Results 81 to 90 of about 335,727 (374)

Tin‐Based 2D/3D Perovskite Vertical Heterojunction for High‐Performance Synaptic Phototransistors

open access: yesAdvanced Functional Materials, EarlyView.
Phototransistors based on tin‐based 2D/3D perovskite heterostructures show an ultrahigh responsivity and detectivity at a low gate voltage across a broad wavelength region from ultraviolet to near‐infrared. The devices can replicate neuromorphic learning and remembering behaviors to light stimuli, in addition to electric depression and memory erasure ...
Hok‐Leung Loi   +10 more
wiley   +1 more source

Single-atom Transistors for classical computing [PDF]

open access: yesarXiv, 2017
In this review, we present an overview of four proof-of-concept of single-atom transistors based on four technologies : Atom doping, Single electron transistors, Single-atom metallic wire and Multilevel atomic-scale switching. Techniques and methods to build these transistors are described as such as the theory behind their mechanisms.
arxiv  

Improved circuit avoids premature power transistor failure [PDF]

open access: yes, 1971
Reactor inserted in the base-drive circuit of each power transistor delays the turn-on of one transistor until the other has turned ...
Mclyman, W. T.
core   +1 more source

Multiple facets of tightly coupled transducer-transistor structures [PDF]

open access: yes, 2015
The ever increasing demand for data processing requires different paradigms for electronics. Excellent performance capabilities such as low power and high speed in electronics can be attained through several factors including using functional materials ...
Dahiya, Ravinder, Heidari, Hadi
core   +1 more source

Tunable Tactile Synapses Enabled by Erasable Doping in Iongel‐Gated Nanotube Network Transistors

open access: yesAdvanced Functional Materials, EarlyView.
Artificial tactile synaptic sensors are realized by an iongel‐gated single‐walled carbon nanotube (SWCNT) transistor with reversible doping characteristics. The device senses and memorizes tactile stimuli and exhibits gate bias‐dependent excitatory or inhibitory synaptic behavior.
Yan Huang   +5 more
wiley   +1 more source

Polyimide Dielectric Layer on Filaments for Organic Field Effect Transistors: Choice of Solvent, Solution Composition and Dip-Coating Speed

open access: yesAUTEX Research Journal, 2014
In today’s research, smart textiles is an established topic in both electronics and the textile fields. The concept of producing microelectronics directly on a textile substrate is not a mere idea anymore and several research institutes are working on ...
Rambausek Lina   +3 more
doaj   +1 more source

Gated Conductance of Thin Indium Tin Oxide - The Simplest Transistor [PDF]

open access: yesarXiv, 2012
Transistors are the fundamental building block of modern electronic devices. So far, all transistors are based on various types of semiconductor junctions. The most common bipolar-junction transistors and metal-oxide-semiconductor field-effect transistors contain p-n junctions to control the current, depending on applied biases across the junctions ...
arxiv  

Spin Hall effect transistor

open access: yes, 2010
Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies.
A. C. Irvine   +21 more
core   +1 more source

A Transistorized Directional Coupler [PDF]

open access: yesIEEE Transactions on Circuit Theory, 1968
In previous papers an active directional coupler using a triode, [1],[2] and its use in a bidirectional broad-band amplifier, [3] has been described. It is obvious that it is important to investigate how such a device can be realized using semiconductor techniques.
Denoth F., Pellegrini B.
openaire   +4 more sources

Exploring Electronic States and Ultrafast Electron Dynamics in AlInP Window Layers: The Role of Surface Reconstruction

open access: yesAdvanced Functional Materials, EarlyView.
This study examines the surface characteristics of AlInP (001), crucial for advanced solar cells and photoelectrochemical devices. Using theoretical modeling and experiments, it identifies how phosphorus‐rich and indium‐rich surfaces create mid‐gap states that pin the Fermi level and influence ultrafast electron dynamics.
Mohammad Amin Zare Pour   +11 more
wiley   +1 more source

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