film and SWCNT. The electronically disconnected but interactive MoS2 enables photon‐modulated remote doping, producing a bi‐directional photoresponse.
Jihyun Kim +8 more
wiley +1 more source
Threshold-Voltage Extraction Methods for Atomically Deposited Disordered ZnO Thin-Film Transistors [PDF]
, 2023 Minho Yoon
openalex +1 more source
Device Integration Technology for Practical Flexible Electronics Systems
Advanced Functional Materials, EarlyView.Flexible device integration technologies are essential for realizing practical flexible electronic systems. In this review paper, wiring and bonding techniques critical for the industrial‐scale manufacturing of wearable devices are emphasized based on flexible electronics.
Masahito Takakuwa +5 more
wiley +1 more source
Reduction of Bias and Light Instability of Mixed Oxide Thin-Film Transistors
Applied Sciences, 2017 Despite their potential use as pixel-switching elements in displays, the bias and light instability of mixed oxide semiconductor thin-film transistors (TFTs) still limit their application to commercial products.
Mallory Mativenga +2 more
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Advanced Functional Materials, EarlyView.This study investigates electromechanical PUFs that improve on traditional electric PUFs. The electron transport materials are coated randomly through selective ligand exchange. It produces multiple keys and a key with motion dependent on percolation and strain, and approaches almost ideal inter‐ and intra‐hamming distances.
Seungshin Lim +7 more
wiley +1 more source
Lead Iodide Perovskite Light-Emitting Field-Effect Transistor
, 2015 Despite the widespread use of solution-processable hybrid organic-inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film ...
Bruno, Annalisa +4 more
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Ice Lithography: Recent Progress Opens a New Frontier of Opportunities
Advanced Functional Materials, EarlyView.This review focuses on recent advancements in ice lithography, including breakthroughs in compatible precursors and substrates, processes and applications, hardware, and digital methods. Moreover, it offers a roadmap to uncover innovation opportunities for ice lithography in fields such as biological, nanoengineering and microsystems, biophysics and ...
Bingdong Chang +9 more
wiley +1 more source
2-Bit/Cell Operation of Hf0.5Zr0.5O2 Based FeFET Memory Devices for NAND Applications
IEEE Journal of the Electron Devices Society, 2019 The multilevel memory performances of ferroelectric field effect transistor (FeFET) with Hf0.5Zr0.5O2 (HZO) ferroelectric thin film are investigated. First, similar retention characteristics are observed for intermediate and saturated polarization states
Binjian Zeng +6 more
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Tailoring the Properties of Functional Materials With N‐Oxides
Advanced Functional Materials, EarlyView.The properties of materials bearing N‐oxide groups are often dominated by the polar N+─O− bond. It provides hydrophilicity, selective ion‐binding, electric conductivity, or antifouling properties. Many of the underlying mechanisms have only recently been discovered, and the interest in N‐oxide materials is rapidly growing.
Timo Friedrich +5 more
wiley +1 more source