Results 131 to 140 of about 11,441 (198)
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Debug and prediction of EOS events using long duration Transmission Line Pulse (TLP) measurements
2015 37th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2015This case study demonstrates how long-duration Transmission Line Pulse (TLP) measurements can be used to debug, replicate and even predict EOS events. Knowing the EOS waveform characteristics allows easier determination of the root cause of the electrical overstress. This is critical in preventing future such occurrences.
Dave Clarke, Stephen Heffernan
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2004 IEEE International Reliability Physics Symposium. Proceedings, 2004
The Cu metal interconnect under TLP stress can not be treated as the constant current stress. The increase in the metal interconnect length at GGNMOS drain can improve device's MM failure threshold but degrade device's HBM failure threshold and IT2.
J.H. Lee +7 more
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The Cu metal interconnect under TLP stress can not be treated as the constant current stress. The increase in the metal interconnect length at GGNMOS drain can improve device's MM failure threshold but degrade device's HBM failure threshold and IT2.
J.H. Lee +7 more
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Microelectronics Reliability, 2003
Abstract Electrostatic discharge events can degrade the electromigration (EM) reliability of devices. Transmission line pulsing stress analysis is used to evaluate electrostatic discharge robustness of copper (Cu) interconnects and the impact to EM performance.
Sherry Suat Cheng Khoo +2 more
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Abstract Electrostatic discharge events can degrade the electromigration (EM) reliability of devices. Transmission line pulsing stress analysis is used to evaluate electrostatic discharge robustness of copper (Cu) interconnects and the impact to EM performance.
Sherry Suat Cheng Khoo +2 more
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2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320), 2003
Electrostatic discharge robustness of an epitaxial-base pseudomorphic Silicon Germanium Heterojunction Bipolar Transistor (HBT) device with Carbon incorporation is shown for the first time. Experimental results show that incorporation of Carbon in the base of a SiGe HBT device improves power-to-failure variation by improved control of the base width ...
B. Ronan +5 more
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Electrostatic discharge robustness of an epitaxial-base pseudomorphic Silicon Germanium Heterojunction Bipolar Transistor (HBT) device with Carbon incorporation is shown for the first time. Experimental results show that incorporation of Carbon in the base of a SiGe HBT device improves power-to-failure variation by improved control of the base width ...
B. Ronan +5 more
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Journal of Electrostatics, 2002
Abstract For a deeper understanding of protection structures during ESD events, transmission line pulse events are applied and simulated with a two-dimensional (2D) device simulator on the particular case of a 1.2 μm low voltage triggering silicon controlled rectifier.
Guilhaume, A. +5 more
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Abstract For a deeper understanding of protection structures during ESD events, transmission line pulse events are applied and simulated with a two-dimensional (2D) device simulator on the particular case of a 1.2 μm low voltage triggering silicon controlled rectifier.
Guilhaume, A. +5 more
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2023 45th Annual EOS/ESD Symposium (EOS/ESD), 2023
A novel Transmission Line Pulsing (TLP)-based technique, the "sensor gap TLP" (sg-TLP) is introduced. Instead of using dedicated current and/or voltage sensors like established methods, sg-TLP utilizes two voltage sensors, which are deliberately ...
Dennis Helmut, Gerhard Groos
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A novel Transmission Line Pulsing (TLP)-based technique, the "sensor gap TLP" (sg-TLP) is introduced. Instead of using dedicated current and/or voltage sensors like established methods, sg-TLP utilizes two voltage sensors, which are deliberately ...
Dennis Helmut, Gerhard Groos
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Fine Modeling of Transmission Line Pulse (TLP) and Exploitation for Measurement Set-Up Optimization
9th International Symposium on EMC Joint with 20th International Wroclaw Symposium on EMC, EMC Europe 2010, 2010This paper proposes techniques to model Transmission Line Pulse generator (TLP) in order to able accurate extraction of electrical characteristics of Integrated Circuits (ICs) for behavioral modeling. Exploitation of this model allows the optimization of
Lafon, F. +5 more
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IEEE Journal of Emerging and Selected Topics in Power Electronics, 2022
The electrostatic discharge robustness of silicon carbide (SiC) power metal–oxide–semiconductor field-effect transistors (MOSFETs) are investigated by the transmission line pulse (TLP) method.
X. B. Xu +11 more
semanticscholar +1 more source
The electrostatic discharge robustness of silicon carbide (SiC) power metal–oxide–semiconductor field-effect transistors (MOSFETs) are investigated by the transmission line pulse (TLP) method.
X. B. Xu +11 more
semanticscholar +1 more source
CPMT Symposium Japan, 2021
In a conventional TLP system, the pulse disturbance is applied to the DUT via the transmission line, whose characteristic impedance is $50\ \Omega$.
Kyousuke Tanaka +2 more
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In a conventional TLP system, the pulse disturbance is applied to the DUT via the transmission line, whose characteristic impedance is $50\ \Omega$.
Kyousuke Tanaka +2 more
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IEEE International Reliability Physics Symposium, 2021
Using TLP (Transmission Line Pulse) and VF-TLP (Very Fast Transmission Line Pulse) to emulate a fast transient stress, a study of oxide reliability during a CDM (Charged Devise Model) event was done to establish an empirical law between the time to ...
Chloe Troussier +4 more
semanticscholar +1 more source
Using TLP (Transmission Line Pulse) and VF-TLP (Very Fast Transmission Line Pulse) to emulate a fast transient stress, a study of oxide reliability during a CDM (Charged Devise Model) event was done to establish an empirical law between the time to ...
Chloe Troussier +4 more
semanticscholar +1 more source