Results 141 to 150 of about 679,929 (398)
Study of Parameters Affecting Breakdown Voltage of Bipolar Static Induction Transistor
Известия высших учебных заведений России: Радиоэлектроника, 2017 The article considers structural and technological parameters affecting breakdown voltage of a BSIT transistor cell. The main objective of the scientific research in that field is optimization of manufacturing techniques of power electronics transistor ...
T. A. Ismailov +2 more
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TX-0, a transistor computer with a 256 by 256 memory [PDF]
, 1957 J. L. Mitchell, K. H. Olsen
openalex +1 more source
Formation of 2D Electron Gas at a Non‐Polar Perovskite Oxide Interface: SrHfO3/BaSnO3
Advanced Functional Materials, EarlyView.Through experiments and Poisson‐Schrödinger simulations, 2D electron gas formed at the non‐polar SrHfO3/BaSnO3 interface is observed. A large conduction band offset enables modulation doping by the intrinsic deep donors in SrHfO3, resulting in carrier confinement in BaSnO3 without relying on interfacial polarization or termination‐layer engineering ...
Jongkyoung Ko +5 more
wiley +1 more source
A Transistor Trigger Circuit [PDF]
, 1949 Herbert J. Reich, Robert L. Ungvary
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Journal of Physics: Condensed Matter, 2015 We describe the first implementation of a coupled atom transistor where two shallow donors (P or As) are implanted in a nanoscale silicon nanowire and their electronic levels are controlled with three gate voltages. Transport spectroscopy through these donors placed in series is performed both at zero and microwave frequencies.
Jehl, Xavier +11 more
openaire +5 more sources
Atmospheric Doping of Stretchable Polymer Semiconductors for Skin Electronics
Advanced Functional Materials, EarlyView.An atmospheric doping system using oxygen molecules in air as dopants is introduced for stretchable polymer semiconductors. The chemisorbed oxygen molecules act as acceptor, lead to increase not only the hole concentration of the semiconductor film over two orders of magnitude (3.37 × 1017 cm−3) but also electrical properties of the field‐effect ...
Min Woo Jeong +7 more
wiley +1 more source
Semiconductors and Transistors [PDF]
Nature, 1958 Les Semiconducteurs Par Prof. P. Aigrain et F. Englert. (Monographies Dunod.) Pp. x + 203. (Paris: Dunod, 1958.) 980 francs. Les Semiconducteurs Electroniques Introduction a la Physique des Redresseurs et des Transistors. Par Dr. E. Spenke. Traduit par L. Godefroy. Pp. xx + 349. (Paris: Dunod, 1959.) 5,600 francs. The Properties, Physics, and Design of
openaire +2 more sources
Method for analyzing radiation sensitivity of integrated circuits [PDF]
, 1979 A method for analyzing the radiation sensitivity of an integrated circuit is described to determine the components. The application of a narrow radiation beam to portions of the circuit is considered.
Gauthier, M. K., Stanley, A. G.
core +1 more source
Advanced Functional Materials, EarlyView.Herein, the synthesis of Ta₂Pd₃S₈ nanowires is reported via scalable liquid cascade exfoliation and their integration into high‐mobility field‐effect transistors (FETs) and sensitive photodetectors, achieving carrier mobility of up to 27.3 cm2 V⁻¹ s⁻¹ and responsivities of 322.40 A W⁻¹ and 1.85 mA W⁻¹ for single nanowire and network devices ...
Kyung Hwan Choi +13 more
wiley +1 more source