Results 61 to 70 of about 335,727 (374)
Advanced Functional Materials, EarlyView.Self‐aligned gate transistors are developed with a single‐step dielectric passivation and fine‐tuning of source/drain electrode work function using phosphonic acid self‐assembled monolayers (SAM). This transistor architecture minimizes overlap capacitances and access resistance.
Linqu Luo +16 more
wiley +1 more source
DEVELOPMENT OF HUMIDITY MEASURER OF CUTTING MATERIALS [PDF]
Biomedicinskaâ Inženeriâ i Èlektronika, 2017 The meter of moisture content of bulk materials is developed, which is characterized by high reliability and relatively low cost. Due to the improvement of the analogue circuit, the average lifespan of the elements of the circuit diagram and the ...
Litvinenko V.M., Andrienko A.O.
doaj +1 more source
High-$κ$ field-effect transistor with copper-phthalocyanine [PDF]
, 2011 The use of SrTiO$_3$ dielectrics as high-permittivity insulator in organic thin film field effect transistors (FET) is evaluated. Field-effect transistors with sputtered SrTiO$_3$ and copper-phthalocyanine (CuPc) as semiconducting layer were fabricated. The device preparation was performed in-situ in an ultra high vacuum chamber system.
arxiv +1 more source
Hybrid power semiconductor [PDF]
, 1985 The voltage rating of a bipolar transistor may be greatly extended while at the same time reducing its switching time by operating it in conjunction with FETs in a hybrid circuit.
Chen, D. Y.
core +1 more source
Advanced Functional Materials, EarlyView.A materials and device design concept that comprises a self‐assembled ultra‐thin epitaxial ion‐transporting layer, an amorphous oxide overcoat oxygen‐blocking layer, and a partial filament formed during an electroforming step is proposed for low‐current multilevel resistive switching devices.
Ming Xiao +17 more
wiley +1 more source
Low-Frequency 1/f Noise in MoS2 Thin-Film Transistors: Comparison of Single and Multilayer Structures [PDF]
IEEE Electron Device Letters, 36, 517 (2015), 2015 We report on the transport and low-frequency noise measurements of MoS2 thin-film transistors with "thin" (2-3 atomic layers) and "thick" (15-18 atomic layers) channels. The back-gated transistors made with the relatively thick MoS2 channels have advantages of the higher electron mobility and lower noise level.
arxiv +1 more source
Yield-driven power-delay-optimal CMOS full-adder design complying with automotive product specifications of PVT variations and NBTI degradations [PDF]
, 2016 We present the detailed results of the application of mathematical optimization algorithms to transistor sizing in a full-adder cell design, to obtain the maximum expected fabrication yield.
Abbas, Zia +2 more
core +1 more source
Advanced Functional Materials, EarlyView.This work establishes a general theory of the current transient of ionic‐electronic transistors under a step of gate voltage. The dominant effect is a transient charging of the channel by diffusion of ions. The additional influence of electrolyte capacitance and resistance splits the fundamental time constant of diffusion into two different components.
Juan Bisquert, Nir Tessler
wiley +1 more source
International Journal of Nanomedicine, 2017 Hyun Woo Son,1,* Minhong Jeun,1,* Jaewon Choi,1,2 Kwan Hyi Lee1,2 1Center for Biomaterials, Biomedical Research Institute, Korea Institute of Science and Technology, Seoul, 2Department of Biomedical Engineering, Korea University of Science and ...
Son HW, Jeun M, Choi J, Lee KH
doaj
Electrically controlled spin-transistor operation in helical magnetic field [PDF]
, 2015 A proposal of electrically controlled spin transistor in helical magnetic field is presented. In the proposed device, the transistor action is driven by the Landau-Zener transitions that lead to a backscattering of spin polarized electrons and switching the transistor into the high-resistance state (off state). The on/off state of the transistor can be
arxiv +1 more source