Quantum Thermal Transistor. [PDF]
Physical Review Letters, 2016 We demonstrate that a thermal transistor can be made up with a quantum system of three interacting subsystems, coupled to a thermal reservoir each. This thermal transistor is analogous to an electronic bipolar one with the ability to control the thermal ...
K. Joulain +3 more
semanticscholar +10 more sources
Hybrid Pass Transistor Logic with Ambipolar Transistors [PDF]
IEEE Transactions on Circuits and Systems I: Regular Papers, 2020 In comparison to the conventional complementary pull-up and pull-down logic structure, the pass transistor logic (PTL) family reduces the number of transistors required to perform logic functions, thereby reducing both area and power consumption. However, this logic family requires inter-stage inverters to ensure signal integrity in cascaded logic ...
Xuan Hu +3 more
arxiv +6 more sources
All‐Solid‐State Synaptic Transistor with Ultralow Conductance for Neuromorphic Computing
Advanced Functional Materials, 2018 Electronic synaptic devices are important building blocks for neuromorphic computational systems that can go beyond the constraints of von Neumann architecture.
Dashan Shang +2 more
exaly +2 more sources
Indirect Thermographic Measurement of the Temperature of a Transistor Die during Pulse Operation [PDF]
SensorsThis paper presents aspects related to the indirect thermographic measurement of a C2M0280120D transistor in pulse mode. The tested transistor was made on the basis of silicon carbide and is commonly used in many applications.
Arkadiusz Hulewicz +2 more
doaj +2 more sources
Author Correction: A tunable multi-timescale Indium-Gallium-Zinc-Oxide thin-film transistor neuron towards hybrid solutions for spiking neuromorphic applications [PDF]
Communications EngineeringMauricio Velazquez Lopez +7 more
doaj +2 more sources
GCN-RL Circuit Designer: Transferable Transistor Sizing with Graph Neural Networks and Reinforcement Learning [PDF]
Design Automation Conference, 2020 Automatic transistor sizing is a challenging problem in circuit design due to the large design space, complex performance tradeoffs, and fast technology advancements.
Hanrui Wang +6 more
semanticscholar +1 more source
High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures [PDF]
Nature Electronics 5, 37 (2022), 2021 Field-effect transistors made of wide-bandgap semiconductors can operate at high voltages, temperatures and frequencies with low energy losses, and have been of increasing importance in power and high-frequency electronics. However, the poor performance of p-channel transistors compared with that of n-channel transistors has constrained the production ...
arxiv +1 more source
Chemosensors, 2023 A carbon dot-functionalized solution-gated graphene transistor (CD-SGGT) was designed and prepared via the modification of CDs on the gate of SGGT. The above CDs were hydrothermally synthesized using DL-thioctic acid and triethylenetramine as C, N and S ...
Zhanpeng Ren +9 more
doaj +1 more source
Communications, 2023 This study discusses the automated visual inspection of electronic boards used in the mass production of power electronics equipment. Soldering splashes, produced during the necessary manufacturing stages, can affect the hybrid power semiconductor ...
Dušan Koniar +5 more
doaj +1 more source
Recent Progress in Contact Engineering of Field-Effect Transistor Based on Two-Dimensional Materials
Nanomaterials, 2022 Two-dimensional (2D) semiconductors have been considered as promising candidates to fabricate ultimately scaled field-effect transistors (FETs), due to the atomically thin thickness and high carrier mobility.
Jialei Miao +3 more
doaj +1 more source