Results 101 to 110 of about 4,153 (244)

Silicon anisotropic etching in KOH and TMAH with modified surface tension

, 2009
Etching rates and morphologies of Si wafers with different crystallographic orientations etched in pure TMAH and TMAH with isopropyl alcohol have been analysed.
Zubel, Irena, Kramkowska, Malgorzata
core   +1 more source

<100> bar corner compensation for CMOS compatible anisotropic TMAH etching

, 2006
For a long time wet bulk-micromachining has been an easy and cost-effective method for fabricating silicon micro-sensors. Anisotropic wet etching is the key processing step for the fabrication of microstructures.
Zen, Mario, Margesin, Benno, R. Mukhiya, S. Kal, Bagolini, Alvise   +4 more
core   +1 more source

Dual-doped TMAH silicon etchant for microelectromechanical structures and systems applications

, 2000
Tetra-methyl ammonium-hydroxide (TMAH), is an anisotropic silicon etchant that is gaining considerable use in silicon micromachining due to its excellent silicon etch rate, etch selectivity to masking layers, degree of anisotropy, and relatively low ...
L., A. Pandy, Kahrizi M. Landsberger, Zen, Mario, Sebastiano Brida, M. Paranjape   +5 more
core  

Microfabrication : using bulk wet etching with TMAH

, 2005
In November 2002 a Microfabrication Lab was established in the physics department of McGill University to support research in nanoscience and technology. At the same time, I arrived at McGill to begin my graduate study.
Duan, Xuefeng, 1981-
core  

Infra red spectroscopy, flash pyrolysis, thermally assisted hydrolysis and methylation (THM) in the presence of tetramethylammonium hydroxide (TMAH) of cultured and sediment-derived Lingulodinium polyedrum (Dinoflagellata) cyst walls

, 2012
The macromolecular composition of dinoflagellate cyst walls is poorly understood and is usually referred to as ‘sporopollenin-like’. We have carried out micro-Fourier transform infra red (micro-FTIR) analysis of chemically untreated sediment-derived and ...
Oltmanns, S., Lewis, J., Harding, I.C., Versteegh, Gerard J.M., Blokker, Peter, Oltmanns, Sven, Kara A. Bogus, Peter Blokker, André Rochon, Bogus, Kara A., Zonneveld, K.A.F., Versteegh, G.J.M., Blokker, P., Sven Oltmanns, Karin A.F. Zonneveld, Jane Lewis, Rochon, André, Gerard J.M. Versteegh, Harding, Ian C., Rochon, A., Ian C. Harding, Lewis, Jane, Zonneveld, Karin A.F., Bogus, K.A.   +23 more
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Identification of protein remnants in insoluble geopolymers using TMAH thermochemolysis/GC-MS

, 2001
13 páginas, 5 figuras, 2 tablas.Thermochemolysis with tetramethylammonium hydroxide (TMAH) was utilized to analyze peptide-like material in insoluble residues of geochemical samples.
Hatcher, Patrick G., Knicker, Heike, Río Andrade, José Carlos del, Minard, Robert D.   +3 more
core   +1 more source

Fabrication of novel microstructures based on orientation-dependent adsorption of surfactant molecules in a TMAH solution

, 2012
In this work, the orientation-dependent adsorption of surfactant molecules on the silicon surface during etching in surfactant-added tetramethylammonium hydroxide (TMAH) is investigated.
Sato, K., Gosálvez, M. A., Pal, Prem, Hida, H., Shikida, M.   +4 more
core   +1 more source

Characterization of TMAH Silicon Etchant Using Ammomium Persulfate as an Oxidizing Agent

, 1998
Among the silicon anisotropic etchants, tetramethyl ammonium hydroxide [TMAH] is of great interest due to the absence of metal ions. Therefore using TMAH solutions at low concentrations has the advantage of being more economical, both in terms of cost ...
Guarnieri, Vittorio, Zen, Mario, Giacomozzi, Flavio, Sebastiano Brida, M. Paranjape   +4 more
core  

Low leakage and high breakdown voltage GaN-on-GaN Schottky diode by TMAH surface treatment.

International audienceIn this study, the impact of surface treatment by TMAH and HF on the electrical characteristics of GaNon-GaN Schottky diode is explored by I-V and C-V characterisation.
Kaltsounis, Thomas, Frayssinet, Eric, Cordier, Yvon, Maurya, Vishwajeet, Buckley, Julien, Alquier, Daniel, Martinez, Eugénie, Charles, Matthew, El Rammouz, Hala, Fernandes Paes Pinto Rocha, Pedro   +9 more
core   +1 more source

High channel mobility at SiO2/GaN interface with different tilt angle trench sidewalls formed by wet etching treatment

APL Materials
The development of low-resistance Gallium nitride (GaN) trench metal-oxide semiconductor (MOS) channels is required. Since the trenches are formed by dry etching, their surfaces are inevitably exposed to plasma, leading to plasma-induced damage ...
Hirohisa Hirai, Yoshinao Miura, Akira Nakajima, Shinsuke Harada   +3 more
doaj   +1 more source