Results 201 to 210 of about 49,681 (251)
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Total ionizing dose sensitivity of function blocks in FRAM
Microelectronics Reliability, 2015Abstract The total ionizing dose (TID) sensitivity of the function blocks, including the memory array, sense amplifier, row decoder, column decoder and I/O port, of the ferroelectric random access memory (FRAM) are investigated. An X-ray microbeam is used for the selective irradiation and detailed detection.
Gu, Ke +4 more
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Total Ionizing Dose Effects in MOS Oxides and Devices [PDF]
IEEE Transactions on Nuclear Science, 2003 This paper reviews the basic physical mechanisms of the interactions of ionizing radiation with MOS oxides, including charge generation, transport, trapping and detrapping, and interface trap formation. Device and circuit effects are also discussed briefly.
T R Oldham
exaly +2 more sources
The total ionizing dose response of a DSOI 4Kb SRAM
Microelectronics Reliability, 2017Abstract A 4 K-bit SRAM with 0.2 um Double Fully-Depleted Silicon-On-Insulator (DSOI) CMOS process is designed to examine circuit total ionizing dose (TID) and the back gate bias effect. Preview researches show that MOSFET electrical parameter shift due to TID damage can be compensated by back gate bias of the FDSOI technology.
B. Li +8 more
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Total ionizing dose effects on flash memories
1998 IEEE Radiation Effects Data Workshop. NSREC 98. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.98TH8385), 2002This paper presents the results of measurements performed on two different flash memory types, NOR and NAND technologies. The data suggest that the degradation is influenced by the activation of integrated charge pump circuits. The NAND type device functionally failed at lower TID level than the NOR technology, even when the NOR device was used with ...
D.N. Nguyen, C.I. Lee, A.H. Johnston
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Total Ionizing Dose Test Facilities for Micro-Electronic Circuits
2016 IEEE Canadian Conference on Electrical and Computer Engineering (CCECE), 2016This paper describes the total ionizing dose test facility available at the University of Saskatchewan. Two Co-60 sources are available one for high and the other low dose rate radiation effects testing of electronics. The total ionizing dose performance of an operation amplifier was evaluated. The testing results compare well with previously published
D M Hiemstra, H -B Wang
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Charge yield and total ionizing dose measurements
2007 9th European Conference on Radiation and Its Effects on Components and Systems, 2007An experimental study of charge-yield of gamma and alpha radiation sources is presented. Monte-Carlo simulation is applied to explain the experimental results. Important implications of charge-yield to TID measurements using MOSFET dosimeters in space and other high energy particle environments are discussed.
Avner Haran +3 more
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The total ionizing dose response of leading-edge FDSOI MOSFETs
Microelectronics Reliability, 2018Abstract In this paper, the total ionizing dose (TID) response of Ultra-Thin SOI (UTSOI) transistor is presented. TID experiments were performed on both NMOS and PMOS transistors under three different bias configurations (ON-state, OFF-state, TG-state).
Jian Wang +10 more
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Total Ionizing Dose Effects on DRAM Data Retention Time
IEEE Transactions on Nuclear Science, 2014Dynamic random access memory (DRAM) data retention time degradation induced by radiation exposure is investigated in this paper. We present the experimental setup and the results of total ionizing dose (TID) test on a COTS SDRAM device. We observed a significant retention time reduction related to the absorbed dose and we assume radiation induced ...
Bacchini, A +3 more
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Total ionizing dose effects in shallow trench isolation oxides
Microelectronics Reliability, 2008The peaked evolution of leakage current with total ionizing dose observed in transistors in 130 nm generation technologies is studied with field oxide field effect transistors (FOXFETs) that use the shallow trench isolation as gate oxide. The overall radiation response of these structures is determined by the balance between positive charge trapped in ...
Faccio F +6 more
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Total ionizing dose reliability of thin SiO2 in PowerMOSFET devices
Microelectronics Reliability, 2007Abstract This work shows an experimental study on the reliability of PowerMOSFET devices used in satellitar application. The total irradiated dose (TID) tolerance degree of a gate oxide as a function of its thickness and growth process has been investigated.
Alessandra Cascio +2 more
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