Results 61 to 70 of about 19,112 (260)
Though literature reports improvements in organic electronic device performance, understanding the correlation between static and dynamic device responses remains a challenge.
Taiki Sawada +6 more
doaj +1 more source
Intermixing‐Driven Growth of Highly Oriented Indium Phosphide on Black Phosphorus
This study demonstrates controlled intermixing and compound formation at the In/black phosphorus (BP) interface, leading to highly oriented InP formation. Comprehensive structural and electrical analyses reveal tunable bandgap behavior governed by competing BP thinning and charge‐transfer effects, underscoring the critical role of interfacial compound ...
Tae Keun Yun +6 more
wiley +1 more source
High-frequency characteristics of ultra-short gate MoS2 transistors
Short channel transistors are gaining attention for high-frequency applications. MoS _2 transistors, with their atomically thin structure, exhibit excellent on/off switching and low intrinsic capacitance.
Akiko Ueda +2 more
doaj +1 more source
Charge Transport in Ternary Charge‐Transfer Solid Solution Single Crystals
This study deconvolutes the roles of indirect (superexchange) and direct electronic coupling on charge transport in single crystals of an organic charge‐transfer molecular semiconductor (OSC). This model system elegantly demonstrates that structural defects introduced by chemical dopants play a significant role in the electronic performance ...
Jonathan C. Novak +7 more
wiley +1 more source
A Graphene-Based Hot Electron Transistor
We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the
Sam Vaziri +8 more
openaire +3 more sources
Anion‐excessive gel‐based organic synaptic transistors (AEG‐OSTs) that can maintain electrical neutrality are developed to enhance synaptic plasticity and multistate retention. Key improvement is attributed to the maintenance of electrical neutrality in the electrolyte even after electrochemical doping, which reduces the Coulombic force acting on ...
Yousang Won +3 more
wiley +1 more source
Hydrogen bonding-driven Ohmic contact in Sc2CT2 (T=H, F, OH) based field-effect transistors [PDF]
With the continuous miniaturization of transistors, atomically thin two-dimensional (2D) semiconductor materials have shown significant promise for developing advanced electronic devices.
Jiaxiang Li +8 more
doaj +1 more source
Surface Diffusion in SnTe‐PbTe Monolayer Lateral Heterostructures
The lateral heterostructures between 2D materials often suffer from the interdiffusion at the interfaces. Here, a surface diffusion mechanism is found to be dominating at the interfaces between semiconducting SnTe and PbTe monolayers. Atomically sharp interfaces can be achieved by suppressing this diffusion process. ABSTRACT The construction of complex
Jing‐Rong Ji +9 more
wiley +1 more source
One SYK single electron transistor
We study the behaviour of a single electron transistor (SET) represented by a dissipative tunnel junction between a pair of quantum dots described by two (possibly, different) Sachdev–Ye–Kitaev (SYK) models. A combined influence of the soft collective charge and energy modes on charge transport is discussed, alongside the competing effects of the ...
openaire +2 more sources

