Results 81 to 90 of about 369,729 (357)
A tunable, dual mode field-effect or single electron transistor
, 2012 A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology.
B. Previtali +9 more
core +1 more source
Trends and challenges in VLSI technology scaling towards 100 nm [PDF]
, 2002 Summary form only given. Moore's Law drives VLSI technology to continuous increases in transistor densities and higher clock frequencies. This tutorial will review the trends in VLSI technology scaling in the last few years and discuss the challenges ...
Nauta, B. +3 more
core +3 more sources
Ternary Transistors With Reconfigurable Polarities
Advanced Functional Materials, EarlyView.Polarity‐reconfigurable ternary transistors are demonstrated using black phosphorus homojunction with asymmetric contacts and split‐gate structures. Suppression of majority carrier injection, while Fowler–Nordheim tunneling of low‐density minority carriers persists, enables a well‐defined intermediate state with improved on/off ratios.
Dongju Yeom +11 more
wiley +1 more source
NanomaterialsUsing novel SiO2 surface passivation and ultraviolet (UV) light anneal, a 12 nm thick SnO p-type FET (pFET) shows hole effective mobilities (µeff) of more than 100 cm2/V·s and 31.1 cm2/V·s at hole densities (Qh) of 1 × 1011 and 5 × 1012 cm−2 ...
Kuan-Chieh Chen +3 more
doaj +1 more source
Multiple Functionality in Nanotube Transistors
, 2002 Calculations of quantum transport in a carbon nanotube transistor show that such a device offers unique functionality. It can operate as a ballistic field-effect transistor, with excellent characteristics even when scaled to 10 nm dimensions.
A. Odintsov +21 more
core +1 more source
Negative differential thermal resistance and thermal transistor [PDF]
, 2006 We report on the first model of a thermal transistor to control heat flow. Like its electronic counterpart, our thermal transistor is a three-terminal device with the important feature that the current through the two terminals can be controlled by small
Baowen Li +3 more
core +2 more sources
Advanced Functional Materials, EarlyView.A two‐step DNA metallization process is presented for the modular assembly of metal sulfide nanoparticles (NPs) on MoS2, with nanoscale control over their separation and ability to concomitantly assemble different kind of NPs. This allowed to tailor the photoinduced electrical response of phototransistors to different wavelengths, according to the ...
Kai Chen +3 more
wiley +1 more source
BSIM-CMG compact model for IC CAD: from FinFET to Gate-All-Around FET Technology
Journal of Microelectronic Manufacturing, 2020 We discuss the BSIM-CMG compact model for SPICE simulations of any common multi-gate (CMG) device. This is an industry standard model which has been used extensively for FinFETs IC design and simulation, and has now been extended to accurately model gate-
Avirup Dasgupta, Chenming Hu
doaj +1 more source
Transistor circuit increases range of logarithmic current amplifier [PDF]
, 1966 Circuit increases the range of a logarithmic current amplifier by combining a commercially available amplifier with a silicon epitaxial transistor.
Gilmour, G.
core +1 more source
Optical Control of Ferroelectric Imprint in BiFeO3
Advanced Functional Materials, EarlyView.Above‐bandgap irradiation at room temperature enables on‐demand optical control of defect‐driven built‐in electric fields in BiFeO₃ thin films, fabricated via scalable, chemical spray pyrolysis. These fields, otherwise “frozen‐in,” can cause severe device degradation, including non‐switchable polarization, dead layers near interfaces, and polarization ...
Haoze Zhang +8 more
wiley +1 more source