Results 61 to 70 of about 368,201 (304)

Design of Cryogenic SiGe Low-Noise Amplifiers [PDF]

open access: yes, 2007
This paper describes a method for designing cryogenic silicon-germanium (SiGe) transistor low-noise amplifiers and reports record microwave noise temperature, i.e., 2 K, measured at the module connector interface with a 50-Ω generator.
Bardin, Joseph C.   +2 more
core  

Transistor Switches using Active Piezoelectric Gate Barriers

open access: yes, 2015
This work explores the consequences of introducing a piezoelectric gate barrier in a normal field-effect transistor. Because of the positive feedback of strain and piezoelectric charge, internal charge amplification occurs in such an electromechanical ...
Ajoy, Arvind   +3 more
core   +1 more source

Formation of 2D Electron Gas at a Non‐Polar Perovskite Oxide Interface: SrHfO3/BaSnO3

open access: yesAdvanced Functional Materials, EarlyView.
Through experiments and Poisson‐Schrödinger simulations, 2D electron gas formed at the non‐polar SrHfO3/BaSnO3 interface is observed. A large conduction band offset enables modulation doping by the intrinsic deep donors in SrHfO3, resulting in carrier confinement in BaSnO3 without relying on interfacial polarization or termination‐layer engineering ...
Jongkyoung Ko   +5 more
wiley   +1 more source

Transistor circuit increases range of logarithmic current amplifier [PDF]

open access: yes, 1966
Circuit increases the range of a logarithmic current amplifier by combining a commercially available amplifier with a silicon epitaxial transistor.
Gilmour, G.
core   +1 more source

Demonstration of an All‐Optical AND Gate Mediated by Photochromic Molecules

open access: yesAdvanced Functional Materials, EarlyView.
A logic AND gate that runs on photons is demonstrated. It relies on two spatially separated photochromic molecules that work in tandem. Abstract The realization of a photonic logic AND gate, i.e. a logic AND gate that runs on photons rather than electrons, and where all steps are controlled by light, is demonstrated. In a proof‐of‐principle experiment,
Heyou Zhang   +7 more
wiley   +1 more source

WSe2 2D p‐type semiconductor‐based electronic devices for information technology: Design, preparation, and applications

open access: yesInfoMat, 2020
The pioneering exfoliation of monolayer tungsten diselenide has greatly inspired researchers toward semiconducting applications. WSe2 belongs to a family of transition‐metal dichalcogenides.
Qilin Cheng   +15 more
doaj   +1 more source

Ultra-stable oscillator with complementary transistors [PDF]

open access: yes, 1974
A high frequency oscillator, having both good short and long term stability, is formed by including a piezoelectric crystal in the base circuit of a first bi-polar transistor circuit, the bi-polar transistor itself operated below its transitional ...
Kleinberg, L. L.
core   +1 more source

Cooper-pair qubit and Cooper-pair electrometer in one device

open access: yes, 2001
An all-superconductor charge qubit enabling a radio-frequency readout of its quantum state is described. The core element of the setup is a superconducting loop which includes the single-Cooper-pair (Bloch) transistor.
A.B Zorin   +27 more
core   +1 more source

Laser‐Induced Graphene from Waste Almond Shells

open access: yesAdvanced Functional Materials, EarlyView.
Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova   +9 more
wiley   +1 more source

Single hole transistor in a p-Si/SiGe quantum well

open access: yes, 2000
A single hole transistor is patterned in a p-Si/SiGe quantum well by applying voltages to nanostructured top gate electrodes. Gating is achieved by oxidizing the etched semiconductor surface and the mesa walls before evaporation of the top gates ...
C. David   +8 more
core   +1 more source

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