Results 61 to 70 of about 369,729 (357)

Quantum Thermal Transistor [PDF]

open access: yesPhysical Review Letters, 2016
We demonstrate that a thermal transistor can be made up with a quantum system of three interacting subsystems, coupled to a thermal reservoir each. This thermal transistor is analogous to an electronic bipolar one with the ability to control the thermal currents at the collector and at the emitter with the imposed thermal current at the base.
Joulain, Karl   +3 more
openaire   +5 more sources

Engineering a Spin‐Orbit Bandgap in Graphene‐Tellurium Heterostructures

open access: yesAdvanced Functional Materials, EarlyView.
Tellurium intercalation in epitaxial graphene on Ir(111) enables the emergence of a spin–orbit‐induced bandgap with energy spin splitting. By combining STM, ARPES, spin‐resolved ARPES, and DFT, two structural phases are identified, both exhibiting tunable electronic doping.
Beatriz Muñiz Cano   +14 more
wiley   +1 more source

DEVELOPMENT OF HUMIDITY MEASURER OF CUTTING MATERIALS [PDF]

open access: yesBiomedicinskaâ Inženeriâ i Èlektronika, 2017
The meter of moisture content of bulk materials is developed, which is characterized by high reliability and relatively low cost. Due to the improvement of the analogue circuit, the average lifespan of the elements of the circuit diagram and the ...
Litvinenko V.M., Andrienko A.O.
doaj   +1 more source

An algorithm for transistor sizing in CMOS circuits [PDF]

open access: yes, 1989
This paper describes a novel algorithm for automatic transistor sizing which is one technique for improving timing performance in CMOS circuits. The sizing algorithm is used to minimize area and power subject to timing constraints.
Gajski, Daniel   +2 more
core  

A simple and controlled single electron transistor based on doping modulation in silicon nanowires

open access: yes, 2006
A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films.
Deleonibus, S.   +5 more
core   +1 more source

Spectroelectrochemical Determination of Förster Radii for Triplet‐Polaron Quenching in Phosphorescent Organic Light‐Emitting Diodes

open access: yesAdvanced Functional Materials, EarlyView.
Phosphorescent OLEDs suffer from efficiency roll‐off due to triplet‐polaron quenching (TPQ). This study demonstrates for a large set of host‐guest combinations a spectroelectrochemical method to measure the absorption of charged molecules, enabling determining TPQ Förster radii (2.5–4 nm) from the spectral overlap.
Stan E. A. Jaspars   +5 more
wiley   +1 more source

Design of Cryogenic SiGe Low-Noise Amplifiers [PDF]

open access: yes, 2007
This paper describes a method for designing cryogenic silicon-germanium (SiGe) transistor low-noise amplifiers and reports record microwave noise temperature, i.e., 2 K, measured at the module connector interface with a 50-Ω generator.
Bardin, Joseph C.   +2 more
core  

Patterned Assembly of Transition Metal Dichalcogenide/Graphene Heterostructures via Direct Laser Writing

open access: yesAdvanced Functional Materials, EarlyView.
The fabrication of patterned transition metal dichalcogenide (TMD)/graphene heterostructures via direct laser writing reveals new interface chemistry and enables efficient, customizable assembly. Selective laser irradiation of functionalized TMD/graphene triggers localized reactions, forming chemically modified interfaces.
Xin Chen   +12 more
wiley   +1 more source

An economical arterial-pulse-wave transducer [PDF]

open access: yes, 1973
Transducer records arterial pulses externally. Device uses thin plastic membrane which is fluid coupled to pressure sensitive transistor. Transistor is connected to amplifier which, in turn, is connected to recorder.
Chen, W., Gorelick, D., Kim, C.
core   +1 more source

Electrically controlled spin-transistor operation in helical magnetic field

open access: yes, 2015
A proposal of electrically controlled spin transistor in helical magnetic field is presented. In the proposed device, the transistor action is driven by the Landau-Zener transitions that lead to a backscattering of spin polarized electrons and switching ...
Adamowski, J., Wójcik, P.
core   +1 more source

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