Results 211 to 220 of about 47,573 (253)

Total Ionizing Dose Effects on DRAM Data Retention Time

IEEE Transactions on Nuclear Science, 2014
Dynamic random access memory (DRAM) data retention time degradation induced by radiation exposure is investigated in this paper. We present the experimental setup and the results of total ionizing dose (TID) test on a COTS SDRAM device. We observed a significant retention time reduction related to the absorbed dose and we assume radiation induced ...
Bacchini, A, Furano, G, Rovatti, M, OTTAVI, MARCO   +3 more
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Total ionizing dose effects in shallow trench isolation oxides

Microelectronics Reliability, 2008
The peaked evolution of leakage current with total ionizing dose observed in transistors in 130 nm generation technologies is studied with field oxide field effect transistors (FOXFETs) that use the shallow trench isolation as gate oxide. The overall radiation response of these structures is determined by the balance between positive charge trapped in ...
Faccio F, Barnaby HJ, Chen XJ, Fleetwood DM, Gonella L, McLain M, Schrimpf RD   +6 more
openaire   +2 more sources

Impact of total ionizing dose on the electromagnetic susceptibility of a single bipolar transistor

2011 12th European Conference on Radiation and Its Effects on Components and Systems, 2011
Space or military electronic components are subject to both electromagnetic fields and total ionizing dose. This paper deals with the electromagnetic susceptibility of a discrete low frequency transistor subject to total ionizing dose deposition. The electromagnetic susceptibility is investigated on both non-irradiated and irradiated transistors ...
Doridant, Adrien, Jarrix, Sylvie, Raoult, Jérémy, Blain, Amable, Chatry, Nathalie, Calvel, Philippe, Hoffmann, Patrick, Dusseau, Laurent   +7 more
openaire   +2 more sources

Total Ionizing Dose effects on 4Mbit Phase Change Memory arrays

2007 9th European Conference on Radiation and Its Effects on Components and Systems, 2007
We investigate Total Ionizing Dose effects on 4Mbit Phase Change Memories (PCM) arrays. We demonstrate a high robustness of PCM against ionizing radiation. We irradiated PCM with 8-MeV electrons. Only small variations are measured in the cell distributions after irradiation.
Gasperin Alberto, Gasperin Alberto, Wrachien Nicola, Cester Andrea, Cester Andrea, Paccagnella Alessandro, Paccagnella Alessandro, Ottogalli Federica, Corda Ugo, Fuochi Piergiorgio, Lavalle Marco   +10 more
openaire   +4 more sources

Total ionizing dose effects in a SRAM-based FPGA

1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463), 2003
We have measured the effects of total ionizing dose on Xilinx XC4036X FPGAs. The FPGAs were irradiated at a dose rate of about, 0.5 krad/hr. An average total dose of 39 krad(Si) and 16 krad(Si) were absorbed by the XL-series and XLA-series FPGAs, respectively, before the power supply current increased.
D.M. MacQueen, D.M. Gingrich, N.J. Buchanan, P.W. Green   +3 more
openaire   +1 more source

Total ionizing dose effects on voltage-to-frequency converters

1998 IEEE Radiation Effects Data Workshop. NSREC 98. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.98TH8385), 2002
Three different voltage-to-frequency converters were tested to determine how ionizing radiation affected their critical specifications. All three were fabricated with bipolar technologies. A popular charge-balancing architecture converter, AD652, was most sensitive with low dose rate (LDR) due to its tight specifications.
C.I. Lee, A.H. Johnston, B.G. Rax
openaire   +1 more source

Effects of Total Dose Ionizing, Radiation on the 1802 Microprocessor

IEEE Transactions on Nuclear Science, 1977
Several versions of the 1802 CMOS microprocessor were subjected to Co-60 irradiations. Total dose data is provided for production line parts from two vendors, a specially processed radiation hard lot, and one developmental SOS unit. The increase in total dose failure level from 1 x 104 to 5 x 105 rads(Si) for the specially processed Parts proves the ...
E. E. King, R. L. Martin
openaire   +1 more source

Total ionizing dose effects on triple-gate FETs

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, 2012
By radiating different amount of radiation to the pseudo-MOS transistor, the corresponding I-V characterristic curve can be obtained. Additionally, the density of interface traps and the density of trapped-oxide charges which origin from the buried oxide layer of the SOI material while under radiating can be obtained using the middle band voltage ...
Shi-Yao Liu, Wei He, Jian-Min Cao, Si-Wen Huang, Xiao-Jin Zhao   +4 more
openaire   +1 more source

Total Ionizing Dose Effects in Piezoelectric MEMS Relays

IEEE Transactions on Nuclear Science, 2013
This paper investigates total ionizing dose (TID) effects on the piezoelectric properties of lead zirconate titanate (PZT). The capacitance and contact voltage of thin-film, PZT-based relays were measured following incremental 60Co TID irradiations. The devices were held in several different bias conditions, during exposure.
Robert M. Proie, Ronald G. Polcawich, Cory D. Cress, Luz M. Sanchez, Alden D. Grobicki, Jeffrey S. Pulskamp, Nicolas J.-H. Roche   +6 more
openaire   +1 more source

Total ionizing dose effects on digital micromirror devices

Journal of Astronomical Telescopes, Instruments, and Systems, 2020
There is interest in deploying digital micromirror devices (DMDs) in space for use in multi-object spectrometers, but the devices must first be qualified for space deployment. An environmental test campaign has been carried out on eXtended Graphics Array (XGA) DMDs to qualify the devices for space deployment.
Kathleen Oram, Zoran Ninkov, Alexis Irwin, Dmitry Vorobiev, Martin Carts   +4 more
openaire   +1 more source