Results 1 to 10 of about 368,201 (304)
Coulomb blockade in a Si channel gated by an Al single-electron transistor
, 2007 We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, we observe oscillations in the conductance associated ...
Brown, K. R., Kane, B. E., Sun, L.
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IEEE Journal of the Electron Devices Society, 2015 A high performance gate-all-around (GAA) junctionless (JL) polycrystalline silicon nanowire (poly-Si NW) transistor with channel width of 12 nm, channel thickness of 45 nm, and gate length of 20 nm has been successfully demonstrated, based on a ...
Tung-Yu Liu +2 more
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Enhanced electrodynamic gating in two-dimensional transistors using ferroelectric capping
Nano Express, 2023 Two-dimensional (2D) materials such as semiconductors and ferroelectrics are promising for future energy-efficient logic devices because of their extraordinary electronic properties at atomic thickness.
Hemendra Nath Jaiswal +10 more
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Multiple facets of tightly coupled transducer-transistor structures [PDF]
, 2015 The ever increasing demand for data processing requires different paradigms for electronics. Excellent performance capabilities such as low power and high speed in electronics can be attained through several factors including using functional materials ...
Dahiya, Ravinder, Heidari, Hadi
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Transistor-Level Synthesis of Pipeline Analog-to-Digital Converters Using a Design-Space Reduction Algorithm [PDF]
, 2011 A novel transistor-level synthesis procedure for pipeline ADCs is presented. This procedure is able to directly map high-level converter specifications onto transistor sizes and biasing conditions.
Delgado Restituto, Manuel +2 more
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Optical Transistor for an Amplification of Radiation in a Broadband THz Domain [PDF]
, 2020 We propose a new type of optical transistor for a broadband amplification of THz radiation. It is made of a graphene--superconductor hybrid, where electrons and Cooper pairs couple by Coulomb forces. The transistor operates via the propagation of surface
Kusmartsev, Fedor V. +3 more
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Communications EngineeringSpiking neural network algorithms require fine-tuned neuromorphic hardware to increase their effectiveness. Such hardware, mainly digital, is typically built on mature silicon nodes.
Mauricio Velazquez Lopez +7 more
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Recent Progress in Contact Engineering of Field-Effect Transistor Based on Two-Dimensional Materials
Nanomaterials, 2022 Two-dimensional (2D) semiconductors have been considered as promising candidates to fabricate ultimately scaled field-effect transistors (FETs), due to the atomically thin thickness and high carrier mobility.
Jialei Miao +3 more
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Hybrid power semiconductor [PDF]
, 1985 The voltage rating of a bipolar transistor may be greatly extended while at the same time reducing its switching time by operating it in conjunction with FETs in a hybrid circuit.
Chen, D. Y.
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Trends and challenges in VLSI technology scaling towards 100 nm [PDF]
, 2002 Summary form only given. Moore's Law drives VLSI technology to continuous increases in transistor densities and higher clock frequencies. This tutorial will review the trends in VLSI technology scaling in the last few years and discuss the challenges ...
Nauta, B. +3 more
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