Results 221 to 230 of about 47,573 (253)

Improvement of the tolerance to total ionizing dose in SOI CMOS

2008 IEEE International SOI Conference, 2008
According to the CMOS device on SOI substrate (SOI CMOS device), we investigate the influence of holes accumulated in buried oxide film (BOX) under the radiation environment by monitoring leakage current with back bias. We confirmed that the leakage current has the colleration to total ionizing dose (TID).
Y. Domae, H. Komatsubara, H. Shindou, A. Makihara, S. Kuboyama, J. Ida   +5 more
openaire   +1 more source

Total Ionizing Dose Effects on a COTS Microcontroller

2021 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2021
Runcheng Liang, Faguo Chen, Rong Guo, Jing Zhang, Ri Zhao, Zhaoxing Liu   +5 more
openaire   +1 more source

Total ionizing dose effects in bipolar devices and circuits

IEEE Transactions on Nuclear Science, 2003
The development of the investigation of total dose effects in bipolar devices and circuits is covered over the past 40 years. There are at least four chronological stages in this field of study highlighted by the early studies on discrete transistors, the effects of total dose on linear circuits and I/sup 2/L, the effects of total dose on recessed ...
openaire   +1 more source

System on module total ionizing dose distribution modeling

2014 29th International Conference on Microelectronics Proceedings - MIEL 2014, 2014
The paper presents total ionizing dose (TID) distribution due to trapped electrons and protons at the system on module (SOM) surface. TID calculation was made in 3D_SPACE software (Specialized Electronic Systems). The main goal of this paper is a more precise definition of the radiation hardness requirements for space electronics.
A. O. Akhmetov, D. V. Boychenko, D. V. Bobrovskiy, A. I. Chumakov, O. A. Kalashnikov, A. Y. Nikiforov, P. V. Nekrasov   +6 more
openaire   +1 more source

Total Ionizing Dose and Displacement-Damage Effects in Microelectronics

MRS Bulletin, 2003
AbstractWhen exposed to radiation, the function of microelectronic devices is not only degraded by single-event phenomena but by cumulative effects. Most of the energy lost by radiation passing through semiconductors is through ionization. Buildup of charge in gate oxide layers and of interface and border traps due to ionization result in semipermanent
openaire   +1 more source

Total ionizing dose hardness of microwave electronics

2014 24th International Crimean Conference Microwave & Telecommunication Technology, 2014
O. A. Kalashnikov, V. V. Elesin, D. V. Gromov   +2 more
openaire   +1 more source

Total Ionizing Dose Effects on Current Sense Amplifiers

2021 21th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2021
Aksteiner, Niklas, Budroweit, Jan
openaire   +2 more sources

Low dose ionizing radiation effects on the immune system

Environment International, 2021
Katalin Lumniczky, Gemma Armengol, Serge M Candeias   +2 more
exaly  

Investigations on MGy Total Ionizing Dose Effects in CMOSTechnologies

2015
This work investigates MGy Total Ionizing Dose effects in CMOS technologies. Large TID-induced electrical shifts are observed in devices with thin dielectrics.
Gaillardin, M., Paillet, Philippe, Goiffon, Vincent, Martinez, Martial, Girard, Sylvain, Raine, Melanie, Marcandella, Claude, Olivier, Duhamel, Magnan, Pierre   +8 more
openaire   +1 more source

Epidemiological Studies of Low-Dose Ionizing Radiation and Cancer: Rationale and Framework for the Monograph and Overview of Eligible Studies

Journal of the National Cancer Institute Monographs, 2020
Amy Berrington DE GONZÁLEZ, Robert D Daniels, Elisabeth Cardis   +2 more
exaly