Results 1 to 10 of about 146,638 (191)

SnO Nanosheet Transistor with Remarkably High Hole Effective Mobility and More than Six Orders of Magnitude On-Current/Off-Current [PDF]

Nanomaterials
Using novel SiO2 surface passivation and ultraviolet (UV) light anneal, a 12 nm thick SnO p-type FET (pFET) shows hole effective mobilities (µeff) of more than 100 cm2/V·s and 31.1 cm2/V·s at hole densities (Qh) of 1 × 1011 and 5 × 1012 cm−2 ...
Kuan-Chieh Chen, Jiancheng Wu, Pheiroijam Pooja, Albert Chin   +3 more
doaj   +2 more sources

PZT Ferroelectric Synapse TFT With Multi-Level of Conductance State for Neuromorphic Applications

IEEE Access, 2021
To fundamentally solve the bottleneck of Von Neumann’s computing architecture, a neuromorphic thin-film transistor (NTFT) employing Pb(Zr, Ti)O3 (PZT) was investigated.
Dongsu Kim, Su Jin Heo, Goeun Pyo, Hong Soo Choi, Hyuk-Jun Kwon, Jae Eun Jang   +5 more
doaj   +1 more source

High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures [PDF]

Nature Electronics 5, 37 (2022), 2021
Field-effect transistors made of wide-bandgap semiconductors can operate at high voltages, temperatures and frequencies with low energy losses, and have been of increasing importance in power and high-frequency electronics. However, the poor performance of p-channel transistors compared with that of n-channel transistors has constrained the production ...
arxiv   +1 more source

Low-Dimensional-Materials-Based Flexible Artificial Synapse: Materials, Devices, and Systems

Nanomaterials, 2023
With the rapid development of artificial intelligence and the Internet of Things, there is an explosion of available data for processing and analysis in any domain.
Qifeng Lu, Yinchao Zhao, Long Huang, Jiabao An, Yufan Zheng, Eng Hwa Yap   +5 more
doaj   +1 more source

A Novel Si Nanosheet Channel Release Process for the Fabrication of Gate-All-Around Transistors and Its Mechanism Investigation

Nanomaterials, 2023
The effect of the source/drain compressive stress on the mechanical stability of stacked Si nanosheets (NS) during the process of channel release has been investigated.
Xin Sun, Dawei Wang, Lewen Qian, Tao Liu, Jingwen Yang, Kun Chen, Luyu Wang, Ziqiang Huang, Min Xu, Chen Wang, Chunlei Wu, Saisheng Xu, David Wei Zhang   +12 more
doaj   +1 more source

Rotating Gate-Driven Solution-Processed Triboelectric Transistors

Sensors, 2022
Among various energy harvesting technologies, triboelectricity is an epoch-making discovery that can convert energy loss caused by the mechanical vibration or friction of parts into energy gain.
Hyunji Shin, Dae Yu Kim
doaj   +1 more source

Natural Organic Materials Based Memristors and Transistors for Artificial Synaptic Devices in Sustainable Neuromorphic Computing Systems

Micromachines, 2023
Natural organic materials such as protein and carbohydrates are abundant in nature, renewable, and biodegradable, desirable for the construction of artificial synaptic devices for emerging neuromorphic computing systems with energy efficient operation ...
Md Mehedi Hasan Tanim, Zoe Templin, Feng Zhao   +2 more
doaj   +1 more source

Analysis and research of methods of linearization of the transfer function of precision semiconductor temperature sensors

Фізика і хімія твердого тіла, 2020
The analysis of the nonlinearity of the transfer function of primary temperature transducers based on transistor structures has been performed. It’s shown that the quadratic component of the transfer function creates a significant nonlinearity error up ...
O. V. Boyko, Z. Y. Hotra
doaj   +1 more source

Investigation of Limitations in the Detection of Antibody + Antigen Complexes Using the Silicon-on-Insulator Field-Effect Transistor Biosensor

Sensors, 2023
The SOI-FET biosensor (silicon-on-insulator field-effect transistor) for virus detection is a promising device in the fields of medicine, virology, biotechnology, and the environment.
Vladimir Generalov, Anastasia Cheremiskina, Alexander Glukhov, Victoria Grabezhova, Margarita Kruchinina, Alexander Safatov   +5 more
doaj   +1 more source

On-Chip Integration of a Plasmonic FET Source and a Nano-Patch Antenna for Efficient Terahertz Wave Radiation

Nanomaterials, 2023
Graphene-based Field-Effect Transistors (FETs) integrated with microstrip patch antennas offer a promising approach for terahertz signal radiation. In this study, a dual-stage simulation methodology is employed to comprehensively investigate the device’s
Justin Crabb, Xavier Cantos-Roman, Gregory Aizin, Josep Miquel Jornet   +3 more
doaj   +1 more source