Results 201 to 210 of about 47,573 (253)
Some of the next articles are maybe not open access.
IEEE Transactions on Nuclear Science, 1998
The standard estimates of the GEO total ionizing dose are revised to account for enhancement of the bremsstrahlung dose by high-Z layers in IC packages, IC die, and spacecraft shields.
exaly +2 more sources
The standard estimates of the GEO total ionizing dose are revised to account for enhancement of the bremsstrahlung dose by high-Z layers in IC packages, IC die, and spacecraft shields.
exaly +2 more sources
Total ionizing dose effects in MOS oxides and devices [PDF]
IEEE Transactions on Nuclear Science, 2003 This paper reviews the basic physical mechanisms of the interactions of ionizing radiation with MOS oxides, including charge generation, transport, trapping and detrapping, and interface trap formation. Device and circuit effects are also discussed briefly.
T R Oldham
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Total ionizing dose sensitivity of function blocks in FRAM
Microelectronics Reliability, 2015Abstract The total ionizing dose (TID) sensitivity of the function blocks, including the memory array, sense amplifier, row decoder, column decoder and I/O port, of the ferroelectric random access memory (FRAM) are investigated. An X-ray microbeam is used for the selective irradiation and detailed detection.
Gu, Ke +4 more
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The total ionizing dose response of a DSOI 4Kb SRAM
Microelectronics Reliability, 2017Abstract A 4 K-bit SRAM with 0.2 um Double Fully-Depleted Silicon-On-Insulator (DSOI) CMOS process is designed to examine circuit total ionizing dose (TID) and the back gate bias effect. Preview researches show that MOSFET electrical parameter shift due to TID damage can be compensated by back gate bias of the FDSOI technology.
B. Li +8 more
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Total ionizing dose effects on flash memories
1998 IEEE Radiation Effects Data Workshop. NSREC 98. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.98TH8385), 2002This paper presents the results of measurements performed on two different flash memory types, NOR and NAND technologies. The data suggest that the degradation is influenced by the activation of integrated charge pump circuits. The NAND type device functionally failed at lower TID level than the NOR technology, even when the NOR device was used with ...
D.N. Nguyen, C.I. Lee, A.H. Johnston
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Charge yield and total ionizing dose measurements
2007 9th European Conference on Radiation and Its Effects on Components and Systems, 2007An experimental study of charge-yield of gamma and alpha radiation sources is presented. Monte-Carlo simulation is applied to explain the experimental results. Important implications of charge-yield to TID measurements using MOSFET dosimeters in space and other high energy particle environments are discussed.
Avner Haran +3 more
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Total ionizing dose test facilities for micro-electronic circuits
2016 IEEE Canadian Conference on Electrical and Computer Engineering (CCECE), 2016This paper describes the total ionizing dose test facility available at the University of Saskatchewan. Two Co-60 sources are available one for high and the other low dose rate radiation effects testing of electronics. The total ionizing dose performance of an operation amplifier was evaluated. The testing results compare well with previously published
Haibin Wang +5 more
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Total ionizing dose reliability of thin SiO2 in PowerMOSFET devices
Microelectronics Reliability, 2007Abstract This work shows an experimental study on the reliability of PowerMOSFET devices used in satellitar application. The total irradiated dose (TID) tolerance degree of a gate oxide as a function of its thickness and growth process has been investigated.
Alessandra Cascio +2 more
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Total Ionizing Dose Effects in Si-Based Tunnel FETs
IEEE Transactions on Nuclear Science, 2014Total ionizing dose (TID) effects in Si-based tunnel finite element transfers (FETs) were investigated for the first time. Under 10-keV X-ray irradiation environment, along with the increase in total dose, a shift of the transfer characteristics and an increase in the interface trap density could be observed.
Lili Ding +8 more
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The total ionizing dose response of leading-edge FDSOI MOSFETs
Microelectronics Reliability, 2018Abstract In this paper, the total ionizing dose (TID) response of Ultra-Thin SOI (UTSOI) transistor is presented. TID experiments were performed on both NMOS and PMOS transistors under three different bias configurations (ON-state, OFF-state, TG-state).
Jian Wang +10 more
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