Results 211 to 220 of about 49,681 (251)

Total Ionizing Dose Effects in Si-Based Tunnel FETs

IEEE Transactions on Nuclear Science, 2014
Total ionizing dose (TID) effects in Si-based tunnel finite element transfers (FETs) were investigated for the first time. Under 10-keV X-ray irradiation environment, along with the increase in total dose, a shift of the transfer characteristics and an increase in the interface trap density could be observed.
Lili Ding, Elena Gnani, GERARDIN, SIMONE, BAGATIN, MARTA, Francesco Driussi, Pierpaolo Palestri, Luca Selmi, Cyrille Le Royer, PACCAGNELLA, ALESSANDRO   +8 more
openaire   +1 more source

Impact of total ionizing dose on the electromagnetic susceptibility of a single bipolar transistor

2011 12th European Conference on Radiation and Its Effects on Components and Systems, 2011
Space or military electronic components are subject to both electromagnetic fields and total ionizing dose. This paper deals with the electromagnetic susceptibility of a discrete low frequency transistor subject to total ionizing dose deposition. The electromagnetic susceptibility is investigated on both non-irradiated and irradiated transistors ...
Doridant, A., Jarrix, Sylvie, Raoult, Jérémy, Blain, A., Chatry, N., Calvel, P., Hoffmann, P., Dusseau, L.   +7 more
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Total Ionizing Dose effects on 4Mbit Phase Change Memory arrays

2007 9th European Conference on Radiation and Its Effects on Components and Systems, 2007
We investigate Total Ionizing Dose effects on 4Mbit Phase Change Memories (PCM) arrays. We demonstrate a high robustness of PCM against ionizing radiation. We irradiated PCM with 8-MeV electrons. Only small variations are measured in the cell distributions after irradiation.
Gasperin Alberto, Gasperin Alberto, Wrachien Nicola, Cester Andrea, Cester Andrea, Paccagnella Alessandro, Paccagnella Alessandro, Ottogalli Federica, Corda Ugo, Fuochi Piergiorgio, Lavalle Marco   +10 more
openaire   +4 more sources

Total ionizing dose effects in a SRAM-based FPGA

1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463), 2003
We have measured the effects of total ionizing dose on Xilinx XC4036X FPGAs. The FPGAs were irradiated at a dose rate of about, 0.5 krad/hr. An average total dose of 39 krad(Si) and 16 krad(Si) were absorbed by the XL-series and XLA-series FPGAs, respectively, before the power supply current increased.
D.M. MacQueen, D.M. Gingrich, N.J. Buchanan, P.W. Green   +3 more
openaire   +1 more source

Total ionizing dose effects on voltage-to-frequency converters

1998 IEEE Radiation Effects Data Workshop. NSREC 98. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.98TH8385), 2002
Three different voltage-to-frequency converters were tested to determine how ionizing radiation affected their critical specifications. All three were fabricated with bipolar technologies. A popular charge-balancing architecture converter, AD652, was most sensitive with low dose rate (LDR) due to its tight specifications.
C.I. Lee, A.H. Johnston, B.G. Rax
openaire   +1 more source

Effects of Total Dose Ionizing, Radiation on the 1802 Microprocessor

IEEE Transactions on Nuclear Science, 1977
Several versions of the 1802 CMOS microprocessor were subjected to Co-60 irradiations. Total dose data is provided for production line parts from two vendors, a specially processed radiation hard lot, and one developmental SOS unit. The increase in total dose failure level from 1 x 104 to 5 x 105 rads(Si) for the specially processed Parts proves the ...
E. E. King, R. L. Martin
openaire   +1 more source

Total Ionizing Dose Effects in Piezoelectric MEMS Relays

IEEE Transactions on Nuclear Science, 2013
This paper investigates total ionizing dose (TID) effects on the piezoelectric properties of lead zirconate titanate (PZT). The capacitance and contact voltage of thin-film, PZT-based relays were measured following incremental 60Co TID irradiations. The devices were held in several different bias conditions, during exposure.
Robert M. Proie, Ronald G. Polcawich, Cory D. Cress, Luz M. Sanchez, Alden D. Grobicki, Jeffrey S. Pulskamp, Nicolas J.-H. Roche   +6 more
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System on module total ionizing dose distribution modeling

2014 29th International Conference on Microelectronics Proceedings - MIEL 2014, 2014
The paper presents total ionizing dose (TID) distribution due to trapped electrons and protons at the system on module (SOM) surface. TID calculation was made in 3D_SPACE software (Specialized Electronic Systems). The main goal of this paper is a more precise definition of the radiation hardness requirements for space electronics.
A. O. Akhmetov, D. V. Boychenko, D. V. Bobrovskiy, A. I. Chumakov, O. A. Kalashnikov, A. Y. Nikiforov, P. V. Nekrasov   +6 more
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Improvement of the tolerance to total ionizing dose in SOI CMOS

2008 IEEE International SOI Conference, 2008
According to the CMOS device on SOI substrate (SOI CMOS device), we investigate the influence of holes accumulated in buried oxide film (BOX) under the radiation environment by monitoring leakage current with back bias. We confirmed that the leakage current has the colleration to total ionizing dose (TID).
Y. Domae, H. Komatsubara, H. Shindou, A. Makihara, S. Kuboyama, J. Ida   +5 more
openaire   +1 more source

Total Ionizing Dose Assessment of a Commercial 200V PMOSFET

2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018), 2018
Total ionizing dose testing of commercial 200 V PMOSFETs. At 100 kRad(Si), observed V t increase of ∼ 3 V for biased ON devices and increase of ∼ 1 V for biased OFF devices. The R ds_on did not degrade with dose.
Raichelle Aniceto, Randall Milanowski, Slaven Moro, Norman Hall, Bert Vermeire, Josh Shields, Kerri Cahoy   +6 more
openaire   +1 more source