Results 81 to 90 of about 368,201 (304)

SnO Nanosheet Transistor with Remarkably High Hole Effective Mobility and More than Six Orders of Magnitude On-Current/Off-Current

Nanomaterials
Using novel SiO2 surface passivation and ultraviolet (UV) light anneal, a 12 nm thick SnO p-type FET (pFET) shows hole effective mobilities (µeff) of more than 100 cm2/V·s and 31.1 cm2/V·s at hole densities (Qh) of 1 × 1011 and 5 × 1012 cm−2 ...
Kuan-Chieh Chen, Jiancheng Wu, Pheiroijam Pooja, Albert Chin   +3 more
doaj   +1 more source

Tuning of SnS Thin Film Conductivity on Annealing in an Open Air Environment for Transistor Application

East European Journal of Physics, 2020
The study aimed at enhancement and optimisation of SnS conductivity via annealing for field effect transistor’s semiconductor channel layer application. Interstitials and vacancies in SnS films are known to cause carrier traps which limit charge carriers
Thomas Daniel, Uno Uno, Kasim Isah, Umaru Ahmadu   +3 more
doaj   +1 more source

Gated PN Junction in Ambipolar MoS2 for Superior Self‐Powered Photodetection

Advanced Functional Materials, EarlyView.
A high‐quality gated pn junction based on ambipolar molybdenum disulfide (MoS2) is demonstrated by employing a partial‐gate structure and a Pt bottom contact that forms a semi‐van der Waals interface, facilitating efficient hole injection into the channel.
Jaeha Hwang, Jungi Song, Hanbyeol Jang, Yongwook Seok, Jiwi Park, Suyeon Lee, Jun‐Hyeok Choi, Gyeongsu Lee, Kenji Watanabe, Takashi Taniguchi, Byoung Hun Lee, Kyoungsik Yu, Kayoung Lee   +12 more
wiley   +1 more source

Electrically Binary and Ternary Convertible CMOS Inverter and Logic Gate Using Complementary Field‐Effect Transistors Based on Vertically Stacked MoS2/WSe2 n‐/p‐ Field‐Effect Transistors

Advanced Functional Materials, EarlyView.
In this work, a reconfigurable T‐CMOS inverter based on vertically stacked MoS2 and WSe2 MOSFETs with a gate‐tunable MoS2 resistor, enabling stable ternary logic, is demonstrated. The T‐CMOS inverter supports electrical switching between ternary and binary modes and is further extended to implement ternary NAND (NMIN) and NOR (NMAX) logic gates ...
Changwook Lee, Dongyoung Kim, Eunyeong Yang, Jiwon Ma, Kibum Kang, Jiwon Chang   +5 more
wiley   +1 more source

Thermal transistor: Heat flux switching and modulating

, 2008
Thermal transistor is an efficient heat control device which can act as a heat switch as well as a heat modulator. In this paper, we study systematically one-dimensional and two-dimensional thermal transistors.
Aoki K., Braun O. M., Chang C. W., Chang C. W., Donadio D., Hu B., Hu B., Hu B., Lan J., Li B., Li B., Li B., Li B., Nosé S., Patton K. R., Pokrovsky V. L., Saira O.-P., Segal D., Terraneo M., Wang L., Wu G., Yang N., Zhang G.   +22 more
core   +1 more source

Composites of Shellac and Silver Nanowires as Flexible, Biobased, and Corrosion‐Resistant Transparent Conductive Electrodes

Advanced Functional Materials, EarlyView.
Shellac, a centuries‐old natural resin, is reimagined as a green material for flexible electronics. When combined with silver nanowires, shellac films deliver transparency, conductivity, and stability against humidity. These results position shellac as a sustainable alternative to synthetic polymers for transparent conductors in next‐generation ...
Rahaf Nafez Hussein, Tiago Carneiro Gomes, Eliza Ng, Simon Rondeau‐Gagné, Tricia Breen Carmichael   +4 more
wiley   +1 more source

SPICE Model for SiC Bipolar Transistor and TTL Inverter Degradation Due to Gamma Radiation

Micromachines
Silicon carbide (SiC) is a key material for electronics operating in harsh environments due to its wide bandgap, high thermal conductivity, and radiation hardness.
Alex Metreveli, Anders Hallén, Carl-Mikael Zetterling   +2 more
doaj   +1 more source

Spin-Flip Transistor

, 2001
The recently developed semiclassical theory for magnetoelectronic circuits is applied to a transistor-like device consisting of a normal metal island and three magnetic terminals.
Arne Brataas, Brataas, Datta, Gerrit E.W. Bauer, Johnson, Nazarov, Nazarov, Waintal, Yuli V. Nazarov   +8 more
core   +1 more source

2D materials readiness for the transistor performance breakthrough

, 2023
Qing Zhang, Chunsen Liu, Peng Zhou
openalex   +1 more source

Molecularly Tailored Elastomeric Block‐Copolymers for Intrinsically Stretchable Organic Field‐Effect Transistors

Advanced Functional Materials, EarlyView.
Molecular‐level engineering of SEBS elastomers is introduced for skin‐inspired electronics. By systematically modulating the S/EB molar ratio in SEBS, precise control is achieved over nanoscale morphology, mechanical properties, metal‐elastomer adhesion, and dielectric performance.
Min Woo Jeong, Seon Hoo Park, Min Hyouk Kim, Jun Su Kim, Tae Uk Nam, Ngoc Thanh Phuong Vo, Kyu Ho Jung, Hye Rin Chang, Thuy An Nguyen, Jin Young Oh   +9 more
wiley   +1 more source