Results 121 to 130 of about 679,929 (398)

Coaxial inverted geometry transistor having buried emitter [PDF]

, 1973
The invention relates to an inverted geometry transistor wherein the emitter is buried within the substrate. The transistor can be fabricated as a part of a monolithic integrated circuit and is particularly suited for use in applications where it is ...
Cress, S. B., Dunn, W. R., Hruby, R. J.
core   +1 more source

Yield-driven power-delay-optimal CMOS full-adder design complying with automotive product specifications of PVT variations and NBTI degradations [PDF]

, 2016
We present the detailed results of the application of mathematical optimization algorithms to transistor sizing in a full-adder cell design, to obtain the maximum expected fabrication yield.
Abbas, Zia, Olivieri, Mauro, Ripp, Andreas   +2 more
core   +1 more source

Deterministic Writing of Field‐Free and Unipolar Spin‐Transfer Torque Magnetic Random‐Access Memory

Advanced Functional Materials, EarlyView.
Deterministic unipolar‐switching STT‐MRAM with field‐free operation is experimentally demonstrated. The device features a compact 4F2 cell architecture using a diode as the access device and a single magnetic tunneling junction. Unlike conventional bipolar switching STT‐MRAM requiring a three‐terminal access transistor in the array, this design offers ...
Ming‐Chun Hong, Ching Shih, Guan‐Long Chen, Yu‐Chen Hsin, Chen‐Yu Yang, Hsin‐Han Lee, Kuan‐Ming Chen, Yu‐Ho Kao, Tsai‐Yu Wu, Chiao‐Yun Lo, Sin‐You Huang, Cheng‐Yi Shih, Shan‐Yi Yang, I‐Jung Wang, Yao‐Jen Chang, Shih‐Ching Chiu, Yi‐Hui Su, Chih‐Yao Wang, Jeng‐Hua Wei, Shyh‐Shyuan Sheu, Wei‐Chung Lo, Shih‐Chieh Chang, Tuo‐Hung Hou   +22 more
wiley   +1 more source

A New Heterostructure Junctionless Tunnel Field Effect Transistor with Silicon-on-Nothing Technique for DC Parameter Improvement [PDF]

مجله مدل سازی در مهندسی
In this paper, a novel heterostructure junctionless tunnel field effect transistor with silicon-on-nothing technology (SON HS-JLTFET) is proposed. The proposed device has two advantages over conventional JLTFET.
Amin Vanak, Amir Amini
doaj   +1 more source

Two-dimensional materials and their prospects in transistor electronics.

Nanoscale, 2015
During the past decade, two-dimensional materials have attracted incredible interest from the electronic device community. The first two-dimensional material studied in detail was graphene and, since 2007, it has intensively been explored as a material ...
F. Schwierz, J. Pezoldt, R. Granzner
semanticscholar   +1 more source

Resonant tunneling through a macroscopic charge state in a superconducting SET transistor

, 1997
We predict theoretically and observe in experiment that the differential conductance of a superconducting SET transistor exhibits a peak which is a complete analogue in a macroscopic system of a standard resonant tunneling peak associated with tunneling ...
A. J. Manninen, A. N. Korotkov, A. N. Korotkov, A. N. Korotkov, C. Pasquier, D. V. Averin, D. V. Averin, D. V. Averin, D. V. Averin, H. Schoeller, J. P. Pekola, K. K. Likharev, M. Tinkham, P. Lafarge, Yu. V. Nazarov   +14 more
core   +3 more sources

Ultrasoft Iontronics: Stretchable Diodes Enabled by Ionically Conductive Bottlebrush Elastomers

Advanced Functional Materials, EarlyView.
This work introduces a solvent‐free, ultrasoft, and stretchable ionic diode based on oppositely charged bottlebrush elastomers (BBEs). The BBE diode exhibits an ultralow Young's modulus (<23 kPa), a high rectification ratio of 46, and stretchability over 400%.
Xia Wu, Pengfei Xu, Zefang Zhang, Qi Yang, Xi Huang, Peng Pan, Xinyu Liu   +6 more
wiley   +1 more source

Native Lignin Migration and Clustering in Wood: Superhydrophobic, Antimold, and Tribonegative Layers for Rain‐Driven Electrification

Advanced Functional Materials, EarlyView.
This study proposes a sustainable solution for rainwater‐driven energy harvesting by harnessing the intrinsic properties of lignin in wood. The first demonstration of an all‐wood tribonegative material for liquid–solid triboelectric nanogenerators is presented, eliminating the need for fluorine‐containing polymers and functional additives. Abstract The
Xuetong Shi, Ran Bi, Xin Shu, Peipei Wang, Yeedo Chun, Zhixiang Chen, Chris Zhou, Yi Lu, Orlando J. Rojas   +8 more
wiley   +1 more source

A superconducting transistor [PDF]

Applied Physics Letters, 1978
A three-film superconducting tunneling device, analogous to a semiconductor transistor is presented, including a theoretical description and experimental results showing a current gain of 4. Much larger current gains are shown to be feasible. Such a development is particularly interesting because of its novelty and the striking analogies with the ...
openaire   +3 more sources

Rf-induced transport of Cooper pairs in superconducting single electron transistors in a dissipative environment

, 2003
We investigate low-temperature and low-voltage-bias charge transport in a superconducting Al single electron transistor in a dissipating environment, realized as on-chip high-ohmic Cr microstrips.
A. B. Zorin, Averin D. V., Averin D. V., Brink A. M. v. d., Ingold G. L., Ingold G. L., J. Niemeyer, Kycia J. B., Lafarge P., Lotkhov S. V., Männik J., S. A. Bogoslovsky, S. V. Lotkhov, Steinbach A., Tuominen M. T.   +14 more
core   +1 more source