Results 51 to 60 of about 8,891 (213)

Two-step Fabrication of Large Area SiO2/Si Membranes

open access: yesMedžiagotyra, 2012
Two-step fabrication technique of SiO2/Si membrane combining the deep local etching of double side polished and thermally oxidized silicon <100> wafer in tetramethylammonium hydroxide (TMAH) water solution and SF6/O2 reactive ion etching is ...
Viktoras GRIGALIŪNAS   +7 more
doaj   +1 more source

Effect of pH, milling time, and Isobam content on porous silicon nitride ceramics prepared by gel casting

open access: yesAdvanced Powder Materials, 2023
As a non-toxic copolymer of isobutylene and maleic anhydride, Isobam is successfully used as a dispersant and a gelling agent for fabricating porous Si3N4 ceramics by gel casting.
Hailing Yang   +11 more
doaj   +1 more source

Light Switchable Ionic Conductivity of Arylazopyrazole Modified Polysiloxanes

open access: yesAdvanced Materials Technologies, EarlyView.
We present a polysiloxane functionalized with a novel arylazopyrazole dye that undergoes reversible photoisomerization. Upon lithium bis(trifluoromethanesulfonyl)imide addition and UV irradiation, the polymer exhibits a shift in tan(d) toward higher frequencies and enhanced ionic conductivity.
Malte S. Beccard   +7 more
wiley   +1 more source

Effect of the Hydrodynamic Cavitation for the Treatment of Industrial Wastewater

open access: yesChemical Engineering Transactions, 2018
In the present work, the degradation of tetramethyl ammonium hydroxide (TMAH) from synthetic liquid waste of electronic industry was investigated by using hydrodynamic cavitation process.
Valentina Innocenzi   +2 more
doaj   +1 more source

InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications

open access: yesMicromachines, 2023
The main objective of this work is to demonstrate and validate the feasibility of fabricating (Al, In) GaN laser diodes with etched facets. The facets are fabricated using a two-step dry and wet etching process: inductively coupled plasma—reactive ion ...
Krzysztof Gibasiewicz   +6 more
doaj   +1 more source

3D surface topography and reflectivity of anisotropic etched silicon micromirrors for BioMEMS [PDF]

open access: yes, 2011
This paper examines wet and dry fabrication of vertical micro-mirrors in (110) silicon for use in an innovative BioMEMS integrating gripping and micro force sensing functionalities.
Le, HR, Lionis, N, Mackay, RE
core   +2 more sources

Enhancing Small Molecule Sensing With Aptameric Functionalized Nano Devices

open access: yesAdvanced Materials Technologies, EarlyView.
Unveiling an ultra‐sensitive, non‐invasive neurotransmitter sensor. For the first time, a nanoscale sensor for detecting an important neurotransmitter was demonstrated using micro‐electromechanical systems (MEMS) technology. Our approach utilized field‐effect transistor (FET)‐based readout to enable pico‐molar detection of biomarkers in sweat.
Thi Thanh Ha Nguyen   +11 more
wiley   +1 more source

Superconductor Insulator Transition in Long MoGe Nanowires

open access: yes, 2012
Properties of one-dimensional superconducting wires depend on physical processes with different characteristic lengths. To identify the process dominant in the critical regime we have studied trans- port properties of very narrow (9-20 nm) MoGe wires ...
A. Rogachev   +6 more
core   +1 more source

Robust and Thermally Stable Silicone Aerogels with Hyperconnected Network via Kinetically Optimized Hyperbranched Silane Precursors

open access: yesAdvanced Science, EarlyView.
Reactivity‐Programmed Assembly: A kinetic‐control strategy is reported for constructing hyperconnected silicone aerogels with a robust “thick‐neck” architecture. By exploiting the reactivity disparity of precursors, flexible segments are uniformly embedded within a rigid skeleton.
Aoqing Yan   +9 more
wiley   +1 more source

Low leakage and high blocking voltage GaN-on-GaN Schottky diode by TMAH surface treatment

open access: yesPower Electronic Devices and Components
In this study, the impact of surface treatment by TMAH and HF on the electrical characteristics of GaN-on-GaN Schottky diodes is examined through I–V and C–V characterizations.
Vishwajeet Maurya   +10 more
doaj   +1 more source

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