Results 101 to 110 of about 8,891 (213)

Chemical Etching of {hk0} Silicon Plates in EDP Part I: Experiments and Comparison with TMAH

Active and Passive Electronic Components, 2000
This paper deals with the anisotropic chemical etching of various silicon plates etched in EDP. Changes with orientation in geometrical features of etched surface and in the etching shape of starting circular sections are systematically investigated ...
C. R. Tellier, T. G. Leblois, A. Charbonnieras   +2 more
doaj   +1 more source

Metabolic Processes Preserved as Biosignatures in Iron-Oxidizing Microorganisms: Implications for Biosignature Detection on Mars [PDF]

Iron-oxidizing bacteria occupy a distinct environmental niche. These chemolithoautotrophic organisms require very little oxygen (when neutrophilic) or outcompete oxygen for access to Fe(II) (when acidophilic).
Emerson, David, Floyd, Melissa A. Merrill, Grubisic, Andrej, Williams, Amy J.   +3 more
core   +1 more source

Kajian Mengenai Kebersandaran Pembentukan Keadaan Potong Bawah Penjuru Terhadap Jenis Larutan Pemunar dalam Penghasilan Diafram Beralun Silikon [PDF]

, 2006
Kertas kerja ini membentangkan hasil kajian simulasi mengenai kesan jenis larutan pemunar ke atas keadaan potong bawah penjuru yang terhasil pada struktur-struktur penjuru cembung diafram beralun silikon (l00).
Majlis, Burhanuddin Yeop, Soin, Nor Hayati   +1 more
core  

Fabrication of SiO2 by anisotropic etching of silicon [PDF]

, 2011
Bakalářská práce se zabývá přípravou membrán z oxidu křemičitého (SiO2) na křemíkovém (Si) substrátu pomocí anizotropního leptání křemíku. Masky pro anizotropní leptání křemíku byly vytvořeny pomocí elektronové litografie a chemického leptání SiO2.
Balajka, Jan
core  

High channel mobility at SiO2/GaN interface with different tilt angle trench sidewalls formed by wet etching treatment

APL Materials
The development of low-resistance Gallium nitride (GaN) trench metal-oxide semiconductor (MOS) channels is required. Since the trenches are formed by dry etching, their surfaces are inevitably exposed to plasma, leading to plasma-induced damage ...
Hirohisa Hirai, Yoshinao Miura, Akira Nakajima, Shinsuke Harada   +3 more
doaj   +1 more source

Wet etching of (−102) β-Ga2O3 with tetramethylammonium hydroxide (TMAH)

Science and Technology of Advanced Materials
We investigated wet etching of (−102) β-Ga2O3 substrates using heated 25 wt% tetramethylammonium hydroxide (TMAH). The (−102) plane exhibited an etching rate that was one order of magnitude higher than those of the widely used (100), (010), (001), and ...
Takayoshi Oshima
doaj   +1 more source

Diverse organic molecules on Mars revealed by the first SAM TMAH experiment. [PDF]

Nat Commun
Williams AJ, Eigenbrode JL, Millan M, Williams RH, Mcintosh OM, Teinturier S, Roach J, Malespin C, McAdam AC, Mahaffy P, Bryk AB, Buch A, Boulesteix D, Chou L, Dworkin JP, Fox V, Franz HB, Freissinet C, Glavin DP, House CH, Johnson SS, Lewis JMT, Mojarro A, Navarro-Gonzalez R, Pozarycki C, Steele A, Summons RE, Szopa C, Thorpe MT, Vasavada AR.   +29 more
europepmc   +1 more source

Model-Guided Design and Solvent-Free Synthesis of Polysiloxanes with High Refractive Index and Low Viscosity. [PDF]

Chem Bio Eng
Zhong D, Jie S, Du M, Pan P, Shan G.
europepmc   +1 more source

A first look at paleotemperature prospects from Mg in coccolith carbonate: Cleaning techniques and culture measurements [PDF]

, 2001
Bairbakesh, Boyle, Boyle, Brown, Christine Klaas, Conte, Epstein, Heather M. Stoll, Ian Probert, J. Ignacio Garcia Alonso, Jorge Ruiz Encinar, Love, Rosenthal, Rosenthal, Stoll, Stoll, Uchida, Yair Rosenthal, Ziveri   +18 more
core   +1 more source

Wafer-Level Self-Assembly and Interface Passivation Patterning Technology for Nanomaterial-Compatible 3D MEMS Sensing Chips. [PDF]

Nanomicro Lett
Zhang Z, Zhang Y, Luo Y, Lv G, Yin J, Tan P, Duan G.   +6 more
europepmc   +1 more source